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Contents

README

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BUL216

STMicroelectronics · Bipolar (BJT) · TO-220

BUL216 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN power transistor; base current IB max 2 A (IBM 4 A pulsed), used to drive the device into saturation (VBE(sat) up to 1.2 V).
2 C passive Collector terminal of the NPN power transistor, internally connected to the metal mounting tab; rated for collector current IC up to 4 A (ICM 6 A pulsed) and blocking voltages up to VCES 1600 V / VCEO 800 V.
3 E passive Emitter terminal of the NPN power transistor; emitter-base voltage rated VEBO 9 V (IE = 10 mA test condition).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: BUL216
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bul216-etched.step / bul216-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bul216.step / bul216.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (6 pp, sha256 f49f41b2015a4499, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF