component

BZW06-33

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by adom

STMicroelectronics TVS, DO-15. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttvs-fuse-board level protectionbzw06-33factory-2.0.0extractor-text
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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BZW06-33

STMicroelectronics · TVS · DO-15

BZW06-33 from STMicroelectronics, in a DO-15. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode, identified by the cathode band on the unidirectional BZW06-33; stand-off voltage VRM 33 V with max 0.2 µA leakage, minimum breakdown VBR 37.1 V at 1 mA, and max clamping VCL 53.9 V at 11.1 A (10/1000 µs).
2 A passive Anode of the unidirectional BZW06-33 TVS diode, which clamps overvoltage with 600 W peak pulse power (10/1000 µs) and 100 A non-repetitive surge forward current (10 ms).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DO-15
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Stand-off voltage (reverse working) VRM 33 V Tamb = 25 °C 3
Breakdown voltage VBR 37.1 V at IR = 1 mA, Tamb = 25 °C; pulse test tp < 50 ms 3
Leakage current IRM 0.2 µA at VRM, Tamb = 25 °C 3
Clamping voltage 10/1000 µs VCL 53.9 V at IPP = 11.1 A, 10/1000 µs 3
Clamping voltage 8/20 µs VCL 69.7 V at IPP = 57 A, 8/20 µs 3
Peak pulse power Ppp 600 W Tj initial = Tamb, 10/1000 µs 2
Power dissipation on infinite heatsink P 1.7 W Tamb = 75 °C 2
Non repetitive surge peak forward current IFSM 100 A tp = 10 ms, Tj initial = Tamb 2
Storage junction temperature range Tstg -65 175 °C 2
Operating junction temperature range Tj -55 175 °C 2
Maximum soldering temperature TL 260 °C during 10 s at 5 mm from case 2
Thermal resistance junction to leads Rth(j-l) 60 °C/W 2
Thermal resistance junction to ambient Rth(j-a) 100 °C/W on printed circuit, Llead = 10 mm 2
Voltage temperature coefficient αT 10 10-4/°C Tamb = 25 °C 3
Junction capacitance C 900 pF VR = 0 V, F = 1 MHz 3

CAD (KiCad official)

  • Symbol: BZW06-33
  • Footprint: Diode_THT:D_DO-15_P12.70mm_Horizontal
  • 3D model: DO-15 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 029ab6d1c5473858, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF