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CAT93C66VI-GT3

Public Made by Adom

by adom

onsemi EEPROM, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CAT93C66VI-GT3

onsemi · EEPROM · SOIC-8

CAT93C66VI-GT3 from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS input Chip Select must be deselected for a minimum of tCSMIN (0.25 µs) after a write, erase, or ERAL/WRAL command, with CS setup time 50 ns and hold time 0 ns.
2 SK input Serial clock input whose rising edge clocks instructions, addresses and write data into DI, with a maximum clock frequency of 2000 kHz (DC) and minimum high and low times of 0.25 µs.
3 DI input Serial data input that samples instructions, addresses and write data on the rising edge of SK, with setup and hold times of 100 ns each.
4 DO output Serial data output that is in high impedance except during read or when polling ready/busy status, with an output capacitance of 5 pF (max) and a tHZ of 100 ns to high-Z.
5 GND power_in Ground reference for the device; the ORG pin must be tied to GND to select the x8 organization.
6 ORG input Memory organization select: connect to VCC for x16 (256 x 16-bit registers), to GND for x8 (512 x 8-bit registers), and if left unconnected an internal pull-up selects x16.
7 NC unconnected No internal connection on this package pin.
8 VCC power_in Single power supply input, operating from 1.8 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature -65 150 °C 2
Voltage on Any Pin with Respect to Ground -0.5 6.5 V 2
Endurance NEND 1e+06 Program / Erase Cycles Block Mode, VCC = 5 V, 25°C 2
Data Retention TDR 100 Years 2
Power Supply Current (Write) ICC1 1 mA fSK = 1 MHz, VCC = 5.0 V 2
Power Supply Current (Read) ICC2 500 µA fSK = 1 MHz, VCC = 5.0 V 2
Power Supply Current (Standby) (x8 Mode) ISB1 2 µA VIN = GND or VCC, CS = GND, ORG = GND, TA = −40°C to +85°C 2
Power Supply Current (Standby) (x16 Mode) ISB2 1 µA VIN = GND or VCC, CS = GND, ORG = Float or VCC, TA = −40°C to +85°C 2
Input Leakage Current ILI 1 µA VIN = GND to VCC, TA = −40°C to +85°C 2
Output Leakage Current ILO 1 µA VOUT = GND to VCC, CS = GND, TA = −40°C to +85°C 2
Input Low Voltage VIL1 -0.1 0.8 V 4.5 V ≤ VCC < 5.5 V 2
Input High Voltage VIH1 2 V 4.5 V ≤ VCC < 5.5 V 2
Input Low Voltage VIL2 0 V 1.8 V ≤ VCC < 4.5 V 2
Output Low Voltage VOL1 0.4 V 4.5 V ≤ VCC < 5.5 V, IOL = 2.1 mA 2
Output High Voltage VOH1 2.4 V 4.5 V ≤ VCC < 5.5 V, IOH = −400 µA 2
Output Low Voltage VOL2 0.2 V 1.8 V ≤ VCC < 4.5 V, IOL = 1 mA 2
Output Capacitance (DO) COUT 5 pF VOUT = 0 V, TA = 25°C, f = 1.0 MHz, VCC = +5.0 V 3
Input Capacitance (CS, SK, DI, ORG) CIN 5 pF VIN = 0 V, TA = 25°C, f = 1.0 MHz, VCC = +5.0 V 3
CS Setup Time tCSS 50 ns VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
CS Hold Time tCSH 0 ns VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
DI Setup Time tDIS 100 ns VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
DI Hold Time tDIH 100 ns VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Output Delay to 1 tPD1 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Output Delay to 0 tPD0 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Output Delay to High-Z tHZ 100 ns VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Program/Erase Pulse Width tEW 5 ms VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Minimum CS Low Time tCSMIN 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Minimum SK High Time tSKHI 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Minimum SK Low Time tSKLOW 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Output Delay to Status Valid tSV 0.25 µs VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Maximum Clock Frequency SKMAX 2000 kHz VCC = +1.8 V to +5.5 V, TA = −40°C to +85°C 3
Power-up to Read Operation tPUR 1 ms Delay from time VCC is stable 3
Power-up to Write Operation tPUW 1 ms Delay from time VCC is stable 3
Supply Voltage (VCC) VCC 1.8 5.5 V Operating range stated in D.C. and A.C. characteristics headers 2
Ambient Operating Temperature (Industrial) TA -40 85 °C Industrial temperature range stated in D.C. and A.C. characteristics headers 2

CAD (KiCad official)

  • Symbol: CAT93C66VI-GT3
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: cat93c66vi-gt3-etched.step / cat93c66vi-gt3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cat93c66vi-gt3.step / cat93c66vi-gt3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 c06943f5dd77ad14, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF