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CED12N10-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CED12N10-VB
VBsemi Elec · MOSFETs · TO-251
CED12N10-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-Source Voltage VGS is rated ±20 V, and the device is specified at VGS = 10 V for RDS(on) of 0.110 Ω at ID = 15 A. |
| 2 | D | passive | Drain-Source Voltage VDS is rated 100 V, with continuous drain current ID of 15 A at TC = 25 °C. |
| 3 | S | passive | Continuous Source Current (Diode Conduction) IS is rated 15 A, and Pulsed Drain Current IDM is rated 45 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 15 | A | TC = 25 °C (TJ = 175 °C) | 1 | ||
| Continuous Drain Current | ID | 8.7 | A | TC = 125 °C | 1 | ||
| Pulsed Drain Current | IDM | 45 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 15 | A | 1 | |||
| Avalanche Current | IAR | 15 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 11.3 | mJ | L = 0.1 mH; duty cycle 1 % | 1 | ||
| Maximum Power Dissipation | PD | 61 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 16 | 20 | °C/W | 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance | RthJA | 45 | 55 | °C/W | Steady state | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 22.4 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 15 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.17 | Ω | VGS = 10 V, ID = 15 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.23 | Ω | VGS = 10 V, ID = 15 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.115 | Ω | VGS = 6 V, ID = 10 A | 2 | ||
| Forward Transconductance | gfs | 25 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Input Capacitance | Ciss | 892 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 110 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 70 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 20 | 25 | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 | |
| Gate-Source Charge | Qgs | 5.5 | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 | ||
| Gate-Drain Charge | Qgd | 7 | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 | ||
| Gate Resistance | Rg | 13.2 | Ω | 2 | |||
| Turn-On Delay Time | td(on) | 81 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 | ||
| Rise Time | tr | 35 | 55 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 17 | 25 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Fall Time | tf | 30 | 45 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 45 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 15 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 55 | 85 | ns | IF = 15 A, dI/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
CED12N10-VB - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
ced12n10-vb-etched.step/ced12n10-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ced12n10-vb.step/ced12n10-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (6 pp, sha256
4e7c46f8f1f427da, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CED12N10-VB
**VBsemi Elec** · MOSFETs · TO-251
CED12N10-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-Source Voltage VGS is rated ±20 V, and the device is specified at VGS = 10 V for RDS(on) of 0.110 Ω at ID = 15 A. |
| 2 | D | passive | Drain-Source Voltage VDS is rated 100 V, with continuous drain current ID of 15 A at TC = 25 °C. |
| 3 | S | passive | Continuous Source Current (Diode Conduction) IS is rated 15 A, and Pulsed Drain Current IDM is rated 45 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 15 | A | TC = 25 °C (TJ = 175 °C) | 1 |
| Continuous Drain Current | ID | | | 8.7 | A | TC = 125 °C | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 15 | A | | 1 |
| Avalanche Current | IAR | | | 15 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 11.3 | mJ | L = 0.1 mH; duty cycle 1 % | 1 |
| Maximum Power Dissipation | PD | | | 61 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 2.7 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 16 | 20 | °C/W | 10 s | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 45 | 55 | °C/W | Steady state | 1 |
| Junction-to-Case Thermal Resistance | RthJC | | 22.4 | | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 100 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 100 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 15 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.17 | Ω | VGS = 10 V, ID = 15 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.23 | Ω | VGS = 10 V, ID = 15 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.115 | Ω | VGS = 6 V, ID = 10 A | 2 |
| Forward Transconductance | gfs | | 25 | | S | VDS = 15 V, ID = 15 A | 2 |
| Input Capacitance | Ciss | | 892 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 110 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 70 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 20 | 25 | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 |
| Gate-Source Charge | Qgs | | 5.5 | | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 |
| Gate-Drain Charge | Qgd | | 7 | | nC | VDS = 75 V, VGS = 10 V, ID = 15 A | 2 |
| Gate Resistance | Rg | | 13.2 | | Ω | | 2 |
| Turn-On Delay Time | td(on) | | 81 | | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Rise Time | tr | | 35 | 55 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 17 | 25 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Fall Time | tf | | 30 | 45 | ns | VDD = 75 V, RL = 5 Ω, ID ≈ 15 A, VGEN = 10 V, RG = 2.5 Ω | 2 |
| Pulsed Current | ISM | | | 45 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 15 A, VGS = 0 V | 2 |
| Source-Drain Reverse Recovery Time | trr | | 55 | 85 | ns | IF = 15 A, dI/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `CED12N10-VB`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `ced12n10-vb-etched.step` / `ced12n10-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ced12n10-vb.step` / `ced12n10-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ced12n10-vb-datasheet.pdf) (6 pp, sha256 `4e7c46f8f1f427da`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ced12n10-vb-datasheet.pdf)