component
CDCS504TPWRQ1
Public Made by Adomby adom
Texas Instruments Clock Buffers, Drivers, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CDCS504TPWRQ1
Texas Instruments · Clock Buffers, Drivers · TSSOP-8
CDCS504TPWRQ1 from Texas Instruments, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | input | LVCMOS clock input with an input frequency of 2 MHz to 27 MHz, a VIL maximum of 0.3 × VDD and a VIH minimum of 0.7 × VDD. |
| 2 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 3 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 4 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 5 | FS | input | Frequency multiplication select with internal pullup; FS high selects ×4 mode and FS low sets the output frequency equal to the input frequency. |
| 6 | OUT | output | LVCMOS clock output with IOH and IOL rated at ±12 mA and specified with a 15 pF test load. |
| 7 | OE | input | Output enable with internal pullup; OE low forces the output into 3-state and OE high enables the clock output. |
| 8 | VDD | power_in | 3.3-V power supply with a recommended supply range of 3 V to 3.6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSSOP-8 |
| Category | RTC/Clock Chip |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VDD | -0.5 | 4.6 | V | 3 | ||
| Input voltage | VIN | -0.5 | 4.6 | V | 3 | ||
| Output voltage | Vout | -0.5 | 4.6 | V | 3 | ||
| Input current | IIN | 20 | mA | VI < 0, VI > VDD | 3 | ||
| Continuous output current | Iout | 50 | mA | 3 | |||
| Maximum junction temperature | TJ | 125 | °C | 3 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Supply voltage | VDD | 3 | 3.6 | V | 4 | ||
| Input frequency | fIN | 2 | 27 | MHz | FS = 0 | 4 | |
| Output current, IOH/IOL | IOH/IOL | -12 | 12 | mA | 4 | ||
| Operating free-air temperature | TA | -40 | 105 | °C | 4 | ||
| Device supply current | IDD | 24 | mA | fin = 3.072 MHz; FS = 1 | 4 | ||
| Output frequency | fOUT | 2 | 27 | MHz | FS = 0 | 4 | |
| Output frequency | fOUT | 8 | 108 | MHz | FS = 1 | 4 | |
| LVCMOS input current (high) | IIH | 10 | μA | VI = VDD; VDD = 3.6 V | 4 | ||
| LVCMOS input current (low) | IIL | -10 | μA | VI = 0 V; VDD = 3.6 V | 4 | ||
| LVCMOS high-level output voltage | VOH | 2.9 | V | IOH = --0.1 mA | 4 | ||
| LVCMOS high-level output voltage | VOH | 2.4 | V | IOH = --8 mA | 4 | ||
| LVCMOS high-level output voltage | VOH | 2.2 | V | IOH = --12 mA | 4 | ||
| LVCMOS low-level output voltage | VOL | 0.1 | V | IOL = 0.1 mA | 5 | ||
| LVCMOS low-level output voltage | VOL | 0.5 | V | IOL = 8 mA | 5 | ||
| LVCMOS low-level output voltage | VOL | 0.8 | V | IOL = 12 mA | 5 | ||
| High-impedance-state output current | IOZ | -2 | 2 | μA | OE = Low | 5 | |
| Output duty cycle | Odc | 45 | 55 | % | 5 | ||
| Cycle to cycle jitter | tJIT(C-C) | 144 | ps | fout = 11.264 MHz; FS = 1; 10000 cycles | 5 | ||
| Rise time | tr | 0.65 | ns | 20%-80% | 5 | ||
| Fall time | tf | 0.55 | ns | 20%-80% | 5 | ||
| Junction-to-ambient thermal resistance | RθJA | 179.9 | °C/W | 4 | |||
| Junction-to-ambient thermal resistance, High K | RθJA | 149 | °C/W | High K; 0 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, High K | RθJA | 142 | °C/W | High K; 150 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, High K | RθJA | 138 | °C/W | High K; 250 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, High K | RθJA | 132 | °C/W | High K; 500 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, Low K | RθJA | 230 | °C/W | Low K; 0 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, Low K | RθJA | 185 | °C/W | Low K; 150 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, Low K | RθJA | 170 | °C/W | Low K; 250 CFM airflow | 4 | ||
| Junction-to-ambient thermal resistance, Low K | RθJA | 150 | °C/W | Low K; 500 CFM airflow | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 64.9 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance, High K | RθJC(top) | 65 | °C/W | High K | 4 | ||
| Junction-to-case (top) thermal resistance, Low K | RθJC(top) | 69 | °C/W | Low K | 4 | ||
| Junction-to-board thermal resistance | RθJB | 108.7 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ψJT | 9 | °C/W | 4 | |||
| Junction-to-board characterization parameter | ψJB | 107 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
CDCS504TPWRQ1 - Footprint:
Package_SO:TSSOP-8_4.4x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
cdcs504tpwrq1-etched.step/cdcs504tpwrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cdcs504tpwrq1.step/cdcs504tpwrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (18 pp, sha256
7f8c7bc6f3b4f912, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CDCS504TPWRQ1
**Texas Instruments** · Clock Buffers, Drivers · TSSOP-8
CDCS504TPWRQ1 from Texas Instruments, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN | input | LVCMOS clock input with an input frequency of 2 MHz to 27 MHz, a VIL maximum of 0.3 × VDD and a VIH minimum of 0.7 × VDD. |
| 2 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 3 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 4 | GND | power_in | Ground connection (one of three GND pins, 2, 3 and 4). |
| 5 | FS | input | Frequency multiplication select with internal pullup; FS high selects ×4 mode and FS low sets the output frequency equal to the input frequency. |
| 6 | OUT | output | LVCMOS clock output with IOH and IOL rated at ±12 mA and specified with a 15 pF test load. |
| 7 | OE | input | Output enable with internal pullup; OE low forces the output into 3-state and OE high enables the clock output. |
| 8 | VDD | power_in | 3.3-V power supply with a recommended supply range of 3 V to 3.6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSSOP-8 |
| Category | RTC/Clock Chip |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VDD | -0.5 | | 4.6 | V | | 3 |
| Input voltage | VIN | -0.5 | | 4.6 | V | | 3 |
| Output voltage | Vout | -0.5 | | 4.6 | V | | 3 |
| Input current | IIN | | | 20 | mA | VI < 0, VI > VDD | 3 |
| Continuous output current | Iout | | | 50 | mA | | 3 |
| Maximum junction temperature | TJ | | | 125 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Supply voltage | VDD | 3 | | 3.6 | V | | 4 |
| Input frequency | fIN | 2 | | 27 | MHz | FS = 0 | 4 |
| Output current, IOH/IOL | IOH/IOL | -12 | | 12 | mA | | 4 |
| Operating free-air temperature | TA | -40 | | 105 | °C | | 4 |
| Device supply current | IDD | | | 24 | mA | fin = 3.072 MHz; FS = 1 | 4 |
| Output frequency | fOUT | 2 | | 27 | MHz | FS = 0 | 4 |
| Output frequency | fOUT | 8 | | 108 | MHz | FS = 1 | 4 |
| LVCMOS input current (high) | IIH | | | 10 | μA | VI = VDD; VDD = 3.6 V | 4 |
| LVCMOS input current (low) | IIL | -10 | | | μA | VI = 0 V; VDD = 3.6 V | 4 |
| LVCMOS high-level output voltage | VOH | 2.9 | | | V | IOH = --0.1 mA | 4 |
| LVCMOS high-level output voltage | VOH | 2.4 | | | V | IOH = --8 mA | 4 |
| LVCMOS high-level output voltage | VOH | 2.2 | | | V | IOH = --12 mA | 4 |
| LVCMOS low-level output voltage | VOL | | | 0.1 | V | IOL = 0.1 mA | 5 |
| LVCMOS low-level output voltage | VOL | | | 0.5 | V | IOL = 8 mA | 5 |
| LVCMOS low-level output voltage | VOL | | | 0.8 | V | IOL = 12 mA | 5 |
| High-impedance-state output current | IOZ | -2 | | 2 | μA | OE = Low | 5 |
| Output duty cycle | Odc | 45 | | 55 | % | | 5 |
| Cycle to cycle jitter | tJIT(C-C) | | | 144 | ps | fout = 11.264 MHz; FS = 1; 10000 cycles | 5 |
| Rise time | tr | | | 0.65 | ns | 20%-80% | 5 |
| Fall time | tf | | | 0.55 | ns | 20%-80% | 5 |
| Junction-to-ambient thermal resistance | RθJA | | 179.9 | | °C/W | | 4 |
| Junction-to-ambient thermal resistance, High K | RθJA | | 149 | | °C/W | High K; 0 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, High K | RθJA | | 142 | | °C/W | High K; 150 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, High K | RθJA | | 138 | | °C/W | High K; 250 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, High K | RθJA | | 132 | | °C/W | High K; 500 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, Low K | RθJA | | 230 | | °C/W | Low K; 0 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, Low K | RθJA | | 185 | | °C/W | Low K; 150 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, Low K | RθJA | | 170 | | °C/W | Low K; 250 CFM airflow | 4 |
| Junction-to-ambient thermal resistance, Low K | RθJA | | 150 | | °C/W | Low K; 500 CFM airflow | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 64.9 | | °C/W | | 4 |
| Junction-to-case (top) thermal resistance, High K | RθJC(top) | | 65 | | °C/W | High K | 4 |
| Junction-to-case (top) thermal resistance, Low K | RθJC(top) | | 69 | | °C/W | Low K | 4 |
| Junction-to-board thermal resistance | RθJB | | 108.7 | | °C/W | | 4 |
| Junction-to-top characterization parameter | ψJT | | 9 | | °C/W | | 4 |
| Junction-to-board characterization parameter | ψJB | | 107 | | °C/W | | 4 |
## CAD (KiCad official)
- Symbol: `CDCS504TPWRQ1`
- Footprint: `Package_SO:TSSOP-8_4.4x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `cdcs504tpwrq1-etched.step` / `cdcs504tpwrq1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cdcs504tpwrq1.step` / `cdcs504tpwrq1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/cdcs504-q1.pdf) (18 pp, sha256 `7f8c7bc6f3b4f912`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cdcs504tpwrq1-datasheet.pdf)