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CI10S65
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Tokmas Schottky Barrier Diodes (SBD), TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CI10S65
Tokmas · Schottky Barrier Diodes (SBD) · TO-220-2
CI10S65 from Tokmas, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PIN 1 | passive | Terminal 1 of the TO-220-2 package for the 650 V SiC Schottky barrier diode CI10S65; the datasheet does not name it as anode or cathode, and the diode ratings are VRRM 650 V and IF 10 A/12 A at TC. |
| 2 | PIN 2 | passive | Terminal 2 of the TO-220-2 package for the 650 V SiC Schottky barrier diode CI10S65; the datasheet does not name it as anode or cathode, and the diode ratings are VRRM 650 V and IF 10 A/12 A at TC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-220-2 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse repetitive peak voltage | VRRM | 650 | V | 1 | |||
| Reverse surge peak voltage | VRSM | 650 | V | 1 | |||
| DC blocking voltage | VDC | 650 | V | 1 | |||
| Continuous forward current | IF | 12 | A | TC | 1 | ||
| Continuous forward current | IF | 10 | A | TC | 1 | ||
| Repetitive peak forward surge current | IFRM | 67 | A | TC=25˚C, tP=10 mS, half sine wave, D=0.3 | 1 | ||
| Repetitive peak forward surge current | IFRM | 44 | A | TC=110˚C, tP=10 mS, half sine wave, D=0.3 | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 90 | A | TC=25˚C, tP=10 mS, half sine wave, D=0.3 | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 71 | A | TC=110˚C, tP=10 mS, half sine wave, D=0.3 | 1 | ||
| Non-repetitive peak forward surge current (pulse) | IFSM | 250 | A | TC=25˚C, tP=10 µs, pulse | 1 | ||
| Power dissipation | Ptot | 136.3 | W | TC=25˚C | 1 | ||
| Power dissipation | Ptot | 59 | W | TC=110˚C | 1 | ||
| Operating junction and storage temperature | TJ, Tstg | -55 | 175 | ˚C | 1 | ||
| Forward voltage | VF | 1.4 | 1.7 | V | IF = 10 A, TJ=25°C | 2 | |
| Forward voltage | VF | 1.6 | 1.9 | V | IF = 10 A, TJ=175°C | 2 | |
| Reverse current | IR | 10 | 20 | μA | VR = 600 V, TJ=25°C | 2 | |
| Reverse current | IR | 50 | 200 | μA | VR = 600 V, TJ=175°C | 2 | |
| Thermal resistance, junction to case | RθJC | 1.1 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
CI10S65 - Footprint:
Package_TO_SOT_THT:TO-220-2_Vertical - 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files:
ci10s65-etched.step/ci10s65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ci10s65.step/ci10s65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
21bf2f6c154fa347, retrieved 2026-11-11, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CI10S65
**Tokmas** · Schottky Barrier Diodes (SBD) · TO-220-2
CI10S65 from Tokmas, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PIN 1 | passive | Terminal 1 of the TO-220-2 package for the 650 V SiC Schottky barrier diode CI10S65; the datasheet does not name it as anode or cathode, and the diode ratings are VRRM 650 V and IF 10 A/12 A at TC. |
| 2 | PIN 2 | passive | Terminal 2 of the TO-220-2 package for the 650 V SiC Schottky barrier diode CI10S65; the datasheet does not name it as anode or cathode, and the diode ratings are VRRM 650 V and IF 10 A/12 A at TC. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-220-2 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse repetitive peak voltage | VRRM | | | 650 | V | | 1 |
| Reverse surge peak voltage | VRSM | | | 650 | V | | 1 |
| DC blocking voltage | VDC | | | 650 | V | | 1 |
| Continuous forward current | IF | | | 12 | A | TC | 1 |
| Continuous forward current | IF | | | 10 | A | TC | 1 |
| Repetitive peak forward surge current | IFRM | | | 67 | A | TC=25˚C, tP=10 mS, half sine wave, D=0.3 | 1 |
| Repetitive peak forward surge current | IFRM | | | 44 | A | TC=110˚C, tP=10 mS, half sine wave, D=0.3 | 1 |
| Non-repetitive peak forward surge current | IFSM | | | 90 | A | TC=25˚C, tP=10 mS, half sine wave, D=0.3 | 1 |
| Non-repetitive peak forward surge current | IFSM | | | 71 | A | TC=110˚C, tP=10 mS, half sine wave, D=0.3 | 1 |
| Non-repetitive peak forward surge current (pulse) | IFSM | | | 250 | A | TC=25˚C, tP=10 µs, pulse | 1 |
| Power dissipation | Ptot | | | 136.3 | W | TC=25˚C | 1 |
| Power dissipation | Ptot | | | 59 | W | TC=110˚C | 1 |
| Operating junction and storage temperature | TJ, Tstg | -55 | | 175 | ˚C | | 1 |
| Forward voltage | VF | | 1.4 | 1.7 | V | IF = 10 A, TJ=25°C | 2 |
| Forward voltage | VF | | 1.6 | 1.9 | V | IF = 10 A, TJ=175°C | 2 |
| Reverse current | IR | | 10 | 20 | μA | VR = 600 V, TJ=25°C | 2 |
| Reverse current | IR | | 50 | 200 | μA | VR = 600 V, TJ=175°C | 2 |
| Thermal resistance, junction to case | RθJC | | 1.1 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `CI10S65`
- Footprint: `Package_TO_SOT_THT:TO-220-2_Vertical`
- 3D model: TO-220-2 (KiCad packages3D, STEP)
- 3D model files: `ci10s65-etched.step` / `ci10s65-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ci10s65.step` / `ci10s65.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tokmas datasheet](docs/ci10s65-datasheet.pdf) (5 pp, sha256 `21bf2f6c154fa347`, retrieved 2026-11-11, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ci10s65-datasheet.pdf)