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BU406-220C
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Jilin Sino-Microelectronics Bipolar Transistors - BJT, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BU406-220C
Jilin Sino-Microelectronics · Bipolar Transistors - BJT · TO-220
BU406-220C from Jilin Sino-Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; absolute maximum DC base current is 4 A (8 A pulse) and emitter-base voltage VEBO is 9 V. |
| 2 | C | passive | Collector terminal; VCEO is 200 V, VCES is 400 V and maximum DC collector current is 7 A (10 A pulse). |
| 3 | E | passive | Emitter terminal of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 9 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jilin Sino-Microelectronics |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (VBE=0) | VCES | 400 | V | 2 | |||
| Collector-Emitter Voltage (IB=0) | VCEO | 200 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 9 | V | 2 | |||
| Collector Current (DC) | IC | 7 | A | 2 | |||
| Collector Current (pulse) | ICP | 10 | A | 2 | |||
| Base Current (DC) | IB | 4 | A | 2 | |||
| Base Current (pulse) | IBP | 8 | A | 2 | |||
| Total Dissipation (TO-220C) | PC | 60 | W | 2 | |||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction Case TO-220C | Rth(j-c) | 2.08 | ℃/W | 2 | |||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 200 | V | IC=10mA,IB=0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 400 | V | IC=1mA,IE=0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9 | V | IE=1mA,IC=0 | 2 | ||
| Collector Cut-off Current | ICBO | 10 | μA | VCB=400V, IE=0 | 2 | ||
| Collector Cut-off Current | ICEO | 50 | μA | VCE=200V,IB=0 | 2 | ||
| Emitter Cut-off Current | IEBO | 10 | μA | VEB=9V, IC=0 | 2 | ||
| DC Current Gain | Hfe(1) | 60 | 85 | VCE =5V, IC=2A | 2 | ||
| DC Current Gain | Hfe(2) | 15 | VCE =5V, IC=7A | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC=5A, IB=500mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | V | IC=5A, IB=500mA | 2 | ||
| Transition Frequency | fT | 10 | MHz | VCE=10V, IC=0.5A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | 最大基极脉冲电流 Base Current(pulse) IBP 8 A 最大集电极耗散功率 Total Dissipation (TO-220C) PC 60 W | 2 |
CAD (KiCad official)
- Symbol:
BU406-220C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
bu406-220c-etched.step/bu406-220c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bu406-220c.step/bu406-220c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jilin Sino-Microelectronics datasheet (6 pp, sha256
be1a9d8050f32ee2, retrieved 2026-11-05, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BU406-220C
**Jilin Sino-Microelectronics** · Bipolar Transistors - BJT · TO-220
BU406-220C from Jilin Sino-Microelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; absolute maximum DC base current is 4 A (8 A pulse) and emitter-base voltage VEBO is 9 V. |
| 2 | C | passive | Collector terminal; VCEO is 200 V, VCES is 400 V and maximum DC collector current is 7 A (10 A pulse). |
| 3 | E | passive | Emitter terminal of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 9 V minimum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jilin Sino-Microelectronics |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage (VBE=0) | VCES | | | 400 | V | | 2 |
| Collector-Emitter Voltage (IB=0) | VCEO | | | 200 | V | | 2 |
| Emitter-Base Voltage | VEBO | | | 9 | V | | 2 |
| Collector Current (DC) | IC | | | 7 | A | | 2 |
| Collector Current (pulse) | ICP | | | 10 | A | | 2 |
| Base Current (DC) | IB | | | 4 | A | | 2 |
| Base Current (pulse) | IBP | | | 8 | A | | 2 |
| Total Dissipation (TO-220C) | PC | | | 60 | W | | 2 |
| Junction Temperature | Tj | | | 150 | ℃ | | 2 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance Junction Case TO-220C | Rth(j-c) | | | 2.08 | ℃/W | | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 200 | | | V | IC=10mA,IB=0 | 2 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 400 | | | V | IC=1mA,IE=0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 9 | | | V | IE=1mA,IC=0 | 2 |
| Collector Cut-off Current | ICBO | | | 10 | μA | VCB=400V, IE=0 | 2 |
| Collector Cut-off Current | ICEO | | | 50 | μA | VCE=200V,IB=0 | 2 |
| Emitter Cut-off Current | IEBO | | | 10 | μA | VEB=9V, IC=0 | 2 |
| DC Current Gain | Hfe(1) | 60 | | 85 | | VCE =5V, IC=2A | 2 |
| DC Current Gain | Hfe(2) | 15 | | | | VCE =5V, IC=7A | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 1.5 | V | IC=5A, IB=500mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 1.5 | V | IC=5A, IB=500mA | 2 |
| Transition Frequency | fT | 10 | | | MHz | VCE=10V, IC=0.5A | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | | 最大基极脉冲电流 Base Current(pulse) IBP 8 A 最大集电极耗散功率 Total Dissipation (TO-220C) PC 60 W | 2 |
## CAD (KiCad official)
- Symbol: `BU406-220C`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `bu406-220c-etched.step` / `bu406-220c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bu406-220c.step` / `bu406-220c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jilin Sino-Microelectronics datasheet](docs/bu406-220c-datasheet.pdf) (6 pp, sha256 `be1a9d8050f32ee2`, retrieved 2026-11-05, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bu406-220c-datasheet.pdf)