C3M0021120K

{
  "schema_version": 1,
  "type": "component",
  "slug": "c3m0021120k",
  "title": "C3M0021120K",
  "brief": "Wolfspeed Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "silicon carbide (sic) devices",
    "c3m0021120k"
  ],
  "component": {
    "mpn": "C3M0021120K",
    "manufacturer": "Wolfspeed",
    "package": "TO-247-4",
    "pin_count": 5,
    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603168924103942144",
    "parts": {
      "symbol": "c3m0021120k.kicad_sym",
      "footprint": "c3m0021120k.kicad_mod",
      "model_3d": "c3m0021120k-etched.glb",
      "model_3d_plain": "c3m0021120k.glb",
      "model_3d_step": "c3m0021120k-etched.step",
      "model_3d_step_plain": "c3m0021120k.step",
      "lbr": "c3m0021120k.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "D",
        "type": "passive",
        "description": "Drain. 1200 V max drain-source voltage (V_DS_max). Continuous drain current 100 A at T_C=25°C (74 A at T_C=100°C). Electrically connected to the tab (pin 5) for heatsinking. R_DS(on) typ 21 mΩ at V_GS=15 V, I_D=50 A."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Power Source (main power current path). Carries the drain-source current back to the load; typically bonded to the high-current source terminal. Should not be used as the gate-driver return in this 4-lead package (use pin 3 for that)."
      },
      {
        "number": "3",
        "name": "SS",
        "type": "passive",
        "description": "Driver Source (Kelvin source). Low-inductance sense connection to the source used as the gate-driver return reference to eliminate common-source inductance and reduce switching losses / gate ringing."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate. Recommended drive V_GS = -4 V / +15 V (V_GS_max dynamic -8/+19 V, static -4/+15 V). Gate threshold V_GS(th) typ 2.5 V. Total gate charge Q_g typ 162 nC; internal gate resistance R_G(int) typ 3.3 Ω."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain (metal tab). Same net as pin 1; provides the thermal / mechanical mounting surface (R_θJC typ 0.32 °C/W). Must be treated as electrically live at drain potential (up to 1200 V)."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603168924103942144",
        "pages": 12,
        "sha256": "cdd5e1f0529f7383",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 5,
        "described": 5,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.414,
        "footprint_binding": "identity",
        "sha256": "976ae560ee073c7450ef39d3d2fc3006e5eed9c51132093905f3e98066a0fc8d",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "c3m0021120k-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          15.9,
          5.03,
          41.1
        ],
        "zmin_mm": -15.83,
        "centre_offset_mm": 0.414,
        "footprint_binding": "identity",
        "sha256": "5c2696e492ef360bad44d8704ef356ad284e3f05cbcabb6f3c1ed87604f5ba14",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Wolfspeed",
      "Package": "TO-247-4",
      "Category": "Silicon Carbide (SiC) Devices",
      "Pins": "5"
    }
  },
  "variants": [
    {
      "mpn": "C3M0021120K",
      "kind": "packaging"
    }
  ],
  "sections": [
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  "discovery_triggers": [
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  "discovery_pitch": "C3M0021120K (Wolfspeed) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
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    "path": "docs/hero.png"
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  "files": [
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    "c3m0021120k.kicad_sym",
    "c3m0021120k.kicad_mod",
    "c3m0021120k.glb",
    "c3m0021120k.step",
    "c3m0021120k.lbr",
    "docs/hero.png",
    "docs/c3m0021120k-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
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  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T18:22:28.764Z"
}