component
BZX8450-C3V0-QR
Public Made by Adomby adom
Nexperia Zener Diodes, TO-236AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1d ago |
| viewers | 1d ago |
| bzx8450-c3v0-qr-etched.glb | 1d ago |
| bzx8450-c3v0-qr-etched.step | 1d ago |
| bzx8450-c3v0-qr-hero.glb | 1d ago |
| bzx8450-c3v0-qr-hero.overlay.json | 1d ago |
| bzx8450-c3v0-qr.glb | 1d ago |
| bzx8450-c3v0-qr.kicad_mod | 1d ago |
| bzx8450-c3v0-qr.kicad_sym | 1d ago |
| bzx8450-c3v0-qr.lbr | 1d ago |
| bzx8450-c3v0-qr.step | 1d ago |
| package.json | 1d ago |
| page.json | 1d ago |
| README.md | 1d ago |
BZX8450-C3V0-QR
Nexperia · Zener Diodes · TO-236AB
BZX8450-C3V0-QR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the voltage regulator diode. |
| 2 | n.c. | unconnected | Not connected. |
| 3 | K | passive | Cathode of the voltage regulator diode; solder point of the cathode tab has Rth(j-sp) max 330 K/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TO-236AB |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Working voltage | VZ | 2.85 | 3.15 | V | IZ = 50 µA, Tj = 25 °C | 4 | |
| Differential resistance | rdiff | 600 | Ω | IZ = 50 µA, Tj = 25 °C | 4 | ||
| Differential resistance | rdiff | 100 | Ω | IZ = 1 mA, Tj = 25 °C | 4 | ||
| Differential resistance | rdiff | 0.8 | Ω | IZ = 5 mA, Tj = 25 °C | 4 | ||
| Reverse current | IR | 1 | µA | Tj = 25 °C | 4 | ||
| Reverse voltage for IR test | VR | 1 | V | Tj = 25 °C | 4 | ||
| Temperature coefficient of working voltage | SZ | -3.5 | 0.2 | mV/K | IZ = 5 mA, Tj = 25 °C | 4 | |
| Diode capacitance | Cd | 170 | pF | f = 1 MHz; VR = 0 V | 4 | ||
| Forward voltage | VF | 0.9 | V | IF = 10 mA; pulse test: tp ≤ 300 μs; δ ≤ 0.02 | 4 | ||
| Forward current | IF | 200 | mA | 3 | |||
| Non-repetitive peak reverse power dissipation | PZSM | 40 | W | tp = 100 µs; square wave; Tj = 25 °C; prior to surge | 3 | ||
| Total power dissipation | Ptot | 250 | mW | Tamb ≤ 25 °C | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | in free air | 3 | ||
| Thermal resistance from junction to solder point | Rth(j-sp) | 330 | K/W | 3 |
CAD (KiCad official)
- Symbol:
BZX8450-C3V0-QR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236AB (KiCad packages3D, STEP)
- 3D model files:
bzx8450-c3v0-qr-etched.step/bzx8450-c3v0-qr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bzx8450-c3v0-qr.step/bzx8450-c3v0-qr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (10 pp, sha256
c4eaf3bb5a88aca0, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).