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Ray Publish 0.1.0 9f94a60 11d ago

BZX84J-B9V1

Nexperia · Zener Diodes · SOD-323F

BZX84J-B9V1 from Nexperia, in a SOD-323F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 cathode passive Cathode of the Zener diode, identified by the marking bar on the package; the datasheet gives a forward current limit of 250 mA (IF, Table 5) for the device.
2 anode passive Anode of the Zener diode; the device has a total power dissipation limit of 550 mW at Tamb ≤ 25 °C (Ptot, Table 5) and a junction temperature limit of 150 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOD-323F
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Working voltage (Zener voltage), minimum VZ 8.92 V IZ = 5 mA; Tj = 25 °C unless otherwise specified 4
Working voltage (Zener voltage), maximum VZ 9.28 V IZ = 5 mA; Tj = 25 °C unless otherwise specified 4
Differential resistance, maximum rdif 100 Ω 4
Reverse current, maximum (first IR column) IR 10 µA 4
Reverse current, maximum (second IR column) IR 0.5 µA 4
Temperature coefficient, minimum SZ 3.8 mV/K IZ = 5 mA 4
Temperature coefficient, maximum SZ 7 mV/K IZ = 5 mA 4
Diode capacitance, maximum Cd 120 pF f = 1 MHz; VR = 0 V 4
Non-repetitive peak reverse current, maximum IZSM 3 A tp = 100 µs; square wave; Tj = 25 °C prior to surge 4
Forward current, maximum IF 250 mA 3
Non-repetitive peak reverse power dissipation, maximum PZSM 40 W tp = 100 µs; square wave; Tj = 25 °C prior to surge 3
Total power dissipation, maximum Ptot 550 mW Tamb ≤ 25 °C; device mounted on FR4 PCB, mounting pad for cathode 1 cm² 3
Junction temperature, maximum Tj 150 °C 3
Ambient temperature range Tamb -55 150 °C 3
Storage temperature range Tstg -65 150 °C 3
Forward voltage, maximum VF 0.9 V IF = 10 mA; pulse test tp ≤ 300 µs, δ ≤ 0.02 3
Forward voltage, maximum VF 1.1 V IF = 100 mA; pulse test tp ≤ 300 µs, δ ≤ 0.02 3
Thermal resistance, junction to ambient, maximum Rth(j-a) 230 K/W in free air; device mounted on FR4 PCB, mounting pad for cathode 1 cm² 3
Thermal resistance, junction to solder point, maximum Rth(j-sp) 55 K/W soldering point of cathode tab 3

CAD (KiCad official)

  • Symbol: BZX84J-B9V1
  • Footprint: Diode_SMD:D_SOD-323F
  • 3D model: SOD-323F (KiCad packages3D, STEP)
  • 3D model files: bzx84j-b9v1-etched.step / bzx84j-b9v1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bzx84j-b9v1.step / bzx84j-b9v1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 fcfb79c5f982558d, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF