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BY25D80ASSIG

Public Made by Adom

by adom

BOYAMICRO NOR FLASH, SOP-8-208mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BY25D80ASSIG

BOYAMICRO · NOR FLASH · SOP-8-208mil

BY25D80ASSIG from BOYAMICRO, in a SOP-8-208mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 /CS input Chip Select input for the serial interface.
2 SO (IO1) bidirectional Serial Output for single bit data instructions; IO1 for Dual instructions.
3 /WP (IO2) input Write Protect input for single bit operation; listed as IO2 in the signal table.
4 VSS power_in Ground.
5 SI (IO0) bidirectional Serial Input for single bit data instructions; IO0 for Dual instructions.
6 SCLK input Serial Clock input.
7 NC unconnected No Connection.
8 VCC power_in Core and I/O power supply; VCC must be held stable within the specified VCC(min) to VCC(max) range during all operations (2.7 V to 3.6 V per the datasheet features).

Key specifications

Parameter Value
Manufacturer BOYAMICRO
Package SOP-8-208mil
Category Memory
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC -0.5 4 V 30
Voltage Applied to Any Pin VIO -0.5 4 V Relative to Ground 30
Transient Voltage on any Pin VIOT -2 2 V <20nS Transient, Relative to Ground; max printed as VCC+2.0V 30
Storage Temperature TSTG -65 150 °C 30
Electrostatic Discharge Voltage VESD -2000 2000 V Human Body Model 30
Supply Voltage (operating range) VCC 2.7 3.6 V 30
Operating Temperature (Commercial) TA 0 70 °C Commercial 30
Operating Temperature (Industrial) TA -40 85 °C Industrial 30
Minimum Pattern Data Retention Time 10 Years 150°C 30
Minimum Pattern Data Retention Time 20 Years 125°C 30
Erase/Program Endurance 100 K Cycles -40 to 85°C 30
Input Voltage Respect To VSS On I/O Pins -1 1 V Respect to VSS; max printed as VCC+1.0V 31
VCC Current -100 100 mA 31
VCC(min) To /CS Low tVSL 300 us 31
Input Leakage Current ILI -2 2 µA 32
Output Leakage Current ILO -2 2 µA 32
Standby Current ICC1 13 25 µA /CS=VCC, VIN=VCC or VSS 32
Deep Power-Down Current ICC2 2 5 µA /CS=VCC, VIN=VCC or VSS 32
Operation Current (Read) ICC3 13 18 mA SCLK=0.1VCC/0.9VCC at 108MHz, Q=Open (*1,*2,*4 I/O) 32
Operating Current (PP) ICC4 15 mA /CS=VCC 32
Operating Current (WRSR) ICC5 5 mA /CS=VCC 32
Operating Current (Sector Erase) ICC6 20 mA /CS=VCC 32
Operating Current (Block Erase) ICC7 20 mA /CS=VCC 32
Operating Current (Chip Erase) ICC8 20 mA /CS=VCC 32
Input Low Voltage VIL -0.5 0.2 V 32
Input High Voltage VIH 0.8 0.4 V 32
Output Low Voltage VOL 0.4 V IOL =100µA 32
Output High Voltage VOH -0.2 V IOH =-100µA 32
Clock Frequency (all instructions except Read Data 03H) fc 108 MHz 33
Clock Frequency (Read Data instruction 03H) fR 55 MHz 33
Serial Clock High Time tCLH 4 ns 33
Serial Clock Low Time tCLL 4 ns 33
Serial Clock Rise Time (Slew Rate) tCLCH 0.1 V/ns Note 1: tested with clock frequency lower than 50 MHz 33
Serial Clock Fall Time (Slew Rate) tCHCL 0.1 V/ns Note 1: tested with clock frequency lower than 50 MHz 33
/CS Active Setup Time tSLCH 5 ns 33
/CS Active Hold Time tCHSH 5 ns 33
/CS Not Active Setup Time tSHCH 5 ns 33
/CS Not Active Hold Time tCHSL 5 ns 33
/CS High Time (read/write) tSHSL 20 ns 34
Output Disable Time tSHQZ 6 ns 34
Output Hold Time tCLQX 0 ns 34
Data In Setup Time tDVCH 2 ns 34
Data In Hold Time tCHDX 2 ns 34
Clock Low To Output Valid tCLQV 7 ns 34
Write Protect Setup Time Before /CS Low tWHSL 20 ns 34
Write Protect Hold Time After /CS High tSHWL 100 ns 34
/CS High To Deep Power-Down Mode tDP 0.1 µs 34
/CS High To Standby Mode Without Electronic Signature Read tRES1 3 µs 34
/CS High To Standby Mode With Electronic Signature Read tRES2 1.5 µs 34
Write Status Register Cycle Time tW 2 15 ms 34
Page Programming Time tPP 0.7 2.4 ms 34
Sector Erase Time tSE 100 300 ms 34
Block Erase Time (32K Bytes) tBE 0.3 2.5 s 32K Bytes 34
Block Erase Time (64K Bytes) tBE 0.5 3 s 64K Bytes 34
Chip Erase Time tCE 8 30 s 34

CAD (KiCad official)

  • Symbol: BY25D80ASSIG
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8-208mil (KiCad packages3D, STEP)
  • 3D model files: by25d80assig-etched.step / by25d80assig-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); by25d80assig.step / by25d80assig.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BOYAMICRO datasheet (43 pp, sha256 ea22c8c05765fabe, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF