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CD74HC373M

Texas Instruments · Latches · SOIC-20-300mil

CD74HC373M from Texas Instruments, in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OE input Buffered output-enable; when OE is high the eight Q outputs go to the high-impedance state without affecting the latches.
2 1Q tri_state Output of latch 1, which follows 1D while LE is high and is high-impedance while OE is high.
3 1D input Data input of latch 1, latched when LE goes low.
4 2D input Data input of latch 2, latched when LE goes low.
5 2Q tri_state Output of latch 2, which follows 2D while LE is high and is high-impedance while OE is high.
6 3Q tri_state Output of latch 3, which follows 3D while LE is high and is high-impedance while OE is high.
7 3D input Data input of latch 3, latched when LE goes low.
8 4D input Data input of latch 4, latched when LE goes low.
9 4Q tri_state Output of latch 4, which follows 4D while LE is high and is high-impedance while OE is high.
10 GND power_in Ground reference for the device.
11 LE input Latch enable; when high the Q outputs follow the D inputs and when low they hold the latched data.
12 5Q tri_state Output of latch 5, which follows 5D while LE is high and is high-impedance while OE is high.
13 5D input Data input of latch 5, latched when LE goes low.
14 6D input Data input of latch 6, latched when LE goes low.
15 6Q tri_state Output of latch 6, which follows 6D while LE is high and is high-impedance while OE is high.
16 7Q tri_state Output of latch 7, which follows 7D while LE is high and is high-impedance while OE is high.
17 7D input Data input of latch 7, latched when LE goes low.
18 8D input Data input of latch 8, latched when LE goes low.
19 8Q tri_state Output of latch 8, which follows 8D while LE is high and is high-impedance while OE is high.
20 VCC power_in Supply voltage, 2 V to 6 V VCC operation per the recommended operating conditions.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-20-300mil
Category Logic
Pins 20

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage range VCC -0.5 7 V 4
Input clamp current IIK -20 20 mA VI < 0 or VI > VCC 4
Output clamp current IOK -20 20 mA VO < 0 or VO > VCC 4
Continuous output drain current per output IO -35 35 mA VO = 0 to VCC 4
Continuous output source or sink current per output IO -25 25 mA VO = 0 to VCC 4
Continuous current through VCC or GND -50 50 mA 4
Junction temperature TJ 150 °C 4
Storage temperature range Tstg -65 150 °C 4
Supply voltage VCC 2 6 V 4
High-level input voltage VIH 1.5 V VCC = 2 V 4
High-level input voltage VIH 3.15 V VCC = 4.5 V 4
High-level input voltage VIH 4.2 V VCC = 6 V 4
Low-level input voltage VIL 0.5 V VCC = 2 V 4
Low-level input voltage VIL 1.35 V VCC = 4.5 V 4
Low-level input voltage VIL 1.8 V VCC = 6 V 4
Input voltage VI 0 V maximum VCC 4
Output voltage VO 0 V maximum VCC 4
Input transition (rise and fall) time tt 1000 ns VCC = 2 V 4
Input transition (rise and fall) time tt 500 ns VCC = 4.5 V 4
Input transition (rise and fall) time tt 400 ns VCC = 6 V 4
Operating free-air temperature TA -55 125 °C 4
Junction-to-ambient thermal resistance RθJA 109.1 °C/W DW (SOIC), 20 pins 4
Junction-to-case (top) thermal resistance RθJC(top) 76 °C/W DW (SOIC), 20 pins 4
Junction-to-board thermal resistance RθJB 77.6 °C/W DW (SOIC), 20 pins 4
Junction-to-top characterization parameter ψJT 51.5 °C/W DW (SOIC), 20 pins 4
Junction-to-top characterization parameter ψJB 77.1 °C/W DW (SOIC), 20 pins 4
High-level output voltage VOH 1.9 V VI = VIH or VIL; IOH = -20 μA; VCC = 2 V; TA = 25°C 5
High-level output voltage VOH 4.4 V VI = VIH or VIL; IOH = -20 μA; VCC = 4.5 V; TA = 25°C 5
High-level output voltage VOH 5.9 V VI = VIH or VIL; IOH = -20 μA; VCC = 6 V; TA = 25°C 5
High-level output voltage VOH 3.98 V VI = VIH or VIL; IOH = -6 mA; VCC = 4.5 V; TA = 25°C 5
High-level output voltage VOH 3.7 V VI = VIH or VIL; IOH = -6 mA; VCC = 4.5 V; TA = -55°C to 125°C 5
High-level output voltage VOH 5.48 V VI = VIH or VIL; IOH = -7.8 mA; VCC = 6 V; TA = 25°C 5
High-level output voltage VOH 5.2 V VI = VIH or VIL; IOH = -7.8 mA; VCC = 6 V; TA = -55°C to 125°C 5
Low-level output voltage VOL 0.1 V VI = VIH or VIL; IOL = 20 μA; VCC = 2 V; TA = 25°C 5
Low-level output voltage VOL 0.26 V VI = VIH or VIL; IOL = 6 mA; VCC = 4.5 V; TA = 25°C 5
Low-level output voltage VOL 0.4 V VI = VIH or VIL; IOL = 6 mA; VCC = 4.5 V; TA = -55°C to 125°C 5
Input leakage current II -0.1 0.1 μA VI = VCC or 0; VCC = 6 V; TA = 25°C 5
Input leakage current II -1 1 μA VI = VCC or 0; VCC = 6 V; TA = -55°C to 125°C 5
Off-state output leakage current IOZ -0.5 0.5 μA VO = VCC or 0; VCC = 6 V; TA = 25°C 5
Off-state output leakage current IOZ -10 10 μA VO = VCC or 0; VCC = 6 V; TA = -55°C to 125°C 5
Quiescent supply current ICC 8 μA VI = VCC or 0; IO = 0; VCC = 6 V; TA = 25°C 5
Quiescent supply current ICC 160 μA VI = VCC or 0; IO = 0; VCC = 6 V; TA = -55°C to 125°C 5

CAD (KiCad official)

  • Symbol: CD74HC373M
  • Footprint: Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm
  • 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
  • 3D model files: cd74hc373m-etched.step / cd74hc373m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cd74hc373m.step / cd74hc373m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (21 pp, sha256 c1a1a69ac5b95454, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF