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Contents

README

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BZV49-C18

Nexperia · Zener Diodes · SOT-89-3

BZV49-C18 from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 anode passive Anode of the BZV49-C18 voltage regulator diode; total device power dissipation is limited to max. 1 W at Tamb = 25 °C (device mounted on a ceramic substrate of 2.5 cm²).
2 cathode passive Cathode of the voltage regulator diode, which is also the collector pad for heat transfer on the SOT89 package; storage temperature is −65 to +150 °C and junction temperature is max. 150 °C.
3 anode passive Anode of the BZV49-C18 voltage regulator diode; non-repetitive peak reverse power dissipation is max. 40 W for tp = 100 µs at Tj = 25 °C prior to surge.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Working voltage (nominal typ; VZ min/max at IZtest) VZ 16.8 18 19.1 V IZtest = 5 mA 5
Working voltage tolerance (E24 series) -5 5 % Series tolerance, stated as approx. 3
Differential resistance rdif 10 45 Ω at IZtest = 5 mA 5
Temperature coefficient SZ 12.4 14.4 16 mV/K at IZtest = 5 mA; see Figs 4 and 5 5
Diode capacitance Cd 70 pF f = 1 MHz; VR = 0 V 5
Reverse current IR 0.05 μA VR = 12.6 V 5
Non-repetitive peak reverse current IZSM 1.5 A tp = 100 μs; square wave; Tj = 25 °C prior to surge; Tamb = 25 °C 5
Continuous forward current IF 250 mA 4
Total power dissipation Ptot 1 W Tamb = 25 °C; note 1 4
Non-repetitive peak reverse power dissipation PZSM 40 W tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 4
Storage temperature Tstg -65 150 °C 4
Junction temperature Tj 150 °C 4
Forward voltage VF 1 V IF = 50 mA; see Fig.3 4
Thermal resistance, junction to tie-point Rth(j-tp) 15 K/W 7
Thermal resistance, junction to ambient Rth(j-a) 125 K/W note 1: ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm 7

CAD (KiCad official)

  • Symbol: BZV49-C18
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89-3 (KiCad packages3D, STEP)
  • 3D model files: bzv49-c18-etched.step / bzv49-c18-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bzv49-c18.step / bzv49-c18.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (11 pp, sha256 d11cb65034cc8cae, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF