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CA3140EZ-HXY

HXY MOSFET · Operational Amplifier · DIP-8

CA3140EZ-HXY from HXY MOSFET, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OA1 passive Offset null terminal used to null the input offset voltage, with no limits stated in the datasheet for this pin.
2 IN- input Inverting input of the operational amplifier; the datasheet gives a MOSFET (PMOS) input stage with very high input impedance (1.5TΩ typ) and very low input current (-10pA typ at ±15V).
3 IN+ input Noninverting input of the operational amplifier; the datasheet gives a wide common mode input voltage range of -15V to 12V.
4 V- power_in Negative power supply terminal; the datasheet tests supplies from ±5V to ±15V (PSRR test condition).
5 OA2 passive Offset null terminal used to null the input offset voltage, with no limits stated in the datasheet for this pin.
6 OUT output Amplifier output, with a stated output voltage swing of -14V to 12V (VOPP, RL = 2kΩ).
7 V+ power_in Positive power supply terminal; the datasheet tests supplies from ±5V to ±15V (PSRR test condition).
8 ST input Strobe terminal; the datasheet specifies a sink current of at least 160 µA from terminal 8 to V-.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DIP-8
Category Amplifiers/Comparators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Offset Voltage /VIO/ 5 6.5 mV TA=25°C 4
Input Offset Voltage Temperature Drift /αVIO/ 24 μV/°C 4
Input Offset Current /IIO/ 20 1000 pA TA=25°C 4
Input Bias Current /IIB/ 40 1500 pA TA=25°C 4
Open Loop Voltage Gain AVO 80 86 dB VO=-14V~12V, RL=2kΩ, TA=25°C 4
Common Mode Rejection Ratio KCMR 64 70 dB VCM=-14V~11V, TA=25°C 4
Power Supply Rejection Ratio KSVR 70 76 dB VS=±5V~±15V, TA=25°C 4
Output Voltage Peak (positive) VOPP+ 11.5 12 V RL=2kΩ, TA=25°C 4
Output Voltage Peak (negative) VOPP- -13.5 -14 V RL=2kΩ, TA=25°C 4
Sink Current (Terminal 8) ISINK8 160 μA Terminal 8 to V-, TA=25°C 4
Supply Current IS 6 mA VS=±15V, RL=∞ 4
Gain-Bandwidth Product GBW 3.5 MHz RL=2kΩ, TA=25°C 4
Slew Rate SR 6 V/μs RL=2kΩ, TA=25°C 4
Operating Temperature Range -40 85 °C 1

CAD (KiCad official)

  • Symbol: CA3140EZ-HXY
  • Footprint: Package_DIP:DIP-8_W7.62mm
  • 3D model: DIP-8 (KiCad packages3D, STEP)
  • 3D model files: ca3140ez-hxy-etched.step / ca3140ez-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ca3140ez-hxy.step / ca3140ez-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 1c770ef99432d299, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF