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C3M0060065K

Wolfspeed · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4

C3M0060065K from Wolfspeed, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal (Pin 1, TAB) of the MOSFET, rated for VDSS 650 V at TC = 25 ˚C.
2 S passive Power source terminal (Pin 2) of the MOSFET, carrying the main drain current; the datasheet gives no separate electrical limit for this pin.
3 S passive Driver source terminal (Pin 3), separated from the power source so the gate drive return does not share the power loop; the datasheet gives no separate electrical limit for this pin.
4 Gate input Gate terminal (Pin 4); recommended turn-on voltage is 15 V and recommended turn-off voltage is -4 V, with transient VGS limited to -8/+19 V under events shorter than 100 ns.

Key specifications

Parameter Value
Manufacturer Wolfspeed
Package TO-247-4
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.3 3.6 V VDS = VGS, ID = 5 mA 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 42 60 79 mΩ VGS = 15 V, ID = 13.2 A 2
Drain-Source On-State Resistance, TJ = 175ºC RDS(on) 80 mΩ VGS = 15 V, ID = 13.2 A, TJ = 175ºC 2
Drain - Source Voltage VDSS 650 V TC = 25 ˚C 1
Gate - Source voltage (transient < 100 ns) VGS -8 19 V Under transient events < 100 ns 1
Continuous Drain Current ID 37 A VGS = 15 V, TC = 25˚C 1
Continuous Drain Current ID 27 A VGS = 15 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 99 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 150 W TC=25˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Continuous Diode Forward Current IS 23 A VGS = -4 V, TC = 25˚C 3
Diode pulse Current IS, pulse 99 A VGS = -4 V, pulse width tP limited by Tjmax 3
Gate-Source Recommended Turn-On Voltage VGSon 15 V 2
Gate-Source Recommended Turn-Off Voltage VGSoff -4 V 2
Thermal Resistance from Junction to Case RθJC 0.99 °C/W 3
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 3
Gate Threshold Voltage, TJ = 175ºC VGS(th) 1.9 V VDS = VGS, ID = 5 mA, TJ = 175ºC 2
Transconductance gfs 10 S VDS= 20 V, IDS= 13.2 A 2
Input Capacitance Ciss 1020 pF VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV 2
Output Capacitance Coss 80 pF VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV 2
Reverse Transfer Capacitance Crss 9 pF VGS = 0 V, VDS = 600 V, f = 1 MHz, VAC = 25 mV 2
Internal Gate Resistance RG(int) 3 Ω f = 1 MHz, VAC = 25 mV 2
Total Gate Charge Qg 46 nC VDS = 400 V, VGS = -4 V/15 V, ID = 13.2 A 2
Diode Forward Voltage VSD 5.1 V VGS = -4 V, ISD = 6.6 A, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: C3M0060065K
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: c3m0060065k-etched.step / c3m0060065k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); c3m0060065k.step / c3m0060065k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wolfspeed datasheet (12 pp, sha256 f66e6b62a5279269, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF