component
BZM55B3V9-TR
Public Made by Adomby adom
Vishay Intertech Zener Diodes, SOD-80. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BZM55B3V9-TR
Vishay Intertech · Zener Diodes · SOD-80
BZM55B3V9-TR from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Zener diode (marked by the cathode band on the MicroMELF body); the cathode is positive in normal reverse Zener operation, with VZ nom. 3.9 V (3.82 to 3.98 V) at IZT1 = 5 mA for the BZM55B3V9. |
| 2 | A | passive | Anode of the Zener diode; forward voltage is max. 1.5 V at IF = 200 mA and power dissipation is limited to Ptot 500 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 3.82 | 3.9 | 3.98 | V | IZT1 = 5 mA | 3 |
| Reverse leakage current at 25 °C | IR | 2 | µA | Tamb = 25 °C, VR = 1 V | 3 | ||
| Reverse leakage current at 125 °C | IR | 40 | µA | Tamb = 125 °C, VR = 1 V | 3 | ||
| Dynamic resistance | ZZ | 90 | Ω | IZT1 = 5 mA, f = 1 kHz | 3 | ||
| Dynamic resistance (knee) | ZZK | 600 | Ω | IZT2 = 1 mA, f = 1 kHz | 3 | ||
| Temperature coefficient of VZ | TKVZ | -0.08 | -0.05 | %/K | IZT1 = 5 mA | 3 | |
| Test current | IZT1 | 5 | mA | 3 | |||
| Test current (knee) | IZT2 | 1 | mA | 3 | |||
| Power dissipation | Ptot | 500 | mW | RthJA ≤ 300 K/W | 1 | ||
| Junction temperature | Tj | 175 | °C | 1 | |||
| Storage temperature range | Tstg | -65 | 175 | °C | 1 | ||
| Forward voltage | VF | 1.5 | V | IF = 200 mA | 1 | ||
| Thermal resistance junction to ambient air | RthJA | 500 | K/W | Mounted on epoxy-glass hard tissue, fig. 1 | 1 | ||
| Thermal resistance junction to tie point | RthJL | 300 | K/W | 35 μm copper clad, 0.9 mm2 copper area per electrode | 1 |
CAD (KiCad official)
- Symbol:
BZM55B3V9-TR - Footprint:
Diode_SMD:D_MiniMELF - 3D model: SOD-80 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
2cc753251a5d3b40, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BZM55B3V9-TR
**Vishay Intertech** · Zener Diodes · SOD-80
BZM55B3V9-TR from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Zener diode (marked by the cathode band on the MicroMELF body); the cathode is positive in normal reverse Zener operation, with VZ nom. 3.9 V (3.82 to 3.98 V) at IZT1 = 5 mA for the BZM55B3V9. |
| 2 | A | passive | Anode of the Zener diode; forward voltage is max. 1.5 V at IF = 200 mA and power dissipation is limited to Ptot 500 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 3.82 | 3.9 | 3.98 | V | IZT1 = 5 mA | 3 |
| Reverse leakage current at 25 °C | IR | | | 2 | µA | Tamb = 25 °C, VR = 1 V | 3 |
| Reverse leakage current at 125 °C | IR | | | 40 | µA | Tamb = 125 °C, VR = 1 V | 3 |
| Dynamic resistance | ZZ | | | 90 | Ω | IZT1 = 5 mA, f = 1 kHz | 3 |
| Dynamic resistance (knee) | ZZK | | | 600 | Ω | IZT2 = 1 mA, f = 1 kHz | 3 |
| Temperature coefficient of VZ | TKVZ | -0.08 | | -0.05 | %/K | IZT1 = 5 mA | 3 |
| Test current | IZT1 | | 5 | | mA | | 3 |
| Test current (knee) | IZT2 | | 1 | | mA | | 3 |
| Power dissipation | Ptot | | | 500 | mW | RthJA ≤ 300 K/W | 1 |
| Junction temperature | Tj | | | 175 | °C | | 1 |
| Storage temperature range | Tstg | -65 | | 175 | °C | | 1 |
| Forward voltage | VF | | | 1.5 | V | IF = 200 mA | 1 |
| Thermal resistance junction to ambient air | RthJA | | | 500 | K/W | Mounted on epoxy-glass hard tissue, fig. 1 | 1 |
| Thermal resistance junction to tie point | RthJL | | | 300 | K/W | 35 μm copper clad, 0.9 mm2 copper area per electrode | 1 |
## CAD (KiCad official)
- Symbol: `BZM55B3V9-TR`
- Footprint: `Diode_SMD:D_MiniMELF`
- 3D model: SOD-80 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](docs/bzm55b3v9-tr-datasheet.pdf) (7 pp, sha256 `2cc753251a5d3b40`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bzm55b3v9-tr-datasheet.pdf)