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CEM6088-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CEM6088-VB

VBsemi Elec · MOSFETs · SO-8

CEM6088-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (VDS 60 V max, ID 10 A package limited at TC = 25 °C).
2 G1 passive Gate of N-channel MOSFET 1 (VGS ±20 V max, threshold 1.0 to 2.5 V).
3 S2 passive Source of N-channel MOSFET 2 (VDS 60 V max, ID 10 A package limited at TC = 25 °C).
4 G2 passive Gate of N-channel MOSFET 2 (VGS ±20 V max, threshold 1.0 to 2.5 V).
5 D2 passive Drain of N-channel MOSFET 2, tied with pin 6 (RDS(on) 0.012 Ω at VGS = 10 V).
6 D2 passive Drain of N-channel MOSFET 2, tied with pin 5 (RDS(on) 0.015 Ω at VGS = 4.5 V).
7 D1 passive Drain of N-channel MOSFET 1, tied with pin 8 (RDS(on) 0.012 Ω at VGS = 10 V).
8 D1 passive Drain of N-channel MOSFET 1, tied with pin 7 (RDS(on) 0.015 Ω at VGS = 4.5 V).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM 40 A TA = 25 °C 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 55 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 2.25 A TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 58 70 °C/W t ≤ 10 s; steady state max is 110 °C/W 1
Maximum Junction-to-Foot (Drain) RthJF 38 45 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
VDS Temperature Coefficient ΔVDS/TJ 32 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 10 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.012 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = 4.5 V, ID = 4 A 2
Forward Transconductance gfs 16 S VDS = 10 V, ID = 5 A 2
Gate Resistance Rg 0.8 4.3 8.6 Ω f = 1 MHz 2
Input Capacitance Ciss 586 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 217 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 155 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2 A, VGS = 0 V 2
Pulse Diode Forward Current ISM 24 A 2
Body Diode Reverse Recovery Time trr 11 20 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: CEM6088-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: cem6088-vb-etched.step / cem6088-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cem6088-vb.step / cem6088-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 d8ee7bbcf959e2e9, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF