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Contents

README

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BVSS84LT1G

onsemi · MOSFETs · SOT-23

BVSS84LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; gate-to-source voltage is rated at ±20 Vdc continuous with VGS(th) of -0.9 to -2.0 Vdc.
2 Source passive Source terminal of the P-channel MOSFET; continuous source-drain diode current is rated at -0.130 A (pulsed -0.520 A).
3 Drain passive Drain terminal of the P-channel MOSFET; drain-to-source voltage is rated at 50 Vdc with continuous drain current of 130 mA (pulsed 520 mA).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 50 Vdc TJ = 25°C 1
Gate-to-Source Voltage - Continuous VGS -20 20 Vdc TJ = 25°C 1
Continuous Drain Current ID 130 mA TA = 25°C 1
Pulsed Drain Current IDM 520 mA tp ≤ 10 µs 1
Total Power Dissipation PD 225 mW TA = 25°C 1
Operating and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Lead Temperature for Soldering TL 260 °C 10 seconds 1
Thermal Resistance Junction-to-Ambient RθJA 556 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS -50 Vdc VGS = 0 Vdc, ID = -250 µAdc 2
Zero Gate Voltage Drain Current IDSS -0.1 µAdc VDS = -25 Vdc, VGS = 0 Vdc 2
Zero Gate Voltage Drain Current IDSS -15 µAdc VDS = -50 Vdc, VGS = 0 Vdc 2
Zero Gate Voltage Drain Current IDSS -60 µAdc VDS = -50 Vdc, VGS = 0 Vdc, TJ = 125°C 2
Gate-Body Leakage Current IGSS -10 10 nAdc VGS = ±20 Vdc, VDS = 0 Vdc 2
Gate-Source Threshold Voltage VGS(th) -0.9 -2 Vdc VDS = VGS, ID = -250 µA 2
Static Drain-to-Source On-Resistance RDS(on) 4.7 10 Ω VGS = -5.0 Vdc, ID = -100 mAdc 2
Transfer Admittance /yfs/ 50 mS VDS = -25 Vdc, ID = -100 mAdc, f = 1.0 kHz 2
Diode Continuous Current IS -0.13 A 2
Diode Pulsed Current ISM -0.52 A 2
Diode Forward Voltage VSD -2.2 V VGS = 0 V, IS = -130 mA 2
Input Capacitance Ciss 36 pF VDS = 5.0 Vdc 2
Output Capacitance Coss 17 pF VDS = 5.0 Vdc 2
Transfer Capacitance Crss 6.5 pF VDG = 5.0 Vdc 2
Turn-On Delay Time td(on) 3.6 ns VDD = -15 Vdc, ID = -2.5 Adc, RL = 50 Ω 2
Rise Time tr 9.7 ns 2
Turn-Off Delay Time td(off) 12 ns 2
Fall Time tf 1.7 ns 2
Gate Charge QT 2.2 nC VDD = -40 Vdc, ID = -0.5 A, VGS = -10 V 2

CAD (KiCad official)

  • Symbol: BVSS84LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bvss84lt1g-etched.step / bvss84lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bvss84lt1g.step / bvss84lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 c0fafa3e87e13fd2, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF