component
BTS711L1XUMA1
Public Made by Adomby adom
Infineon Technologies Power Distribution Switches, SOIC-20-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BTS711L1XUMA1
Infineon Technologies · Power Distribution Switches · SOIC-20-300mil
BTS711L1XUMA1 from Infineon Technologies, in a SOIC-20-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 2 | GND1/2 | power_in | Ground 1/2 of chip 1 (channels 1 and 2); reverse battery protection requires an external current limit such as RGND = 150 Ω in the GND connection. |
| 3 | IN1 | input | Input 1 activates channel 1 on a logic high signal; DC input voltage is limited to -10 ... +16 V and input current to ±2.0 mA. |
| 4 | ST1/2 | output | Diagnostic feedback 1/2 for channels 1 and 2, open drain, pulled low on failure; status current limited to ±5.0 mA. |
| 5 | IN2 | input | Input 2 activates channel 2 on a logic high signal; DC input voltage is limited to -10 ... +16 V and input current to ±2.0 mA. |
| 6 | GND3/4 | power_in | Ground 3/4 of chip 2 (channels 3 and 4); reverse battery protection requires an external current limit such as RGND = 150 Ω in the GND connection. |
| 7 | IN3 | input | Input 3 activates channel 3 on a logic high signal; DC input voltage is limited to -10 ... +16 V and input current to ±2.0 mA. |
| 8 | ST3/4 | output | Diagnostic feedback 3/4 for channels 3 and 4, open drain, pulled low on failure; status current limited to ±5.0 mA. |
| 9 | IN4 | input | Input 4 activates channel 4 on a logic high signal; DC input voltage is limited to -10 ... +16 V and input current to ±2.0 mA. |
| 10 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 11 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 12 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 13 | OUT4 | output | Protected high-side power output of channel 4; wiring must be designed for the max. short-circuit current. |
| 14 | OUT3 | output | Protected high-side power output of channel 3; wiring must be designed for the max. short-circuit current. |
| 15 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 16 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 17 | OUT2 | output | Protected high-side power output of channel 2; wiring must be designed for the max. short-circuit current. |
| 18 | OUT1 | output | Protected high-side power output of channel 1; wiring must be designed for the max. short-circuit current. |
| 19 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
| 20 | Vbb | power_in | Positive power supply voltage (Vbb(on) 5.0 to 34 V); wiring must carry the simultaneous max. short-circuit currents of channels 1 to 4 and provide low thermal resistance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-20-300mil |
| Category | Power Supply Chip |
| Pins | 20 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | Vbb | 43 | V | 4 | |||
| Supply voltage for full short circuit protection | Vbb | 34 | V | Tj,start = -40 ... +150 °C | 4 | ||
| Load dump protection | VLoadDump | 60 | V | UA = 13.5 V, RI = 2 Ω, td = 200 ms; IN = low or high; each channel loaded with RL = 7.1 Ω | 4 | ||
| Operating temperature range | Tj | -40 | 150 | °C | 4 | ||
| Power dissipation (DC) | Ptot | 3.6 | W | Ta = 25 °C, all channels active | 4 | ||
| Power dissipation (DC) | Ptot | 1.9 | W | Ta = 85 °C | 4 | ||
| Inductive load switch-off energy dissipation, single pulse | EAS | 150 | mJ | Vbb = 12 V, Tj,start = 150 °C, IL = 1.9 A, ZL = 66 mH, 0 Ω; one channel | 4 | ||
| Inductive load switch-off energy dissipation, single pulse | EAS | 320 | mJ | Vbb = 12 V, Tj,start = 150 °C, IL = 2.8 A, ZL = 66 mH, 0 Ω; two parallel channels | 4 | ||
| Inductive load switch-off energy dissipation, single pulse | EAS | 800 | mJ | Vbb = 12 V, Tj,start = 150 °C, IL = 4.4 A, ZL = 66 mH, 0 Ω; four parallel channels | 4 | ||
| Electrostatic discharge capability (ESD) | VESD | 1 | kV | Human Body Model | 4 | ||
| Input voltage (DC) | VIN | -10 | 16 | V | DC | 4 | |
| Current through input pin (DC) | IIN | -2 | 2 | mA | DC | 4 | |
| Current through status pin (DC) | IST | -5 | 5 | mA | DC | 4 | |
| Reverse battery voltage | -Vbb | 32 | V | Requires 150 Ω resistor in GND connection | 6 | ||
| On-state resistance (Vbb to OUT) | RON | 165 | 200 | mΩ | IL = 1.8 A each channel, Tj = 25 °C | 5 | |
| On-state resistance (Vbb to OUT) | RON | 320 | 400 | mΩ | IL = 1.8 A each channel, Tj = 150 °C | 5 | |
| On-state resistance (Vbb to OUT) | RON | 83 | 100 | mΩ | two parallel channels, Tj = 25 °C | 5 | |
| On-state resistance (Vbb to OUT) | RON | 42 | 50 | mΩ | four parallel channels, Tj = 25 °C | 5 | |
| Nominal load current, one channel active | IL(NOM) | 1.7 | 1.9 | A | Device on PCB, Ta = 85 °C, Tj ≤ 150 °C | 5 | |
| Nominal load current, two parallel channels active | IL(NOM) | 2.6 | 2.8 | A | Device on PCB, Ta = 85 °C, Tj ≤ 150 °C | 5 | |
| Nominal load current, four parallel channels active | IL(NOM) | 4.1 | 4.4 | A | Device on PCB, Ta = 85 °C, Tj ≤ 150 °C | 5 | |
| Turn-on time to 90% VOUT | ton | 80 | 200 | 400 | μs | RL = 12 Ω, Tj = -40...+150 °C | 5 |
| Turn-off time to 10% VOUT | toff | 80 | 200 | 400 | μs | RL = 12 Ω, Tj = -40...+150 °C | 5 |
| Slew rate on | dV/dton | 0.1 | 1 | V/μs | 10 to 30% VOUT, RL = 12 Ω, Tj = -40...+150 °C | 5 | |
| Slew rate off | -dV/dtoff | 0.1 | 1 | V/μs | 70 to 40% VOUT, RL = 12 Ω, Tj = -40...+150 °C | 5 | |
| Operating voltage | Vbb(on) | 5 | 34 | V | Tj = -40...+150 °C | 5 | |
| Undervoltage shutdown | Vbb(under) | 3.5 | 5 | V | Tj = -40...+150 °C | 5 | |
| Undervoltage restart | Vbb(u rst) | 5 | V | Tj = -40...+25 °C | 5 | ||
| Undervoltage restart | Vbb(u rst) | 7 | V | Tj = +150 °C | 5 | ||
| Undervoltage restart of charge pump | Vbb(ucp) | 5.6 | 7 | V | Tj = -40...+150 °C | 5 | |
| Overvoltage shutdown | Vbb(over) | 34 | 43 | V | Tj = -40...+150 °C | 5 | |
| Overvoltage restart | Vbb(o rst) | 33 | V | Tj = -40...+150 °C | 5 | ||
| Overvoltage protection | Vbb(AZ) | 42 | 47 | V | Tj = -40...+150 °C; Ibb = 40 mA | 5 | |
| Standby current, all channels off | Ibb(off) | 28 | 60 | μA | Tj = 25 °C, VIN = 0 | 6 | |
| Standby current, all channels off | Ibb(off) | 44 | 70 | μA | Tj = 150 °C, VIN = 0 | 6 | |
| Leakage output current (included in Ibb(off)) | IL(off) | 12 | μA | VIN = 0 | 6 | ||
| Operating current | IGND | 2 | 3 | mA | VIN = 5 V, Tj = -40...+150 °C, one channel on; IGND = IGND1/2 + IGND3/4 | 6 | |
| Operating current | IGND | 8 | 12 | mA | VIN = 5 V, Tj = -40...+150 °C, four channels on; IGND = IGND1/2 + IGND3/4 | 6 | |
| Initial peak short circuit current limit | IL(SCp) | 5.5 | 9.5 | 13 | A | each channel, Tj = -40 °C | 6 |
| Initial peak short circuit current limit | IL(SCp) | 4.5 | 7.5 | 11 | A | each channel, Tj = 25 °C | 6 |
| Initial peak short circuit current limit | IL(SCp) | 2.5 | 4.5 | 7 | A | each channel, Tj = +150 °C | 6 |
| Thermal overload trip temperature | Tjt | 150 | °C | 6 | |||
| Open load detection current, on-condition | IL(OL)1 | 10 | 200 | mA | each channel, Tj = -40 °C | 7 | |
| Open load detection current, on-condition | IL(OL)1 | 10 | 150 | mA | each channel, Tj = 25 °C | 7 | |
| Open load detection voltage | VOUT(OL) | 2 | 3 | 4 | V | Tj = -40...+150 °C | 7 |
| Internal output pull down (OUT to GND) | RO | 4 | 10 | 30 | kΩ | VOUT = 5 V, Tj = -40...+150 °C | 7 |
| Input resistance | RI | 2.5 | 3.5 | 6 | kΩ | Tj = -40...+150 °C | 7 |
| Input turn-on threshold voltage | VIN(T+) | 1.7 | 3.5 | V | Tj = -40...+150 °C | 7 | |
| Input turn-off threshold voltage | VIN(T-) | 1.5 | V | Tj = -40...+150 °C | 7 | ||
| Off state input current | IIN(off) | 1 | 50 | μA | VIN = 0.4 V, Tj = -40...+150 °C | 7 | |
| On state input current | IIN(on) | 20 | 50 | 90 | μA | VIN = 5 V, Tj = -40...+150 °C | 7 |
| Delay time for status with open load after switch off (other channel in off state) | td(ST OL4) | 100 | 320 | 800 | μs | Tj = -40...+150 °C | 7 |
| Delay time for status with open load after switch off (other channel in on state) | td(ST OL5) | 5 | 20 | μs | Tj = -40...+150 °C | 7 | |
| Status output zener limit voltage | VST(high) | 5.4 | 6.1 | V | Tj = -40...+150 °C, IST = +1.6 mA | 7 | |
| Status output ST low voltage | VST(low) | 0.4 | V | Tj = -40...+25 °C, IST = +1.6 mA | 7 | ||
| Status output ST low voltage | VST(low) | 0.6 | V | Tj = +150 °C, IST = +1.6 mA | 7 | ||
| Thermal resistance junction - soldering point, each channel | Rthjs | 16 | K/W | Soldering point: upper side of solder edge of pin 15; device on 50mm50mm1.5mm epoxy PCB FR4 with 6cm2 Cu for Vbb | 4 | ||
| Thermal resistance junction - ambient, one channel active | Rthja | 44 | K/W | Device on 50mm50mm1.5mm epoxy PCB FR4 with 6cm2 Cu; vertical, no blown air | 4 | ||
| Thermal resistance junction - ambient, all channels active | Rthja | 35 | K/W | Device on 50mm50mm1.5mm epoxy PCB FR4 with 6cm2 Cu; vertical, no blown air | 4 |
CAD (KiCad official)
- Symbol:
BTS711L1XUMA1 - Footprint:
Package_SO:SOIC-20W_7.5x12.8mm_P1.27mm - 3D model: SOIC-20-300mil (KiCad packages3D, STEP)
- 3D model files:
bts711l1xuma1-etched.step/bts711l1xuma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bts711l1xuma1.step/bts711l1xuma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (18 pp, sha256
353e2b1635c567f3, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).