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CES2301-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsces2301-vbfactory-2.0.0extractor-text

Verified CES2301-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CES2301-VB · SOT-23(TO-236) · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-p87ae3ye/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ces2301-vb.kicad_sym✓ ces2301-vb.kicad_mod✓ ces2301-vb.step
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Ray Publish 0.1.0 4c37f1f

CES2301-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

CES2301-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate terminal; the absolute maximum gate-source voltage VGS is ±12 V.
2 S passive Source terminal; the continuous source-drain diode current IS is -2.1 A at TC = 25 °C (-1.0 A at TA = 25 °C, per the thermal-rating footnote b/c).
3 D passive Drain terminal; the drain-source voltage VDS is -20 V and the continuous drain current ID is -4 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C, unless otherwise noted 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C, unless otherwise noted 1
Continuous Drain Current ID -4 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -3.2 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -3.5 A Tb,A = 25 °C, t = 5 s (note c) 1
Continuous Drain Current ID -2.5 A Tb,A = 70 °C, t = 5 s (note c) 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A Tb,A = 25 °C, t = 5 s (note c) 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb,A = 25 °C, t = 5 s (note c) 1
Maximum Power Dissipation PD 0.8 W Tb,A = 70 °C, t = 5 s (note c) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t = 5 s, surface mounted on 1 in x 1 in FR4 board (notes b, c, d) 1
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain), steady state RthJF 40 50 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VDS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.5 -0.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -10 A VDS = -5 V, VGS = -4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = -4.5 V, ID = -2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = -2.5 V, ID = -2 A 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -10 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = -3.1 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 22 33 ns VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 2
Rise Time tr 20 30 ns VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 2
Turn-Off Delay Time td(off) 28 42 ns VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 2
Fall Time tf 9 18 ns VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 2
Gate Resistance Rg 0.9 4.4 8.8 f = 1 MHz 2
Drain-Source Breakdown Voltage Temperature Coefficient VDS/TJ 13.4 mV/°C ID = -250 µA 2
Gate-Source Threshold Voltage Temperature Coefficient VGS(th)/TJ 2.9 2
Forward Transconductance gfs 15 S VDS = -5 V, ID = -3 A 2
Input Capacitance Ciss 835 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 180 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 155 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 10 nC VDS = -10 V, VGS = -4.5 V, ID = -3.1 A 2
Total Gate Charge Qg 6.4 nC VDS = -10 V, VGS = -2.5 V, ID = -3.1 A 2
Gate-Source Charge Qgs 1.7 nC 2
Gate-Drain Charge Qgd 3.4 nC 2
Reverse Recovery Fall Time ta 15 ns 2
Reverse Recovery Rise Time tb 8 ns 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: CES2301-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: ces2301-vb-etched.step / ces2301-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ces2301-vb.step / ces2301-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 d5687dcee86dfcc0, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF