component
CDCLVC1112PWR
Public Made by Adomby adom
Texas Instruments Clock Buffers, Drivers, Distributors, TSSOP-24. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CDCLVC1112PWR
Texas Instruments · Clock Buffers, Drivers, Distributors · TSSOP-24
CDCLVC1112PWR from Texas Instruments, in a TSSOP-24. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CLKIN | input | LVCMOS clock input, with a DC to 250 MHz frequency range at VDD 3.0 V to 3.6 V and DC to 180 MHz at VDD 2.3 V to 2.7 V. |
| 2 | 1G | input | Asynchronous output enable control that switches all outputs into a low state when 1G is low. |
| 3 | Y0 | output | LVCMOS clock output; unused outputs can be left floating. |
| 4 | GND | power_in | Device ground. |
| 5 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 6 | Y4 | output | LVCMOS clock output; unused outputs can be left floating. |
| 7 | GND | power_in | Device ground. |
| 8 | Y6 | output | LVCMOS clock output; unused outputs can be left floating. |
| 9 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 10 | Y9 | output | LVCMOS clock output; unused outputs can be left floating. |
| 11 | GND | power_in | Device ground. |
| 12 | Y11 | output | LVCMOS clock output; unused outputs can be left floating. |
| 13 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 14 | Y10 | output | LVCMOS clock output; unused outputs can be left floating. |
| 15 | GND | power_in | Device ground. |
| 16 | Y8 | output | LVCMOS clock output; unused outputs can be left floating. |
| 17 | Y7 | output | LVCMOS clock output; unused outputs can be left floating. |
| 18 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 19 | Y5 | output | LVCMOS clock output; unused outputs can be left floating. |
| 20 | GND | power_in | Device ground. |
| 21 | Y2 | output | LVCMOS clock output; unused outputs can be left floating. |
| 22 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 23 | Y3 | output | LVCMOS clock output; unused outputs can be left floating. |
| 24 | Y1 | output | LVCMOS clock output; unused outputs can be left floating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSSOP-24 |
| Category | Clock/Timing |
| Pins | 24 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VDD | -0.5 | 4.6 | V | 5 | ||
| Input voltage | VIN | -0.5 | V | 5 | |||
| Output voltage | VO | -0.5 | V | 5 | |||
| Input current | IIN | -20 | 20 | mA | 5 | ||
| Continuous output current | IO | -50 | 50 | mA | 5 | ||
| Maximum junction temperature | TJ | 125 | °C | 5 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 5 | ||
| Supply voltage, 3.3-V supply | VDD | 3 | 3.3 | 3.6 | V | 3.3-V supply | 5 |
| Supply voltage, 2.5-V supply | VDD | 2.3 | 2.5 | 2.7 | V | 2.5-V supply | 5 |
| Input slew rate | tr/tf | 1 | 4 | V/ns | 5 | ||
| Minimum pulse width at CLKIN | tw | 1.8 | ns | VDD = 3.0 V to 3.6 V | 5 | ||
| Minimum pulse width at CLKIN | tw | 2.75 | ns | VDD = 2.3 V to 2.7 V | 5 | ||
| LVCMOS clock input frequency | fCLK | 250 | MHz | VDD = 3.0 V to 3.6 V | 5 | ||
| LVCMOS clock input frequency | fCLK | 180 | MHz | VDD = 2.3 V to 2.7 V | 5 | ||
| Operating free-air temperature | TA | -40 | 85 | °C | 5 | ||
| Static device current, 3.6 V | IDD | 6 | 10 | mA | 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V | 6 | |
| Static device current, 2.7 V | IDD | 3 | 6 | mA | 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 2.7 V | 6 | |
| Power-down current | IPD | 60 | µA | 1G = 0 V; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V or 2.7 V | 6 | ||
| Input leakage current at 1G | II | 8 | µA | VI = 0 V or VDD, VDD = 3.6 V or 2.7 V | 6 | ||
| Input leakage current at CLKIN | II | 25 | µA | VI = 0 V or VDD, VDD = 3.6 V or 2.7 V | 6 | ||
| Power dissipation capacitance per output | CPD | 6 | pF | VDD = 3.3 V; f = 10 MHz | 6 | ||
| Power dissipation capacitance per output | CPD | 4.5 | pF | VDD = 2.5 V; f = 10 MHz | 6 | ||
| Output frequency | fOUT | 250 | MHz | VDD = 3 V to 3.6 V | 6 | ||
| Output frequency | fOUT | 180 | MHz | VDD = 2.3 V to 2.7 V | 6 | ||
| High-level output voltage, 3.3 V | VOH | 2.9 | V | VDD = 3 V, IOH = -0.1 mA | 6 | ||
| High-level output voltage, 3.3 V | VOH | 2.5 | V | VDD = 3 V, IOH = -8 mA | 6 | ||
| High-level output voltage, 3.3 V | VOH | 2.2 | V | VDD = 3 V, IOH = -12 mA | 6 | ||
| Low-level output voltage, 3.3 V | VOL | 0.1 | V | VDD = 3 V, IOL = 0.1 mA | 6 | ||
| Low-level output voltage, 3.3 V | VOL | 0.5 | V | VDD = 3 V, IOL = 8 mA | 6 | ||
| Low-level output voltage, 3.3 V | VOL | 0.8 | V | VDD = 3 V, IOL = 12 mA | 6 | ||
| High-level output voltage, 2.5 V | VOH | 2.2 | V | VDD = 2.3 V, IOH = -0.1 mA | 6 | ||
| High-level output voltage, 2.5 V | VOH | 1.7 | V | VDD = 2.3 V, IOH = -8 mA | 6 | ||
| Low-level output voltage, 2.5 V | VOL | 0.1 | V | VDD = 2.3 V, IOL = 0.1 mA | 6 | ||
| Low-level output voltage, 2.5 V | VOL | 0.5 | V | VDD = 2.3 V, IOL = 8 mA | 6 | ||
| Propagation delay CLKIN to Yn, 3.3 V | tPLH, tPHL | 0.8 | 2 | ns | CLKIN to Yn | 7 | |
| Output skew, 3.3 V | tsk(o) | 50 | ps | Equal load of each output | 7 | ||
| Rise and fall time, 3.3 V | tr/tf | 0.3 | 0.8 | ns | 20%-80% (VOH - VOL) | 7 | |
| Output disable time, 3.3 V | tDIS | 6 | ns | 1G to Yn | 7 | ||
| Output enable time, 3.3 V | tEN | 6 | ns | 1G to Yn | 7 | ||
| Pulse skew, 3.3 V | tsk(p) | 180 | ps | To be measured with input duty cycle of 50% | 7 | ||
| Part-to-part skew, 3.3 V | tsk(pp) | 0.5 | ns | Under equal operating conditions for two parts | 7 | ||
| Additive jitter rms, 3.3 V | tjitter | 100 | fs | 12 kHz to 20 MHz, fOUT = 250 MHz | 7 | ||
| Propagation delay CLKIN to Yn, 2.5 V | tPLH, tPHL | 1 | 2.6 | ns | CLKIN to Yn | 7 | |
| Output skew, 2.5 V | tsk(o) | 50 | ps | Equal load of each output | 7 | ||
| Rise and fall time, 2.5 V | tr/tf | 0.3 | 1.2 | ns | 20%-80% reference point | 7 | |
| Output disable time, 2.5 V | tDIS | 10 | ns | 1G to Yn | 7 | ||
| Output enable time, 2.5 V | tEN | 10 | ns | 1G to Yn | 7 | ||
| Pulse skew, 2.5 V | tsk(p) | 220 | ps | To be measured with input duty cycle of 50% | 7 | ||
| Part-to-part skew, 2.5 V | tsk(pp) | 1.2 | ns | Under equal operating conditions for two parts | 7 | ||
| Additive jitter rms, 2.5 V | tjitter | 350 | fs | 12 kHz to 20 MHz, fOUT = 180 MHz | 7 | ||
| Junction-to-ambient thermal resistance, 24-pin TSSOP | RθJA | 87.9 | °C/W | Natural convection, JEDEC high-K board | 6 | ||
| Junction-to-case (top) thermal resistance, 24-pin TSSOP | RθJC(top) | 26.5 | °C/W | Cold plate test on package top | 6 |
CAD (KiCad official)
- Symbol:
CDCLVC1112PWR - Footprint:
Package_SO:TSSOP-24_4.4x7.8mm_P0.65mm - 3D model: TSSOP-24 (KiCad packages3D, STEP)
- 3D model files:
cdclvc1112pwr-etched.step/cdclvc1112pwr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cdclvc1112pwr.step/cdclvc1112pwr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (37 pp, sha256
7b5ccb44b8bc0016, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CDCLVC1112PWR
**Texas Instruments** · Clock Buffers, Drivers, Distributors · TSSOP-24
CDCLVC1112PWR from Texas Instruments, in a TSSOP-24. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CLKIN | input | LVCMOS clock input, with a DC to 250 MHz frequency range at VDD 3.0 V to 3.6 V and DC to 180 MHz at VDD 2.3 V to 2.7 V. |
| 2 | 1G | input | Asynchronous output enable control that switches all outputs into a low state when 1G is low. |
| 3 | Y0 | output | LVCMOS clock output; unused outputs can be left floating. |
| 4 | GND | power_in | Device ground. |
| 5 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 6 | Y4 | output | LVCMOS clock output; unused outputs can be left floating. |
| 7 | GND | power_in | Device ground. |
| 8 | Y6 | output | LVCMOS clock output; unused outputs can be left floating. |
| 9 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 10 | Y9 | output | LVCMOS clock output; unused outputs can be left floating. |
| 11 | GND | power_in | Device ground. |
| 12 | Y11 | output | LVCMOS clock output; unused outputs can be left floating. |
| 13 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 14 | Y10 | output | LVCMOS clock output; unused outputs can be left floating. |
| 15 | GND | power_in | Device ground. |
| 16 | Y8 | output | LVCMOS clock output; unused outputs can be left floating. |
| 17 | Y7 | output | LVCMOS clock output; unused outputs can be left floating. |
| 18 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 19 | Y5 | output | LVCMOS clock output; unused outputs can be left floating. |
| 20 | GND | power_in | Device ground. |
| 21 | Y2 | output | LVCMOS clock output; unused outputs can be left floating. |
| 22 | VDD | power_in | Power 2.5-V or 3.3-V device supply. |
| 23 | Y3 | output | LVCMOS clock output; unused outputs can be left floating. |
| 24 | Y1 | output | LVCMOS clock output; unused outputs can be left floating. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TSSOP-24 |
| Category | Clock/Timing |
| Pins | 24 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VDD | -0.5 | | 4.6 | V | | 5 |
| Input voltage | VIN | -0.5 | | | V | | 5 |
| Output voltage | VO | -0.5 | | | V | | 5 |
| Input current | IIN | -20 | | 20 | mA | | 5 |
| Continuous output current | IO | -50 | | 50 | mA | | 5 |
| Maximum junction temperature | TJ | | | 125 | °C | | 5 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 5 |
| Supply voltage, 3.3-V supply | VDD | 3 | 3.3 | 3.6 | V | 3.3-V supply | 5 |
| Supply voltage, 2.5-V supply | VDD | 2.3 | 2.5 | 2.7 | V | 2.5-V supply | 5 |
| Input slew rate | tr/tf | 1 | | 4 | V/ns | | 5 |
| Minimum pulse width at CLKIN | tw | 1.8 | | | ns | VDD = 3.0 V to 3.6 V | 5 |
| Minimum pulse width at CLKIN | tw | 2.75 | | | ns | VDD = 2.3 V to 2.7 V | 5 |
| LVCMOS clock input frequency | fCLK | | | 250 | MHz | VDD = 3.0 V to 3.6 V | 5 |
| LVCMOS clock input frequency | fCLK | | | 180 | MHz | VDD = 2.3 V to 2.7 V | 5 |
| Operating free-air temperature | TA | -40 | | 85 | °C | | 5 |
| Static device current, 3.6 V | IDD | | 6 | 10 | mA | 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V | 6 |
| Static device current, 2.7 V | IDD | | 3 | 6 | mA | 1G = VDD; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 2.7 V | 6 |
| Power-down current | IPD | | | 60 | µA | 1G = 0 V; CLKIN = 0 V or VDD; IO = 0 mA; VDD = 3.6 V or 2.7 V | 6 |
| Input leakage current at 1G | II | | | 8 | µA | VI = 0 V or VDD, VDD = 3.6 V or 2.7 V | 6 |
| Input leakage current at CLKIN | II | | | 25 | µA | VI = 0 V or VDD, VDD = 3.6 V or 2.7 V | 6 |
| Power dissipation capacitance per output | CPD | | 6 | | pF | VDD = 3.3 V; f = 10 MHz | 6 |
| Power dissipation capacitance per output | CPD | | 4.5 | | pF | VDD = 2.5 V; f = 10 MHz | 6 |
| Output frequency | fOUT | | | 250 | MHz | VDD = 3 V to 3.6 V | 6 |
| Output frequency | fOUT | | | 180 | MHz | VDD = 2.3 V to 2.7 V | 6 |
| High-level output voltage, 3.3 V | VOH | 2.9 | | | V | VDD = 3 V, IOH = -0.1 mA | 6 |
| High-level output voltage, 3.3 V | VOH | 2.5 | | | V | VDD = 3 V, IOH = -8 mA | 6 |
| High-level output voltage, 3.3 V | VOH | 2.2 | | | V | VDD = 3 V, IOH = -12 mA | 6 |
| Low-level output voltage, 3.3 V | VOL | | | 0.1 | V | VDD = 3 V, IOL = 0.1 mA | 6 |
| Low-level output voltage, 3.3 V | VOL | | | 0.5 | V | VDD = 3 V, IOL = 8 mA | 6 |
| Low-level output voltage, 3.3 V | VOL | | | 0.8 | V | VDD = 3 V, IOL = 12 mA | 6 |
| High-level output voltage, 2.5 V | VOH | 2.2 | | | V | VDD = 2.3 V, IOH = -0.1 mA | 6 |
| High-level output voltage, 2.5 V | VOH | 1.7 | | | V | VDD = 2.3 V, IOH = -8 mA | 6 |
| Low-level output voltage, 2.5 V | VOL | | | 0.1 | V | VDD = 2.3 V, IOL = 0.1 mA | 6 |
| Low-level output voltage, 2.5 V | VOL | | | 0.5 | V | VDD = 2.3 V, IOL = 8 mA | 6 |
| Propagation delay CLKIN to Yn, 3.3 V | tPLH, tPHL | | 0.8 | 2 | ns | CLKIN to Yn | 7 |
| Output skew, 3.3 V | tsk(o) | | | 50 | ps | Equal load of each output | 7 |
| Rise and fall time, 3.3 V | tr/tf | | 0.3 | 0.8 | ns | 20%-80% (VOH - VOL) | 7 |
| Output disable time, 3.3 V | tDIS | | | 6 | ns | 1G to Yn | 7 |
| Output enable time, 3.3 V | tEN | | | 6 | ns | 1G to Yn | 7 |
| Pulse skew, 3.3 V | tsk(p) | | | 180 | ps | To be measured with input duty cycle of 50% | 7 |
| Part-to-part skew, 3.3 V | tsk(pp) | | | 0.5 | ns | Under equal operating conditions for two parts | 7 |
| Additive jitter rms, 3.3 V | tjitter | | | 100 | fs | 12 kHz to 20 MHz, fOUT = 250 MHz | 7 |
| Propagation delay CLKIN to Yn, 2.5 V | tPLH, tPHL | | 1 | 2.6 | ns | CLKIN to Yn | 7 |
| Output skew, 2.5 V | tsk(o) | | | 50 | ps | Equal load of each output | 7 |
| Rise and fall time, 2.5 V | tr/tf | | 0.3 | 1.2 | ns | 20%-80% reference point | 7 |
| Output disable time, 2.5 V | tDIS | | | 10 | ns | 1G to Yn | 7 |
| Output enable time, 2.5 V | tEN | | | 10 | ns | 1G to Yn | 7 |
| Pulse skew, 2.5 V | tsk(p) | | | 220 | ps | To be measured with input duty cycle of 50% | 7 |
| Part-to-part skew, 2.5 V | tsk(pp) | | | 1.2 | ns | Under equal operating conditions for two parts | 7 |
| Additive jitter rms, 2.5 V | tjitter | | | 350 | fs | 12 kHz to 20 MHz, fOUT = 180 MHz | 7 |
| Junction-to-ambient thermal resistance, 24-pin TSSOP | RθJA | | 87.9 | | °C/W | Natural convection, JEDEC high-K board | 6 |
| Junction-to-case (top) thermal resistance, 24-pin TSSOP | RθJC(top) | | 26.5 | | °C/W | Cold plate test on package top | 6 |
## CAD (KiCad official)
- Symbol: `CDCLVC1112PWR`
- Footprint: `Package_SO:TSSOP-24_4.4x7.8mm_P0.65mm`
- 3D model: TSSOP-24 (KiCad packages3D, STEP)
- 3D model files: `cdclvc1112pwr-etched.step` / `cdclvc1112pwr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cdclvc1112pwr.step` / `cdclvc1112pwr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/cdclvc1112.pdf) (37 pp, sha256 `7b5ccb44b8bc0016`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cdclvc1112pwr-datasheet.pdf)