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Contents

README

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CEU12N10

CET(Chino-Excel Tech) · MOSFETs · TO-252-2(DPAK)

CEU12N10 from CET(Chino-Excel Tech), in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20V, with threshold voltage VGS(th) of 2 to 4V at ID = 250µA.
2 D passive Drain (mounting tab); drain-source voltage rated 100V with 11A continuous drain current.
3 S passive Source; body-diode forward current up to 11A, junction-to-case thermal resistance 3.5 °C/W.

Key specifications

Parameter Value
Manufacturer CET(Chino-Excel Tech)
Package TO-252-2(DPAK)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100, VGS = 0V 2
Gate Body Leakage Current, Forward IGSSF 100 nA VGS = 20V, VDS = 0V 2
Gate Body Leakage Current, Reverse IGSSR -100 nA VGS = -20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 2 4 V VGS = VDS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(on) 150 180 mΩ VGS = 10V, ID = 6A 2
Turn-On Delay Time td(on) 12 24 ns VDD = 80, ID = 11A, VGS = 10V, RGEN = 9.1Ω 2
Turn-On Rise Time tr 7 14 ns VDD = 80, ID = 11A, VGS = 10V, RGEN = 9.1Ω 2
Turn-Off Delay Time td(off) 18 35 ns VDD = 80, ID = 11A, VGS = 10V, RGEN = 9.1Ω 2
Turn-Off Fall Time tf 3 6 ns VDD = 80, ID = 11A, VGS = 10V, RGEN = 9.1Ω 2
Total Gate Charge Qg 8 16 nC VDS = 80V, ID = 11A, VGS = 10V 2
Drain-Source Diode Forward Current IS 11 A 2
Drain-Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 11A 2
Drain-Source Voltage VDS 100 V Tc = 25 C 1
Gate-Source Voltage VGS -20 20 V Tc = 25 C 1
Drain Current-Continuous ID 11 A Tc = 25 C 1
Drain Current-Pulsed IDM 44 A Tc = 25 C 1
Maximum Power Dissipation PD 43 W @ TC = 25 C 1
Power Dissipation Derate above 25 C 0.29 W/C Derate above 25 C 1
Operating and Store Temperature Range TJ,Tstg -55 175 C 1
Thermal Resistance, Junction-to-Case RθJC 3.5 C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 50 C/W 1
Forward Transconductance gFS 5 S VDS = 10V, ID = 6A 2
Input Capacitance Ciss 430 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Output Capacitance Coss 90 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 20 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Gate-Source Charge Qgs 1.5 nC VDS = 80V, ID = 11A, VGS = 10V 2
Gate-Drain Charge Qgd 2 nC VDS = 80V, ID = 11A, VGS = 10V 2

CAD (KiCad official)

  • Symbol: CEU12N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: ceu12n10-etched.step / ceu12n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ceu12n10.step / ceu12n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CET(Chino-Excel Tech) datasheet (4 pp, sha256 86d5b4599de610a6, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF