component
BZT55C10-GS08
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Vishay Intertech Zener Diodes, SOD-80. Diode: pin 1 is the cathode (the banded end) by the KiCad diode-footprint convention, KiCad symbol/footprint/3D.
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BZT55C10-GS08
Vishay Intertech · Zener Diodes · SOD-80
BZT55C10-GS08 from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage VZ (BZT55C10) | VZ | 9.4 | 10 | 10.6 | V | IZT1 = 5 mA; tp ≤ 10 ms, T/tp > 1000 (note 1) | 2 |
| Reverse leakage current IR at 25 °C (BZT55C10) | IR | 0.1 | μA | VR = 7.5 V; Tamb = 25 °C | 2 | ||
| Reverse leakage current IR at 150 °C (BZT55C10) | IR | 2 | μA | VR = 7.5 V; Tamb = 150 °C | 2 | ||
| Reverse leakage current, additional measurement (voltage group 9V1 to 75) | IR | 35 | nA | 95 % VZmin; Tj = 25 °C | 2 | ||
| Dynamic resistance ZZ at IZT1 (BZT55C10) | ZZ | 15 | Ω | IZT1 = 5 mA; f = 1 kHz | 2 | ||
| Dynamic resistance ZZK at IZT2 (BZT55C10) | ZZK | 70 | Ω | IZT2 = 1 mA | 2 | ||
| Temperature coefficient of VZ (BZT55C10) | TKVZ | 0.03 | 0.1 | %/K | 2 | ||
| Forward voltage (max.) | VF | 1.5 | V | IF = 200 mA | 1 | ||
| Power dissipation | Ptot | 500 | mW | RthJA ≤ 300 K/W | 1 | ||
| Junction temperature | Tj | 175 | °C | 1 | |||
| Storage temperature range | Tstg | -65 | 175 | °C | 1 | ||
| Junction to ambient air (thermal resistance) | RthJA | 500 | K/W | On PC board 50 mm x 50 mm x 1.6 mm | 1 |
CAD (KiCad official)
- Symbol:
BZT55C10-GS08 - Footprint:
Diode_SMD:D_MiniMELF - 3D model: SOD-80 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
a976b53351edbb99, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BZT55C10-GS08
**Vishay Intertech** · Zener Diodes · SOD-80
BZT55C10-GS08 from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage VZ (BZT55C10) | VZ | 9.4 | 10 | 10.6 | V | IZT1 = 5 mA; tp ≤ 10 ms, T/tp > 1000 (note 1) | 2 |
| Reverse leakage current IR at 25 °C (BZT55C10) | IR | | | 0.1 | μA | VR = 7.5 V; Tamb = 25 °C | 2 |
| Reverse leakage current IR at 150 °C (BZT55C10) | IR | | | 2 | μA | VR = 7.5 V; Tamb = 150 °C | 2 |
| Reverse leakage current, additional measurement (voltage group 9V1 to 75) | IR | | | 35 | nA | 95 % VZmin; Tj = 25 °C | 2 |
| Dynamic resistance ZZ at IZT1 (BZT55C10) | ZZ | | | 15 | Ω | IZT1 = 5 mA; f = 1 kHz | 2 |
| Dynamic resistance ZZK at IZT2 (BZT55C10) | ZZK | | | 70 | Ω | IZT2 = 1 mA | 2 |
| Temperature coefficient of VZ (BZT55C10) | TKVZ | 0.03 | | 0.1 | %/K | | 2 |
| Forward voltage (max.) | VF | | | 1.5 | V | IF = 200 mA | 1 |
| Power dissipation | Ptot | | | 500 | mW | RthJA ≤ 300 K/W | 1 |
| Junction temperature | Tj | | | 175 | °C | | 1 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 1 |
| Junction to ambient air (thermal resistance) | RthJA | | 500 | | K/W | On PC board 50 mm x 50 mm x 1.6 mm | 1 |
## CAD (KiCad official)
- Symbol: `BZT55C10-GS08`
- Footprint: `Diode_SMD:D_MiniMELF`
- 3D model: SOD-80 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590233584209862657) (7 pp, sha256 `a976b53351edbb99`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bzt55c10-gs08-datasheet.pdf)