component
BZV49-C12
Public Made by Adomby adom
Nexperia Zener Diodes, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BZV49-C12
Nexperia · Zener Diodes · SOT-89-3
BZV49-C12 from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | anode | passive | Anode of the BZV49-C12 voltage regulator diode; the datasheet's device limits apply, including continuous forward current 250 mA and total power dissipation 1 W at Tamb = 25 °C (device mounted on a ceramic substrate of 2.5 cm² and 0.7 mm thickness). |
| 2 | cathode | passive | Cathode of the BZV49-C12 voltage regulator diode, the reverse-regulation terminal; the BZV49-C12 nominal working voltage is 12 V with VZ 11.4 V min to 12.7 V max at IZtest 5 mA (page 5). |
| 3 | anode | passive | Second anode terminal of the SOT89 package; the datasheet's device limits apply, including non-repetitive peak reverse power dissipation PZSM max. 40 W (tp = 100 µs, Tj = 25 °C prior to surge). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Working voltage VZ (min) | VZ | 11.4 | V | at IZtest = 5 mA | 5 | ||
| Working voltage VZ (max) | VZ | 12.7 | V | at IZtest = 5 mA | 5 | ||
| Differential resistance rdif (max) | rdif | 10 | 25 | Ω | at IZtest = 5 mA | 5 | |
| Temperature coefficient SZ | SZ | 6 | 8.4 | 10 | mV/K | at IZtest = 5 mA; see Figs 4 and 5 | 5 |
| Diode capacitance Cd (max) | Cd | 85 | pF | f = 1 MHz; VR = 0 V | 5 | ||
| Reverse current IR (max) | IR | 0.1 | μA | at VR = 8.0 V | 5 | ||
| Non-repetitive peak reverse current IZSM (max) | IZSM | 2.5 | A | tp = 100 μs; square wave; Tj = 25 °C prior to surge; Tamb = 25 °C | 5 | ||
| Continuous forward current | IF | 250 | mA | 3 | |||
| Total power dissipation | Ptot | 1 | W | Tamb = 25 °C; note 1 | 3 | ||
| Non-repetitive peak reverse power dissipation | PZSM | 40 | W | tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Forward voltage | VF | 1 | V | IF = 50 mA; see Fig.3 | 4 | ||
| Thermal resistance junction to tie-point | Rth(j-tp) | 15 | K/W | 7 | |||
| Thermal resistance junction to ambient | Rth(j-a) | 125 | K/W | note 1: device mounted on ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm | 7 |
CAD (KiCad official)
- Symbol:
BZV49-C12 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files:
bzv49-c12-etched.step/bzv49-c12-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bzv49-c12.step/bzv49-c12.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (11 pp, sha256
d11cb65034cc8cae, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BZV49-C12
**Nexperia** · Zener Diodes · SOT-89-3
BZV49-C12 from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | anode | passive | Anode of the BZV49-C12 voltage regulator diode; the datasheet's device limits apply, including continuous forward current 250 mA and total power dissipation 1 W at Tamb = 25 °C (device mounted on a ceramic substrate of 2.5 cm² and 0.7 mm thickness). |
| 2 | cathode | passive | Cathode of the BZV49-C12 voltage regulator diode, the reverse-regulation terminal; the BZV49-C12 nominal working voltage is 12 V with VZ 11.4 V min to 12.7 V max at IZtest 5 mA (page 5). |
| 3 | anode | passive | Second anode terminal of the SOT89 package; the datasheet's device limits apply, including non-repetitive peak reverse power dissipation PZSM max. 40 W (tp = 100 µs, Tj = 25 °C prior to surge). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Working voltage VZ (min) | VZ | 11.4 | | | V | at IZtest = 5 mA | 5 |
| Working voltage VZ (max) | VZ | | | 12.7 | V | at IZtest = 5 mA | 5 |
| Differential resistance rdif (max) | rdif | | 10 | 25 | Ω | at IZtest = 5 mA | 5 |
| Temperature coefficient SZ | SZ | 6 | 8.4 | 10 | mV/K | at IZtest = 5 mA; see Figs 4 and 5 | 5 |
| Diode capacitance Cd (max) | Cd | | | 85 | pF | f = 1 MHz; VR = 0 V | 5 |
| Reverse current IR (max) | IR | | | 0.1 | μA | at VR = 8.0 V | 5 |
| Non-repetitive peak reverse current IZSM (max) | IZSM | | | 2.5 | A | tp = 100 μs; square wave; Tj = 25 °C prior to surge; Tamb = 25 °C | 5 |
| Continuous forward current | IF | | | 250 | mA | | 3 |
| Total power dissipation | Ptot | | | 1 | W | Tamb = 25 °C; note 1 | 3 |
| Non-repetitive peak reverse power dissipation | PZSM | | | 40 | W | tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.2 | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Forward voltage | VF | | | 1 | V | IF = 50 mA; see Fig.3 | 4 |
| Thermal resistance junction to tie-point | Rth(j-tp) | | | 15 | K/W | | 7 |
| Thermal resistance junction to ambient | Rth(j-a) | | | 125 | K/W | note 1: device mounted on ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm | 7 |
## CAD (KiCad official)
- Symbol: `BZV49-C12`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files: `bzv49-c12-etched.step` / `bzv49-c12-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bzv49-c12.step` / `bzv49-c12.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588915600915091456) (11 pp, sha256 `d11cb65034cc8cae`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bzv49-c12-datasheet.pdf)