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BUK7560-100A-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbuk7560-100a-vbfactory-2.0.0extractor-text

Verified BUK7560-100A-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BUK7560-100A-VB · TO-220AB · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-yb8xzkjr/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: thickness within the datasheet's package drawing (vertical TO package); standing height not judged: the drawing read gives no overall height (H, H1 or L) (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ buk7560-100a-vb.kicad_sym✓ buk7560-100a-vb.kicad_mod✓ buk7560-100a-vb.step
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BUK7560-100A-VB

VBsemi Elec · MOSFETs · TO-220AB

BUK7560-100A-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage VGS to ±20 V.
2 D passive Drain terminal; drain-source voltage is rated 100 V and continuous drain current 55 A at TC = 25 °C (junction-to-case thermal resistance is specified to the drain).
3 S passive Source terminal; source-drain diode continuous current is rated 40 A (IS) at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VSS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 80 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 80 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 75 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.036 Ω VGS = 10 V, ID = 5 A 2
Drain-Source On-State Resistance rDS(on) 0.05 Ω VGS = 10 V, ID = 5 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.065 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Forward Transconductance gfs 10 S VDS = 15 V, ID = 15 A 2
Continuous Source Current IS 40 A TC = 25 °C 2
Pulsed Source Current ISM 120 A TC = 25 °C 2
Diode Forward Voltage VSD 1 1.5 V IF = 30 A, VGS = 0 V 2
Output Capacitance Coss 270 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 90 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Gate-Source Charge Qgs 11 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Gate-Drain Charge Qgd 9 nC VDS = 50 V, VGS = 10 V, ID = 40 A 2
Gate Resistance RG 1.7 Ω 2
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 55 A TC = 25 °C, TJ = 175 °C 1
Continuous Drain Current ID 40 A TC = 125 °C, TJ = 175 °C 1
Avalanche Current IAR 35 A 1
Repetitive Avalanche Energy EAR 61 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 127 W TC = 25 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C, 1" square PCB 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient (PCB Mount) RthJA 40 °C/W 1" square PCB (FR-4) 1
Junction-to-Case (Drain) RthJC 1.4 °C/W 1

CAD (KiCad official)

  • Symbol: BUK7560-100A-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: buk7560-100a-vb-etched.step / buk7560-100a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); buk7560-100a-vb.step / buk7560-100a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 269e1e937eadcc91, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF