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Contents

README

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CEU6086-VB

VBsemi Elec · MOSFETs · TO-252

CEU6086-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated ±20 V (VGS), with gate-source leakage IGSS of ±100 nA maximum at ±20 V.
2 D passive Drain is rated 60 V VDS with continuous drain current ID of 97 A at TC = 25 °C, and junction-to-case thermal resistance RthJC of 1.1 °C/W.
3 S passive Source carries continuous source (diode conduction) current IS of 100 A and pulsed drain current IDM of 290 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 97 A TC = 25 °C 1
Continuous Drain Current ID 56 A TC = 125 °C 1
Continuous Source Current (Diode Conduction) IS 100 A 1
Pulsed Drain Current IDM 290 A 1
Single Pulse Avalanche Current IAS 45 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 101 mJ 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 45 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 50 °C/W PCB Mount 1
Junction-to-Case Thermal Resistance (Drain) RthJC 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 60 V 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 60 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 60 V, TJ = 175 °C 2
On-State Drain Current ID(on) 50 A VGS = 10 V, VDS 5 V 2
Output Capacitance Coss 441 555 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 200 250 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate Resistance Rg 1 2 3 Ω f = 1 MHz 2
Turn-Off Delay Time td(off) 41 62 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 1 2
Fall Time tf 7 11 ns VDD = 30 V, RL = 0.6, ID 50 A, VGEN = 10 V, Rg = 1 2
Pulsed Current ISM 290 A 2
Forward Voltage VSD 0.9 1.5 V IF = 50 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: CEU6086-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ceu6086-vb-etched.step / ceu6086-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ceu6086-vb.step / ceu6086-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 6e23461b0b94331d, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF