component
C1815 120~240-TA
Public Made by Adomby adom
Changjiang Electronics Tech (CJ) Bipolar Transistors - BJT, TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
Ray
Publish 0.1.0
8f29391
C1815 120~240-TA
Changjiang Electronics Tech (CJ) · Bipolar Transistors - BJT · TO-92
C1815 120~240-TA from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives a maximum emitter-base voltage VEBO of 5 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives a maximum collector-emitter voltage VCEO of 50 V and continuous collector current IC of 150 mA. |
| 3 | BASE | input | Base terminal of the NPN transistor that controls the device; the datasheet gives a maximum collector-base voltage VCBO of 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC= 100uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC= 0.1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE= 100uA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | uA | VCB= 60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 | 1 | ||
| DC current gain (rank Y, 120-240) | hFE | 120 | 240 | VCE= 6 V, IC= 2mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=100mA, IB=10mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=100mA, IB=10mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE=10 V, IC= 1mA, f=30MHz | 1 | ||
| Collector output capacitance | Cob | 3.5 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Noise figure | NF | 10 | dB | VCE=6V, IC=0.1mA, f=1KHz, RG=10K | 1 | ||
| Collector-base voltage | VCBO | 60 | V | 1 | |||
| Collector-emitter voltage | VCEO | 50 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 150 | mA | 1 | |||
| Collector power dissipation | PC | 400 | mW | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 312 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
C1815 120~240-TA - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
c1815-120-240-ta-etched.step/c1815-120-240-ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);c1815-120-240-ta.step/c1815-120-240-ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjiang Electronics Tech (CJ) datasheet (2 pp, sha256
ee68fd79ceafdf7e, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# C1815 120~240-TA
**Changjiang Electronics Tech (CJ)** · Bipolar Transistors - BJT · TO-92
C1815 120~240-TA from Changjiang Electronics Tech (CJ), in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives a maximum emitter-base voltage VEBO of 5 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives a maximum collector-emitter voltage VCEO of 50 V and continuous collector current IC of 150 mA. |
| 3 | BASE | input | Base terminal of the NPN transistor that controls the device; the datasheet gives a maximum collector-base voltage VCBO of 60 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjiang Electronics Tech (CJ) |
| Package | TO-92 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | | | V | IC= 100uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | | | V | IC= 0.1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE= 100uA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | 0.1 | uA | VCB= 60V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 0.1 | uA | VEB=5V, IC=0 | 1 |
| DC current gain (rank Y, 120-240) | hFE | 120 | | 240 | | VCE= 6 V, IC= 2mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.25 | V | IC=100mA, IB=10mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | | | 1 | V | IC=100mA, IB=10mA | 1 |
| Transition frequency | fT | 80 | | | MHz | VCE=10 V, IC= 1mA, f=30MHz | 1 |
| Collector output capacitance | Cob | | | 3.5 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Noise figure | NF | | | 10 | dB | VCE=6V, IC=0.1mA, f=1KHz, RG=10K | 1 |
| Collector-base voltage | VCBO | | | 60 | V | | 1 |
| Collector-emitter voltage | VCEO | | | 50 | V | | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | | 1 |
| Collector current, continuous | IC | | | 150 | mA | | 1 |
| Collector power dissipation | PC | | | 400 | mW | | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance from junction to ambient | RθJA | | 312 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `C1815 120~240-TA`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `c1815-120-240-ta-etched.step` / `c1815-120-240-ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `c1815-120-240-ta.step` / `c1815-120-240-ta.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjiang Electronics Tech (CJ) datasheet](docs/c1815-120-240-ta-datasheet.pdf) (2 pp, sha256 `ee68fd79ceafdf7e`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/c1815-120-240-ta-datasheet.pdf)