component
BZM55B15-TR
Public Made by Adomby adom
Vishay Intertech Zener Diodes, SOD-80. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBZM55B15-TR
Vishay Intertech · Zener Diodes · SOD-80
BZM55B15-TR from Vishay Intertech, in a SOD-80. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the Zener diode, marked by the cathode band on the MicroMELF glass body; the Zener (reverse breakdown) current flows into this terminal, with BZM55B15 VZ of 14.7 to 15.3 V at IZT1 = 5 mA. |
| 2 | A | passive | Anode of the Zener diode at the unmarked end of the MicroMELF body; forward voltage is max 1.5 V at IF = 200 mA and power dissipation is max 500 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOD-80 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Zener voltage | VZ | 14.7 | 15 | 15.3 | V | IZT1 = 5 mA, Tamb = 25 °C | 3 |
| Test current 1 | IZT1 | 5 | mA | 3 | |||
| Reverse leakage current at 25 °C | IR | 0.1 | µA | VR = 11 V, Tamb = 25 °C | 3 | ||
| Reverse leakage current at 125 °C | IR | 2 | µA | VR = 11 V, Tamb = 125 °C | 3 | ||
| Dynamic resistance | ZZ | 30 | Ω | IZT1 = 5 mA, f = 1 kHz | 3 | ||
| Dynamic resistance (knee) | ZZK | 110 | Ω | IZT2 = 1 mA, f = 1 kHz | 3 | ||
| Temperature coefficient of VZ | TKVZ | 0.03 | 0.11 | %/K | IZT1 = 5 mA | 3 | |
| Power dissipation | Ptot | 500 | mW | RthJA ≤ 300 K/W | 1 | ||
| Junction to ambient air thermal resistance | RthJA | 500 | K/W | Mounted on epoxy-glass hard tissue, fig. 1 | 1 | ||
| Junction to tie point thermal resistance | RthJL | 300 | K/W | 35 μm copper clad, 0.9 mm2 copper area per electrode | 1 | ||
| Junction temperature | Tj | 175 | °C | 1 | |||
| Storage temperature range | Tstg | -65 | 175 | °C | 1 | ||
| Forward voltage | VF | 1.5 | V | IF = 200 mA | 1 | ||
| Test current 2 | IZT2 | 1 | mA | 3 |
CAD (KiCad official)
- Symbol:
BZM55B15-TR - Footprint:
Diode_SMD:D_MiniMELF - 3D model: SOD-80 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (7 pp, sha256
2cc753251a5d3b40, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).