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CAT93C86BVI-GT3

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by adom

onsemi EEPROM, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CAT93C86BVI-GT3

onsemi · EEPROM · SOIC-8

CAT93C86BVI-GT3 from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS input Chip Select input that selects the device; it must be deselected for at least tCSMIN to start the self-timed write or erase cycle.
2 SK input Clock input that clocks instructions, addresses and data into DI on the rising edge, with a maximum frequency of 4 MHz at VCC > 4.5 V and 2 MHz at VCC < 4.5 V.
3 DI input Serial Data Input that receives the start bit, opcode, address and write data on the rising edge of SK.
4 DO output Serial Data Output that is high-impedance except during read data output and ready/busy status polling after a write.
5 GND power_in Ground.
6 ORG input Memory Organization select: VCC selects x16, GND selects x8, and an unconnected pin selects x16 through an internal pull-up.
7 PE input Program Enable input that must be 1 for Write, Erase, Write All and Erase All, is don't-care for EWEN/EWDS, and leaves the device in Program Enabled mode if left floating.
8 VCC power_in Power supply, 1.8 V (1.65 V for the -L temperature option) to 5.5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature -65 150 °C 3
Voltage on Any Pin with Respect to Ground -0.5 6.5 V Note 1 3
Supply Current (Write) ICC1 2 mA Write, VCC = 5.0 V 3
Supply Current (Read) ICC2 500 µA Read, DO open, fSK = 2 MHz, VCC = 5.0 V 3
Standby Current (x8 Mode) ISB1 2 µA VIN = GND or VCC, CS = GND, ORG = GND, TA = -40°C to +85°C 3
Standby Current (x16 Mode) ISB2 1 µA VIN = GND or VCC, CS = GND, ORG = Float or VCC, TA = -40°C to +85°C 3
Input Leakage Current ILI 1 µA VIN = GND to VCC, TA = -40°C to +85°C 3
Output Leakage Current ILO 1 µA VOUT = GND to VCC, CS = GND, TA = -40°C to +85°C 3
Input Low Voltage VIL1 -0.1 0.8 V 4.5 V ≤ VCC < 5.5 V 3
Input High Voltage VIH1 2 V 4.5 V ≤ VCC < 5.5 V; max is VCC + 1 3
Input Low Voltage VIL2 0 V 1.65 V ≤ VCC < 4.5 V; max is VCC x 0.2 3
Output Low Voltage VOL1 0.4 V 4.5 V ≤ VCC < 5.5 V, IOL = 3 mA 3
Output High Voltage VOH1 2.4 V 4.5 V ≤ VCC < 5.5 V, IOH = -400 µA 3
Output Low Voltage VOL2 0.2 V 1.65 V ≤ VCC < 4.5 V, IOL = 1 mA 3
Output Capacitance (DO) COUT 5 pF VOUT = 0 V 3
Input Capacitance (CS, SK, DI, ORG) CIN 5 pF VIN = 0 V 3
Power-up to Read Operation tPUR 1 ms 3
Power-up to Write Operation tPUW 1 ms 3
CS Setup Time tCSS 50 ns VCC < 4.5 V 4
CS Hold Time tCSH 0 ns VCC < 4.5 V 4
DI Setup Time tDIS 100 ns VCC < 4.5 V 4
DI Setup Time tDIS 50 ns VCC > 4.5 V 4
DI Hold Time tDIH 100 ns VCC < 4.5 V 4
DI Hold Time tDIH 50 ns VCC > 4.5 V 4
Output Delay to 1 tPD1 0.25 µs VCC < 4.5 V 4
Output Delay to 1 tPD1 0.1 µs VCC > 4.5 V 4
Output Delay to 0 tPD0 0.25 µs VCC < 4.5 V 4
Output Delay to 0 tPD0 0.1 µs VCC > 4.5 V 4
Output Delay to High-Z tHZ 100 ns VCC < 4.5 V and VCC > 4.5 V 4
Program/Erase Pulse Width tEW 5 ms VCC < 4.5 V and VCC > 4.5 V 4
Minimum CS Low Time tCSMIN 0.25 µs VCC < 4.5 V 4
Minimum CS Low Time tCSMIN 0.1 µs VCC > 4.5 V 4
Minimum SK High Time tSKHI 0.25 µs VCC < 4.5 V 4
Minimum SK High Time tSKHI 0.1 µs VCC > 4.5 V 4
Minimum SK Low Time tSKLOW 0.25 µs VCC < 4.5 V 4
Minimum SK Low Time tSKLOW 0.1 µs VCC > 4.5 V 4
Output Delay to Status Valid tSV 0.25 µs VCC < 4.5 V 4
Output Delay to Status Valid tSV 0.1 µs VCC > 4.5 V 4
Maximum Clock Frequency SKMAX 2000 kHz VCC < 4.5 V, min DC 4
Maximum Clock Frequency SKMAX 4000 kHz VCC > 4.5 V, min DC 4
Endurance NEND 1e+06 Program / Erase Cycles Block Mode, VCC = 5 V, 25°C 3
Data Retention TDR 100 Years 3
Operating Temperature Range (Industrial) TA -40 85 °C I = Industrial, CAT93C86BVI-GT3 15
Supply Voltage Range VCC 1.8 5.5 V TA = -40°C to +125°C table heading; 1.65 V applies to -20°C to +85°C L option 3

CAD (KiCad official)

  • Symbol: CAT93C86BVI-GT3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: cat93c86bvi-gt3-etched.step / cat93c86bvi-gt3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cat93c86bvi-gt3.step / cat93c86bvi-gt3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (15 pp, sha256 2089e60b9671757a, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF