component
CEA3055-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
CEA3055-VB
VBsemi Elec · MOSFETs · SOT-89
CEA3055-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin; gate-source voltage is rated at ±20 V maximum, with threshold specified at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain pin, also connected to the tab; drain-source voltage is rated at 60 V with 7.0 A continuous (steady state, TA = 25 °C) and 40 A pulsed drain current. |
| 3 | S | passive | Source pin; connects to the body diode anode and is the return for the N-channel MOSFET current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 20 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 40 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.03 | Ω | VGS = 10 V, ID = 6.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.035 | Ω | VGS = 10 V, ID = 6.0 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.04 | Ω | VGS = 10 V, ID = 6.0 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.034 | Ω | VGS = 4.5 V, ID = 5.1 A | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS = 1.7 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 18 | 27 | nC | VDS = 30 V, VGS = 10 V, ID = 6.0 A | 2 | |
| Gate Resistance | Rg | 0.5 | 1.4 | 2.4 | Ω | VGS = 0.1 V, f = 5 MHz | 2 |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 25 | 50 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 12 | 24 | ns | VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 50 | 80 | ns | IF = 1.7 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | TA = 25 °C, t ≤ 10 s, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 7 | A | TA = 25 °C, steady state, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 6.4 | A | TA = 70 °C, t ≤ 10 s, TJ = 175 °C | 1 | ||
| Continuous Drain Current | ID | 5.6 | A | TA = 70 °C, steady state, TJ = 175 °C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | 1 | |||
| Avalanche Current | IAS | 15 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 11 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 3.3 | W | TA = 25 °C, t ≤ 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation | PD | 2.3 | W | TA = 70 °C, t ≤ 10 s | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 36 | 45 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient | RthJA | 75 | 90 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 17 | 20 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
CEA3055-VB - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
cea3055-vb-etched.step/cea3055-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cea3055-vb.step/cea3055-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (6 pp, sha256
4639e6f0447cd369, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).