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Contents

README

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C3M0015065K

Wolfspeed · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4

C3M0015065K from Wolfspeed, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal, also the metal tab; the device is rated for VDSmax of 650 V.
2 Power Source power_in Main power source terminal for the high-current path, separated from the driver source pin as a stated feature of this package.
3 Driver Source power_in Separate driver source terminal for the gate drive return, as stated in the datasheet's package feature list.
4 Gate input Gate input; recommended turn-off/turn-on gate voltage is VGS -4V...0V / +15V, with VGSmax of -8/+19 V.

Key specifications

Parameter Value
Manufacturer Wolfspeed
Package TO-247-4
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSmax 650 V 1
Gate-Source Voltage VGSmax -8 19 V Note 1 1
Continuous Drain Current ID 120 A VGS = 15 V, TC = 25 ˚C 1
Continuous Drain Current ID 96 A VGS = 15 V, TC = 100 ˚C 1
Pulsed Drain Current ID(pulse) 418 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 416 W TC=25 ˚C, TJ = 175 ˚C 1
Operating Junction and Storage Temperature TJ, Tstg -40 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Recommended turn-off gate voltage VGS -4 0 V Recommended turn off gate voltage, Note (1) 1
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0 V, ID = 100 μA 2
Gate Threshold Voltage VGS(th) 1.8 2.3 3.6 V VDS = VGS, ID = 15.5 mA 2
Zero Gate Voltage Drain Current IDSS 1 50 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V 2
Drain-Source On-State Resistance RDS(on) 10.5 15 21 mΩ VGS = 15 V, ID = 55.8A 2
Drain-Source On-State Resistance at TJ = 175 ºC RDS(on) 20 mΩ VGS = 15 V, ID = 55.8A, TJ = 175ºC 2
Recommended turn-on gate voltage VGS 15 V Recommended turn on gate voltage, Note (1) 1
Thermal Resistance from Junction to Case RθJC 0.35 °C/W Fig. 21 3
Thermal Resistance From Junction to Ambient RθJA 40 °C/W 3

CAD (KiCad official)

  • Symbol: C3M0015065K
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: c3m0015065k-etched.step / c3m0015065k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); c3m0015065k.step / c3m0015065k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wolfspeed datasheet (12 pp, sha256 17f85f0108ff36c0, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF