component

CBMuD1201HAS8

Public Made by Adom

by adom

Corebai Microelectronics Digital Isolators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsignal isolation devicescbmud1201has8factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
cbmud1201has8 / README.md
History Download
Ray Publish 0.1.0 11ebcdd 13d ago

CBMuD1201HAS8

Corebai Microelectronics · Digital Isolators · SOIC-8

CBMuD1201HAS8 from Corebai Microelectronics, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Side 1 supply, 2.5V to 5.5V, with a 0.01uF-0.1uF bypass capacitor to GND1 shown in the diagram.
2 VOA output Channel A output on side 1, driven from VIA on side 2 (CBMuD1201 bidirectional version).
3 VIB input Channel B input on side 1, with logic high threshold 0.7xVDD and logic low threshold 0.3xVDD; it is transmitted to VOB.
4 GND1 power_in Ground reference for side 1, isolated from side 2 (3000V RMS isolation rating).
5 GND2 power_in Ground reference for side 2, isolated from side 1 (3000V RMS isolation rating).
6 VOB output Channel B output on side 2, driven from VIB on side 1.
7 VIA input Channel A input on side 2, with logic high threshold 0.7xVDD and logic low threshold 0.3xVDD; it is transmitted to VOA.
8 VDD2 power_in Side 2 supply, 2.5V to 5.5V, with a 0.01uF-0.1uF bypass capacitor to GND2 shown in the diagram.

Key specifications

Parameter Value
Manufacturer Corebai Microelectronics
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC VCC -0.3 6 V 2
I/O port maximum output current IO -50 50 mA 2
Junction temperature TJ 150 ℃ 2
Storage temperature TS -50 150 ℃ 2
ESD Human Body Model VESD-HBM -3000 3000 V Human Body Model, per ANSI/ESDA/JEDEC JS-001 2
ESD Charged Device Model VESD-CDM -500 500 V Charged Device Model, per JEDEC specification JESD22-C101 2
Supply voltage operating VDD 2.5 5.5 V 2
Rated dielectric insulation voltage 3000 V RMS 持续 1 分钟 2
Minimum external creepage distance 3.9 mm 测量输入端至输出端，沿壳体最短距离 2
Minimum PCB clearance 3.9 mm PCB 各层电源域最短距离 2
Data rate (2.5V) DR 50 MHz 3
Propagation delay high to low (2.5V) tPHL 10 13 ns 50%输入至 50%输出 3
Propagation delay low to high (2.5V) tPLH 10 13 ns 50%输入至 50%输出 3
Minimum pulse width (2.5V) PW 10 ns 3
Channel matching (2.5V) tM 3 ns 3
Pulse width distortion (2.5V) PWD 6 ns 3
Output rise time (2.5V) tr 1.5 2 3 ns 输出端上升时间，10%~90% 10pF 负载 3
Output fall time (2.5V) tf 1.5 2 3 ns 输出端下升时间，90%~10% 10pF 负载 3
Quiescent supply current (2.5V) IDDI(Q) 280 uA/通道 输入悬空 3
Dynamic supply current 1MHz (2.5V) IDDI(D) 4.5 5.4 6.4 mA/通道 输入信号为 1MHz 50%占空比方波 3
Dynamic supply current 10MHz (2.5V) IDDI(D) 6.6 8 9.2 mA/通道 输入信号为 10MHz，50%占空比方波 3
Dynamic supply current 30MHz (2.5V) IDDI(D) 10.3 12.7 15.2 mA/通道 输入信号为 30MHz，50%占空比方波 3
Data rate (3.3V) DR 50 MHz 3
Propagation delay high to low (3.3V) tPHL 7 12 ns 50%输入至 50%输出 3
Propagation delay low to high (3.3V) tPLH 7 12 ns 50%输入至 50%输出 3
Minimum pulse width (3.3V) PW 10 ns 3
Channel matching (3.3V) tM 3 ns 3
Pulse width distortion (3.3V) PWD 6 ns 3
Output rise time (3.3V) tr 1.5 2 3 ns 输出端上升时间，10%~90% 10pF 负载 3
Output fall time (3.3V) tf 1.5 2 3 ns 输出端下升时间，90%~10% 10pF 负载 3
Quiescent supply current (3.3V) IDDI(Q) 290 uA/通道 输入悬空 3
Dynamic supply current 1MHz (3.3V) IDDI(D) 4.9 5.9 7 mA/通道 输入信号为 1MHz 50%占空比方波 3
Dynamic supply current 10MHz (3.3V) IDDI(D) 7.5 9.3 11 mA/通道 输入信号为 10MHz，50%占空比方波 3
Dynamic supply current 30MHz (3.3V) IDDI(D) 13.5 16.2 19 mA/通道 输入信号为 30MHz，50%占空比方波 3
Data rate (5V) DR 50 MHz 4
Propagation delay high to low (5V) tPHL 5 8 ns 50%输入至 50%输出 4
Propagation delay low to high (5V) tPLH 5 8 ns 50%输入至 50%输出 4
Minimum pulse width (5V) PW 10 ns 4
Channel matching (5V) tM 3 ns 4
Pulse width distortion (5V) PWD 6 ns 4
Output rise time (5V) tr 1.5 2 3 ns 输出端上升时间，10%~90% 10pF 负载 4
Output fall time (5V) tf 1.5 2 3 ns 输出端下升时间，90%~10% 10pF 负载 4
Quiescent supply current (5V) IDDI(Q) 300 uA/通道 输入悬空 4
Dynamic supply current 1MHz (5V) IDDI(D) 5.6 6.8 8.1 mA/通道 输入信号为 1MHz 50%占空比方波 4
Dynamic supply current 10MHz (5V) IDDI(D) 10.1 12.1 14.5 mA/通道 输入信号为 10MHz，50%占空比方波 4
Dynamic supply current 30MHz (5V) IDDI(D) 18.1 22 26 mA/通道 输入信号为 30MHz，50%占空比方波 4

CAD (KiCad official)

  • Symbol: CBMuD1201HAS8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: cbmud1201has8-etched.step / cbmud1201has8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cbmud1201has8.step / cbmud1201has8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Corebai Microelectronics datasheet (6 pp, sha256 c4ad5afd2baee3e3, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF