CEP02N6G-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±30 V with threshold of 2.0 to 4.0 V at 250 µA.
2	D	passive	Drain (connected to the tab); drain-source voltage rated 650 V with RDS(on) of 4 Ω at VGS = 10 V.
3	S	passive	Source; body diode continuous source-drain current is 2 A and pulsed 8 A.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-220AB
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	VDS	650			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ± 30 V	2
Zero Gate Voltage Drain Current	IDSS			25	µA	VDS = 650 V, VGS = 0 V	2
Zero Gate Voltage Drain Current (125 °C)	IDSS			250	µA	VDS = 520 V, VGS = 0 V, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)			4	Ω	VGS = 10 V, ID = 1 A	2
Forward Transconductance	gfs	3.9			S	VDS = 50 V, ID = 1 A	2
Continuous Source-Drain Diode Current	IS			2	A		2
Pulsed Diode Forward Current	ISM			8	A		2
Body Diode Voltage	VSD			1.5	V	TJ = 25 °C, IS = 3.2 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr		180	230	ns	TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs	2
Body Diode Reverse Recovery Charge	Qrr		2.1	3.2	µC	TJ = 25 °C, IF = 3.2 A, dI/dt = 100 A/µs	2
VDS Temperature Coefficient	ΔVDS/TJ		670		mV/°C	Reference to 25 °C, ID = 1 mA	2
Input Capacitance	Ciss		417		pF	VGS = 0 V, VDS = 25 V, f = 1.0 MHz	2
Output Capacitance	Coss		45		pF	VGS = 0 V, VDS = 25 V, f = 1.0 MHz	2
Turn-Off Delay Time	td(off)		34		ns	VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω	2
Fall Time	tf		18		ns	VDD = 325 V, ID = 1.2 A, RG = 9.1 Ω, RD = 62 Ω	2
Drain-Source Voltage	VDS			650	V	TC = 25 °C	1
Gate-Source Voltage	VGS	-30		30	V	TC = 25 °C	1
Continuous Drain Current	ID			1.28	A	VGS at 10 V, TC = 100 °C	1
Pulsed Drain Current	IDM			8	A	TC = 25 °C	1
Linear Derating Factor				0.48	W/°C		1
Single Pulse Avalanche Energy	EAS			165	mJ	Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A	1
Repetitive Avalanche Current	IAR			2	A		1
Repetitive Avalanche Energy	EAR			6	mJ		1
Maximum Power Dissipation	PD			45	W	TC = 25 °C	1
Peak Diode Recovery dV/dt	dV/dt			2.8	V/ns	ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Soldering Peak Temperature				300	°C	for 10 s, 1.6 mm from case	1
Junction-to-Ambient Thermal Resistance	RthJA			65	°C/W		2
Junction-to-Case (Drain) Thermal Resistance	RthJC			2.1	°C/W		2

CAD (KiCad official)

Symbol: CEP02N6G-VB
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: cep02n6g-vb-etched.step / cep02n6g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cep02n6g-vb.step / cep02n6g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 bd510bd07cefe975, retrieved 2026-11-12, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

CEP02N6G-VB

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3D Model

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