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BYV10X-600PQ

Public Made by Adom

by adom

WeEn Semiconductors Diodes - General Purpose, TO-220-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BYV10X-600PQ

WeEn Semiconductors · Diodes - General Purpose · TO-220-2

BYV10X-600PQ from WeEn Semiconductors, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the ultrafast diode; rated for 600 V DC reverse voltage (VR) and 10 A average forward current.
2 A passive Anode of the ultrafast diode.

Key specifications

Parameter Value
Manufacturer WeEn Semiconductors
Package TO-220-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 600 V 3
Crest working reverse voltage VRWM 600 V 3
Reverse voltage VR 600 V DC 3
Average forward current IF(AV) 10 A δ = 0.5; Th ≤ 71 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 3
Repetitive peak forward current IFRM 20 A δ = 0.5; tp = 25 µs; Th ≤ 71 °C; square-wave pulse 3
Non-repetitive peak forward current IFSM 80 A tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 4 3
Non-repetitive peak forward current IFSM 88 A tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse 3
Storage temperature Tstg -65 175 °C 3
Junction temperature Tj 175 °C 3
Forward voltage VF 1.5 2 V IF = 10 A; Tj = 25 °C; Fig. 6 6
Forward voltage VF 1.6 V IF = 10 A; Tj = 150 °C; Fig. 6 6
Reverse current IR 10 µA VR = 600 V; Tj = 25 °C 6
Reverse current IR 250 µA VR = 500 V; Tj = 150 °C 6
Reverse recovery time trr 35 50 ns IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C; Fig. 7 6
Thermal resistance junction to heatsink Rth(j-h) 7.2 K/W without heatsink compound 5
Thermal resistance junction to heatsink Rth(j-h) 5.5 K/W with heatsink compound; Fig. 5 5
RMS isolation voltage Visol(RMS) 2500 V 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free 5
Reverse recovery time trr 20 ns IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 7 6
Reverse recovery time trr 40 ns IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C; Fig. 7 6
Thermal resistance junction to ambient Rth(j-a) 55 K/W in free air 5
Isolation capacitance Cisol 10 pF from cathode to external heatsink 5

CAD (KiCad official)

  • Symbol: BYV10X-600PQ
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: byv10x-600pq-etched.step / byv10x-600pq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); byv10x-600pq.step / byv10x-600pq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WeEn Semiconductors datasheet (10 pp, sha256 9f6cd06c0adc6f84, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF