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BUF602IDBVT

Texas Instruments · Operational Amplifier · SOT-23-5

BUF602IDBVT from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Out output Buffer output terminal capable of ±60 mA continuous and ±350 mA peak output current with ±3.7 to ±4.0 V swing into 100-500Ω loads.
2 −VCC power_in Negative supply rail, operating range ±1.4 to ±6.3 V dual supplies or 0 V ground in single-supply mode up to +12.6 V.
3 VREF output Optional mid-supply reference output for AC-coupled applications, provides mid-point reference to reduce external components and supply current.
4 +VCC power_in Positive supply rail, operating range ±1.4 to ±6.3 V dual supplies or +2.8 to +12.6 V single-supply mode.
5 In input High-impedance input terminal with 1.0 MΩ

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOT-23-5
Category Amplifiers/Comparators
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Bandwidth 560 1000 MHz VS = ±5V; VO = 500mVPP 3
Slew Rate 7000 8000 V/µs VS = ±5V; VO = 5V Step 3
Rise Time and Fall Time 350 625 ps VS = ±5V; VO = 0.2V Step 3
2nd-Harmonic Distortion -57 -44 dBc VS = ±5V; VO = 2VPP, 5MHz; RL = 100Ω 3
2nd-Harmonic Distortion -76 -63 dBc VS = ±5V; VO = 2VPP, 5MHz; RL = 500Ω 3
3rd-Harmonic Distortion -68 -63 dBc VS = ±5V; VO = 2VPP, 5MHz; RL = 100Ω 3
3rd-Harmonic Distortion -98 -85 dBc VS = ±5V; VO = 2VPP, 5MHz; RL = 500Ω 3
Input Voltage Noise 4.8 5.1 nV/√Hz VS = ±5V; f > 100kHz 3
Input Current Noise 2.1 2.6 pA/√Hz VS = ±5V; f > 100kHz 3
Maximum Gain 0.99 1 V/V VS = ±5V; RL = 500Ω 3
Minimum Gain 0.98 0.99 V/V VS = ±5V; RL = 500Ω 3
Input Offset Voltage -30 16 30 mV VS = ±5V 3
Average Input Offset Voltage Drift -125 125 µV/°C VS = ±5V 3
Input Bias Current -7 3 7 µA VS = ±5V 3
Average Input Bias Current Drift -20 20 nA/°C VS = ±5V 3
Output Voltage Swing 3.7 3.8 V VS = ±5V; RL = 100Ω 3
Output Voltage Swing 3.8 4 V VS = ±5V; RL = 500Ω 3
Output Current (Continuous) 50 60 mA VS = ±5V; VO = 0V 3
Maximum Operating Voltage 6.3 V 3
Minimum Operating Voltage 1.4 V 3
Maximum Quiescent Current 5.8 6.3 mA VS = ±5V 3
Minimum Quiescent Current 5.3 5.8 mA VS = ±5V 3
Power-Supply Rejection Ratio (+PSRR) 48 54 dB VS = ±5V 3
Bandwidth 400 780 MHz VS = +5V; VO = 500mVPP; RL = 100Ω to VS/2 4
Slew Rate 1800 2500 V/µs VS = +5V; VO = 3V Step; RL = 100Ω to VS/2 4
Rise Time and Fall Time 450 875 ps VS = +5V; VO = 0.2V Step; RL = 100Ω to VS/2 4
2nd-Harmonic Distortion -50 -45 dBc VS = +5V; VO = 2VPP, 5MHz; RL = 100Ω 4
2nd-Harmonic Distortion -73 -62 dBc VS = +5V; VO = 2VPP, 5MHz; RL = 500Ω 4
3rd-Harmonic Distortion -70 -64 dBc VS = +5V; VO = 2VPP, 5MHz; RL = 100Ω 4
3rd-Harmonic Distortion -73 -72 dBc VS = +5V; VO = 2VPP, 5MHz; RL = 500Ω 4
Input Voltage Noise 4.9 5.2 nV/√Hz VS = +5V; f > 100kHz 4
Input Current Noise 2.2 2.7 pA/√Hz VS = +5V; f > 100kHz 4
Maximum Gain 0.99 1 V/V VS = +5V; RL = 500Ω 4
Minimum Gain 0.98 0.99 V/V VS = +5V; RL = 500Ω 4
Input Offset Voltage -30 16 30 mV VS = +5V 4
Average Input Offset Voltage Drift -125 125 µV/°C VS = +5V 4
Input Bias Current -7 3 7 µA VS = +5V 4
Average Input Bias Current Drift -20 20 nA/°C VS = +5V 4
Most Positive Output Voltage 3.7 3.9 V VS = +5V; RL = 100Ω 4
Most Positive Output Voltage 3.8 4.1 V VS = +5V; RL = 500Ω 4
Least Positive Output Voltage 1.1 1.3 V VS = +5V; RL = 100Ω 4
Least Positive Output Voltage 0.9 1.2 V VS = +5V; RL = 500Ω 4
Output Current (Continuous) 50 60 mA VS = +5V; VO = 0V 4
Maximum Mid-Supply Reference Voltage 2.5 2.6 V VS = +5V 4
Minimum Mid-Supply Reference Voltage 2.4 2.5 V VS = +5V 4
Maximum Operating Voltage 12.6 V VS = +5V 5
Minimum Operating Voltage 2.8 V VS = +5V 5
Maximum Quiescent Current 5.3 5.8 mA VS = +5V 5
Minimum Quiescent Current 4.8 5.3 mA VS = +5V 5
Power-Supply Rejection Ratio (+PSRR) 46 52 dB VS = +5V 5
Power Supply -6.5 6.5 V Power Supply ±6.5VDC 2
Storage Temperature Range -65 125 °C D, DBV packages 2
Lead Temperature 300 °C Soldering, 10s 2
Junction Temperature (TJ) 150 °C 2
ESD Rating Human Body Model (HBM) 2000 V 2
ESD Rating Charge Device Model (CDM) 1000 V 2
ESD Rating Machine Model (MM) 200 V 2
Specification ID operating temperature range -40 85 °C Specification: ID 3
Thermal Resistance θJA, DBV SOT23-5 Junction-to-Ambient θJA 150 °C/W DBV SOT23-5 Junction-to-Ambient 3

CAD (KiCad official)

  • Symbol: BUF602IDBVT
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: SOT-23-5 (KiCad packages3D, STEP)
  • 3D model files: buf602idbvt-etched.step / buf602idbvt-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); buf602idbvt.step / buf602idbvt.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 692e0e1979a6bbe7, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF