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CB2302W

Public Made by Adom

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CBI MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CB2302W

CBI · MOSFETs · SOT-323

CB2302W from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated ±8 V.
2 SOURCE passive Source terminal of the N-channel MOSFET; continuous source-drain diode conduction current IS is rated 0.6 A.
3 DRAIN passive Drain terminal of the N-channel MOSFET; drain-source voltage VDS is rated 20 V and continuous drain current ID is rated 2.1 A.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Continuous Drain Current ID 2.1 A 1
Continuous Source-Drain Current (Diode Conduction) IS 0.6 A 1
Power Dissipation PD 0.35 W 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W t≤5s 1
Operating Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =10µA 2
Gate-threshold voltage VGS(th) 0.6 0.95 1.2 V VDS =VGS, ID =250µA 2
Gate-body leakage IGSS -100 100 nA VDS =0V, VGS =±8V 2
Zero gate voltage drain current IDSS 1 µA VDS =20V, VGS =0V 2
Drain-source on-resistance rDS(on) 0.045 0.06 Ω VGS =4.5V, ID =3.6A 2
Drain-source on-resistance rDS(on) 0.07 0.115 Ω VGS =2.5V, ID =3.1A 2
Diode forward voltage VSD 0.76 1.2 V IS=0.94A,VGS=0V 2
Total gate charge Qg 4 10 nC VDS =10V,VGS =4.5V,ID =3.6A 2
Turn-on delay time td(on) 7 15 ns VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω 2
Rise time tr 55 80 ns VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω 2
Turn-off delay time td(off) 16 60 ns VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω 2
Fall time tf 10 25 ns VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω 2
Forward transconductance gfs 8 S VDS =5V, ID =3.6A 2
Gate-source charge Qgs 0.65 nC VDS =10V,VGS =4.5V,ID =3.6A 2
Gate-drain charge Qgd 1.5 nC VDS =10V,VGS =4.5V,ID =3.6A 2
Input capacitance Ciss 300 pF VDS =10V,VGS =0V,f=1MHz 2
Output capacitance Coss 120 pF VDS =10V,VGS =0V,f=1MHz 2
Reverse transfer capacitance Crss 80 pF VDS =10V,VGS =0V,f=1MHz 2

CAD (KiCad official)

  • Symbol: CB2302W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: cb2302w-etched.step / cb2302w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cb2302w.step / cb2302w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 b5845b4644aef954, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF