# CAT811RTBI-GT3-HXY

**HXY MOSFET** · Supervisor And Reset ICs · SOT-143

CAT811RTBI-GT3-HXY from HXY MOSFET, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground reference pin for the device. |
| 2 | RESET | output | Push-pull output that is pulled low when VIN is below the detect level and pushed high when VIN is above the detect level for 240ms. |
| 3 | MR | input | Manual reset input with logic thresholds of VIH at 0.7xVIN minimum and VIL at 0.3xVIN maximum. |
| 4 | VIN | power_in | Power input and the voltage node to be monitored, with an input voltage range of 1 to 6 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-143 |
| Category | Power Management (PMIC) |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage range | VIN | -0.3 |  | 8 | V |  | 2 |
| Input voltage range | VIN | 1 |  | 6 | V |  | 3 |
| Quiescent current | IQ | 3 | 5 | 10 | µA | VIN = 3.6V, TA=25°C | 3 |
| Quiescent current | IQ | 2 | 3.5 | 10 | µA | VIN = 3.6V, TA=-40°C | 3 |
| Quiescent current | IQ | 4 | 6.3 | 15 | µA | VIN = 3.6V, TA=125°C | 3 |
| Detecting voltage level | VDET | 2.564 | 2.63 | 2.696 | V | VDET = 2.63V | 3 |
| Delay time |  | 150 | 240 | 560 | ms | TA = -40°C to 85°C | 3 |
| Reset falling delay |  |  | 2 | 50 | µs | VIN falling below VDET | 3 |
| Reset output low voltage | VOL | 0 | 0.03 | 0.3 | V | ISINK = 1.2mA, VIN=2V | 3 |
| Lead temperature |  |  |  | 260 | °C |  | 2 |
| Output voltage RESET | VRESET | -0.3 |  |  | V | upper limit printed as VIN+0.3 V | 2 |
| Junction temperature | TJ | -40 |  | 125 | °C |  | 2 |
| Continuous power dissipation | PD |  |  | 0.3 | W |  | 2 |
| Storage temperature range | TSTG | -65 |  | 150 | °C |  | 2 |
| Thermal resistance, junction-to-ambient | θJA |  | 280 |  | °C/W |  | 2 |
| Thermal resistance, junction-case | θJC |  | 90 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `CAT811RTBI-GT3-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-143`
- 3D model: SOT-143 (KiCad packages3D, STEP)
- 3D model files: `cat811rtbi-gt3-hxy-etched.step` / `cat811rtbi-gt3-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cat811rtbi-gt3-hxy.step` / `cat811rtbi-gt3-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/cat811rtbi-gt3-hxy-datasheet.pdf) (5 pp, sha256 `2f8088f223f3d88e`, retrieved 2026-11-02, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cat811rtbi-gt3-hxy-datasheet.pdf)