# BUL1102E

**STMicroelectronics** · Bipolar (BJT) · TO-220

BUL1102E from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor, with base current rated at 2 A and base peak current at 4 A (tP < 5 ms) per Table 2. |
| 2 | C | passive | Collector terminal, rated for 1100 V collector-emitter voltage (VCES) and 4 A collector current with 8 A peak (tP < 5 ms) per Table 2. |
| 3 | E | passive | Emitter terminal, with emitter-base voltage rated at 12 V (VEBO) per Table 2. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCES |  |  | 1100 | V | VBE = 0 | 2 |
| Collector-emitter voltage | VCEO |  |  | 450 | V | IB = 0 | 2 |
| Emitter-base voltage | VEBO |  |  | 12 | V | IC = 0 | 2 |
| Collector current | IC |  |  | 4 | A |  | 2 |
| Collector peak current | ICM |  |  | 8 | A | tP < 5 ms | 2 |
| Base current | IB |  |  | 2 | A |  | 2 |
| Base peak current | IBM |  |  | 4 | A | tP < 5 ms | 2 |
| BUL1102E total dissipation | PTOT |  |  | 70 | W | TC = 25 °C | 2 |
| Storage temperature | TSTG | -65 |  | 150 | °C |  | 2 |
| Max. operating junction temperature | TJ |  |  | 150 | °C |  | 2 |
| Thermal resistance junction-case | RthJC |  | 1.8 |  | °C/W | BUL1203E thermal resistance junction-case as printed | 2 |
| Collector cut-off current | ICES |  |  | 100 | µA | VBE = 0; VCE = 1100 V | 3 |
| Emitter cut-off current | IEBO |  |  | 1 | mA | IC = 0; VEB = 12 V | 3 |
| Collector-emitter sustaining voltage | VCEO(sus) | 450 |  |  | V | IB = 0; IC = 100 mA | 3 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 1.5 | V | IC = 2 A; IB = 400 mA | 3 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.5 | V | IC = 2 A; IB = 400 mA | 3 |
| DC current gain | hFE | 35 |  | 70 |  | IC = 250 mA; VCE = 5 V | 3 |
| DC current gain | hFE | 12 |  | 20 |  | IC = 2 A; VCE = 5 V; for BUL1102E | 3 |
| Storage time | ts |  | 2.5 |  | µs | Resistive load; IC = 2.5 A; VCC = 250 V; IB1 = 0.5 A; IB2 = 1 A; TP = 30 µs | 3 |
| Fall time | tf |  | 300 |  | ns | Resistive load; IC = 2.5 A; VCC = 250 V; IB1 = 0.5 A; IB2 = 1 A; TP = 30 µs | 3 |
| Avalanche energy | Ear | 6 |  |  | mJ | L = 2 mH; C = 1.8 nF; IBR ≤ 2.5 A; 25 °C < TC < 125 °C | 3 |

## CAD (KiCad official)

- Symbol: `BUL1102E`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `bul1102e-etched.step` / `bul1102e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bul1102e.step` / `bul1102e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/bul1102e.pdf) (13 pp, sha256 `579a0e430565d66a`, retrieved 2026-11-06, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bul1102e-datasheet.pdf)