main
Download ZIP Propose a change
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers cea3055-vb: viewers · Ray
cea3055-vb-etched.glb Publish 0.1.0 · Ray
cea3055-vb-etched.step cea3055-vb: factory component page (tier=lcsc) · Ray
cea3055-vb-hero.glb cea3055-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
cea3055-vb-hero.overlay.json Publish 0.1.0 · Ray
cea3055-vb.glb Publish 0.1.0 · Ray
cea3055-vb.kicad_mod Publish 0.1.0 · Ray
cea3055-vb.kicad_sym Publish 0.1.0 · Ray
cea3055-vb.lbr Publish 0.1.0 · Ray
cea3055-vb.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json Set visibility: public · Ray
README.md Publish 0.1.0 · Ray

CEA3055-VB

VBsemi Elec · MOSFETs · SOT-89

CEA3055-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin; gate-source voltage is rated at ±20 V maximum, with threshold specified at VDS = VGS, ID = 250 µA.
2 D passive Drain pin, also connected to the tab; drain-source voltage is rated at 60 V with 7.0 A continuous (steady state, TA = 25 °C) and 40 A pulsed drain current.
3 S passive Source pin; connects to the body diode anode and is the return for the N-channel MOSFET current.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 20 µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 40 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 6.0 A 2
Drain-Source On-State Resistance RDS(on) 0.035 Ω VGS = 10 V, ID = 6.0 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = 10 V, ID = 6.0 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.034 Ω VGS = 4.5 V, ID = 5.1 A 2
Diode Forward Voltage VSD 0.8 1.2 V IS = 1.7 A, VGS = 0 V 2
Total Gate Charge Qg 18 27 nC VDS = 30 V, VGS = 10 V, ID = 6.0 A 2
Gate Resistance Rg 0.5 1.4 2.4 Ω VGS = 0.1 V, f = 5 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time tr 10 20 ns VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time td(off) 25 50 ns VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time tf 12 24 ns VDD = 30 V, RL = 30 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time trr 50 80 ns IF = 1.7 A, dI/dt = 100 A/µs 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 8 A TA = 25 °C, t ≤ 10 s, TJ = 175 °C 1
Continuous Drain Current ID 7 A TA = 25 °C, steady state, TJ = 175 °C 1
Continuous Drain Current ID 6.4 A TA = 70 °C, t ≤ 10 s, TJ = 175 °C 1
Continuous Drain Current ID 5.6 A TA = 70 °C, steady state, TJ = 175 °C 1
Pulsed Drain Current IDM 40 A 1
Avalanche Current IAS 15 A 1
Single Pulse Avalanche Energy EAS 11 mJ 1
Maximum Power Dissipation PD 3.3 W TA = 25 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.7 W TA = 25 °C, steady state 1
Maximum Power Dissipation PD 2.3 W TA = 70 °C, t ≤ 10 s 1
Maximum Power Dissipation PD 1.2 W TA = 70 °C, steady state 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 36 45 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 75 90 °C/W Steady State 1
Maximum Junction-to-Foot (Drain) RthJF 17 20 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: CEA3055-VB
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: cea3055-vb-etched.step / cea3055-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cea3055-vb.step / cea3055-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 4639e6f0447cd369, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF