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Ray Publish 0.1.0 455ceea 16d ago

C2M1000170D

FUXINSEMI · MOSFETs · TO-247-3

C2M1000170D from FUXINSEMI, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; recommended operating drive is -5/+20 V and absolute maximum is -10/+25 V relative to source.
2 D passive Drain; blocks up to 1700 V VDS and carries 5.0 A continuous at 25 °C (15 A pulsed).
3 S passive Source; power return terminal of the MOSFET, with the body diode connected from source to drain.

Key specifications

Parameter Value
Manufacturer FUXINSEMI
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: C2M1000170D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: c2m1000170d-etched.step / c2m1000170d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); c2m1000170d.step / c2m1000170d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FUXINSEMI datasheet (9 pp, sha256 16f318d1db54557b, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF