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BTS5016-1EKB
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Infineon Technologies Power Distribution Switches, SOIC-14. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTS5016-1EKB
Infineon Technologies · Power Distribution Switches · SOIC-14
BTS5016-1EKB from Infineon Technologies, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | Not connected; no internal connection to the chip. |
| 2 | NC | unconnected | Not connected; no internal connection to the chip. |
| 3 | GND | power_in | Ground connection for the device logic; the datasheet states logic ground is independent from load ground. |
| 4 | IN | input | Input signal for channel activation; the input has Schmitt-trigger hysteresis with VIN(L) max 0.8 V and VIN(H) min 2 V, and absolute maximum voltage of -0.3 to 6 V (7 V for t < 2 min) with current limited to ±2 mA. |
| 5 | DEN | input | Diagnostic enable: digital signal that enables or disables the diagnosis of the device; VDEN(L) max 0.8 V, VDEN(H) min 2 V, absolute maximum -0.3 to 6 V (7 V for t < 2 min) with current limited to ±2 mA. |
| 6 | IS | output | Sense current output of the selected channel; the absolute maximum voltage is -0.3 V to VS and the current range is -25 mA to 50 mA. |
| 7 | NC | unconnected | Not connected; no internal connection to the chip. |
| 8 | NC | unconnected | Not connected; no internal connection to the chip. |
| 9 | NC | unconnected | Not connected; no internal connection to the chip. |
| 10 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 11 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 12 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 13 | NC | unconnected | Not connected; no internal connection to the chip. |
| 14 | NC | unconnected | Not connected; no internal connection to the chip. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-14 |
| Category | Power Management (PMIC) |
| Pins | 14 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Nominal operating voltage | VNOM | 8 | 13.5 | 18 | V | 11 | |
| Extended operating voltage | VS(OP) | 5 | 28 | V | VIN = 4.5 V, RL = 2 Ω, VDS < 0.5 V | 11 | |
| Minimum functional supply voltage | VS(OP)_MIN | 3.8 | 4.2 | 5 | V | VIN = 4.5 V, RL = 2 Ω, From IOUT = 0 A to VDS < 0.5 V | 11 |
| Undervoltage shutdown | VS(UV) | 3 | 3.4 | 4.1 | V | VIN = 4.5 V, VDEN = 0 V, RL = 2 Ω, From VDS < 1 V to IOUT = 0 A | 11 |
| Operating current channel active | IGND_1 | 5 | 9 | mA | VIN = 5.5 V, VDEN = 5.5 V, Device in RDS(ON), VS = 18 V | 11 | |
| Standby current for whole device with load | IS(OFF) | 0.1 | 0.7 | μA | VS = 18 V, VOUT = 0 V, VIN floating, VDEN floating, TJ ≤ 85 °C | 11 | |
| Maximum standby current for whole device with load | IS(OFF)_150 | 6 | 25 | μA | VS = 18 V, VOUT = 0 V, VIN floating, VDEN floating, TJ = 150 °C | 11 | |
| Supply voltage | VS | -0.3 | 28 | V | 9 | ||
| Reverse polarity voltage | -VS(REV) | 0 | 16 | V | t < 2 min, TA = 25 °C, RL ≥ 2 Ω, RGND = 150 Ω | 9 | |
| Supply voltage for load dump protection | VS(LD) | 41 | V | RI = 2 Ω, RL = 2 Ω | 9 | ||
| Voltage at INPUT pin | VIN | -0.3 | 6 | V | 9 | ||
| Current through INPUT pin | IIN | -2 | 2 | mA | 9 | ||
| Voltage at DEN pin | VDEN | -0.3 | 6 | V | 9 | ||
| Current through DEN pin | IDEN | -2 | 2 | mA | 9 | ||
| Voltage at IS pin | VIS | -0.3 | V | 9 | |||
| Current through IS pin | IIS | -25 | 50 | mA | 9 | ||
| Power dissipation (DC) | PTOT | 2 | W | TA = 85 °C, TJ < 150 °C | 9 | ||
| Maximum energy dissipation single pulse | EAS | 95 | mJ | IL(0) = 8 A, TJ(0) = 150 °C, VS = 13.5 V | 9 | ||
| Voltage at power transistor | VDS | 41 | V | 9 | |||
| Current through ground pin | IGND | -20 | 20 | mA | t < 2 min | 10 | |
| Junction temperature | TJ | -40 | 150 | °C | 10 | ||
| Storage temperature | TSTG | -55 | 150 | °C | 10 | ||
| Drain source diode voltage during reverse polarity | VDS(REV) | 200 | 650 | 700 | mV | IL = -4 A, TJ = 150 °C | 26 |
| Overvoltage protection | VS(AZ) | 41 | 46 | 53 | V | ISOV = 5 mA | 26 |
| Load current limitation | IL5(SC) | 50 | 60 | 80 | A | VDS = 5 V | 26 |
| Thermal shutdown temperature | TJ(SC) | 150 | 170 | 200 | °C | 26 | |
| Open load detection threshold in OFF state | VS - VOL(OFF) | 4 | 6 | V | VIN = 0 V, VDEN = 4.5 V | 34 | |
| Open load detection threshold in ON state | IL(OL) | 5.8 | 35 | mA | VIN = VDEN = 4.5 V, IIS(OL) = 4 μA | 34 | |
| IS pin leakage current when sense is disabled | IIS_(DIS) | 1 | μA | VIN = 4.5 V, VDEN = 0 V, IL = IL4 = 10 A | 34 | ||
| Sense signal saturation voltage | VS - VIS (RANGE) | 0 | 2.2 | 3 | V | VIN = 0 V, VOUT = VS > 10 V, VDEN = 4.5 V, IIS = 6 mA | 34 |
| Sense signal maximum current in fault condition | IIS(FAULT) | 6 | 15 | 35 | mA | VIS = VIN = VDSEL = 0 V, VOUT = VS > 10 V, VDEN = 4.5 V | 34 |
| Sense pin maximum voltage | VIS(AZ) | 41 | 47 | 53 | V | IIS = 5 mA | 34 |
| Current sense ratio IL0 = 50 mA | kILIS0 | -50 | 4000 | 50 | % | IL0 = 50 mA, VIN = 4.5 V, VDEN = 4.5 V, TJ = -40 °C; 150 °C | 34 |
| Current sense ratio IL1 = 0.5 A | kILIS1 | -40 | 3500 | 40 | % | IL1 = 0.5 A | 34 |
| Current sense ratio IL2 = 2 A | kILIS2 | -22 | 3500 | 22 | % | IL2 = 2 A | 34 |
| Current sense ratio IL3 = 4 A | kILIS3 | -18 | 3500 | 18 | % | IL3 = 4 A | 34 |
| Current sense ratio IL4 = 10 A | kILIS4 | -17 | 3500 | 17 | % | IL4 = 10 A | 34 |
| kILIS derating with current and temperature | ΔkILIS | -8 | 0 | 8 | % | kILIS3 versus kILIS2 | 34 |
| Current sense settling time to kILIS stable after positive input slope on both INput and DEN | tsIS(ON) | 250 | μs | VDEN = VIN = 0 to 4.5 V, VS = 13.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 | ||
| Current sense settling time with load current stable and transition of the DEN | tsIS(ON_DEN) | 20 | μs | VIN = 4.5 V, VDEN = 0 to 4.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 | ||
| Current sense settling time to IIS stable for overload detection | tsIS(FAULT) | 250 | μs | VIN = VDEN = 0 to 4.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, VDS = 5 V | 35 | ||
| Diagnostic disable time DEN transition to IIS < 50% IL /kILIS | tsIS(OFF) | 50 | μs | VIN = 4.5 V, VDEN = 4.5 V to 0 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 | ||
| ON-state resistance per channel | RDS(ON)_150 | 21 | 28 | 32 | mΩ | IL = IL4 = 10 A, VIN = 4.5 V, TJ = 150 °C | 19 |
| Drain to source clamping voltage | VDS(AZ) | 41 | 46 | 53 | V | IDS = 20 mA | 19 |
| Output leakage current TJ ≤ 85 °C | IL(OFF) | 0.1 | 0.7 | μA | VIN floating, VOUT = 0 V, TJ ≤ 85 °C | 19 | |
| Output leakage current TJ = 150 °C | IL(OFF)_150 | 2.5 | 25 | μA | VIN floating, VOUT = 0 V, TJ = 150 °C | 19 | |
| Slew rate 30% to 70% VS | dV/dtON | 0.1 | 0.25 | 0.5 | V/μs | RL = 2 Ω, VS = 13.5 V | 19 |
| Slew rate 70% to 30% VS | -dV/dtOFF | 0.1 | 0.25 | 0.5 | V/μs | 19 | |
| Turn-ON time to VOUT = 90% VS | tON | 30 | 100 | 250 | μs | 19 | |
| Turn-OFF time to VOUT = 10% VS | tOFF | 30 | 100 | 250 | μs | 19 | |
| Low level input voltage range | VIN(L) | -0.3 | 0.8 | V | 37 | ||
| High level input voltage range | VIN(H) | 2 | 6 | V | 37 | ||
| Low level input current | IIN(L) | 1 | 10 | 25 | μA | VIN = 0.8 V | 37 |
| High level input current | IIN(H) | 2 | 10 | 25 | μA | VIN = 5.5 V | 37 |
| DEN low level input voltage range | VDEN(L) | -0.3 | 0.8 | V | 37 | ||
| DEN high level input voltage range | VDEN(H) | 2 | 6 | V | 37 | ||
| DEN low level input current | IDEN(L) | 1 | 10 | 25 | μA | VDEN = 0.8 V | 37 |
| DEN high level input current | IDEN(H) | 2 | 10 | 25 | μA | VDEN = 5.5 V | 37 |
| Junction to soldering point | RthJS | 5 | K/W | Not subject to production test, specified by design | 12 | ||
| Junction to ambient | RthJA | 30 | K/W | JEDEC JESD51-2,-5,-7, natural convection, FR4 2s2p board | 12 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | Cu, 2 x 35 μm Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper | 12 |
CAD (KiCad official)
- Symbol:
BTS5016-1EKB - Footprint:
Package_SO:SOIC-14_3.9x8.7mm_P1.27mm - 3D model: SOIC-14 (KiCad packages3D, STEP)
- 3D model files:
bts5016-1ekb-etched.step/bts5016-1ekb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bts5016-1ekb.step/bts5016-1ekb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (53 pp, sha256
2612c1d301a94b7a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTS5016-1EKB
**Infineon Technologies** · Power Distribution Switches · SOIC-14
BTS5016-1EKB from Infineon Technologies, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | NC | unconnected | Not connected; no internal connection to the chip. |
| 2 | NC | unconnected | Not connected; no internal connection to the chip. |
| 3 | GND | power_in | Ground connection for the device logic; the datasheet states logic ground is independent from load ground. |
| 4 | IN | input | Input signal for channel activation; the input has Schmitt-trigger hysteresis with VIN(L) max 0.8 V and VIN(H) min 2 V, and absolute maximum voltage of -0.3 to 6 V (7 V for t < 2 min) with current limited to ±2 mA. |
| 5 | DEN | input | Diagnostic enable: digital signal that enables or disables the diagnosis of the device; VDEN(L) max 0.8 V, VDEN(H) min 2 V, absolute maximum -0.3 to 6 V (7 V for t < 2 min) with current limited to ±2 mA. |
| 6 | IS | output | Sense current output of the selected channel; the absolute maximum voltage is -0.3 V to VS and the current range is -25 mA to 50 mA. |
| 7 | NC | unconnected | Not connected; no internal connection to the chip. |
| 8 | NC | unconnected | Not connected; no internal connection to the chip. |
| 9 | NC | unconnected | Not connected; no internal connection to the chip. |
| 10 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 11 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 12 | OUT | power_out | Protected high-side power output channel; all OUT pins must be connected together on the PCB, and the traces must withstand the maximum current that can flow. |
| 13 | NC | unconnected | Not connected; no internal connection to the chip. |
| 14 | NC | unconnected | Not connected; no internal connection to the chip. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-14 |
| Category | Power Management (PMIC) |
| Pins | 14 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Nominal operating voltage | VNOM | 8 | 13.5 | 18 | V | | 11 |
| Extended operating voltage | VS(OP) | 5 | | 28 | V | VIN = 4.5 V, RL = 2 Ω, VDS < 0.5 V | 11 |
| Minimum functional supply voltage | VS(OP)_MIN | 3.8 | 4.2 | 5 | V | VIN = 4.5 V, RL = 2 Ω, From IOUT = 0 A to VDS < 0.5 V | 11 |
| Undervoltage shutdown | VS(UV) | 3 | 3.4 | 4.1 | V | VIN = 4.5 V, VDEN = 0 V, RL = 2 Ω, From VDS < 1 V to IOUT = 0 A | 11 |
| Operating current channel active | IGND_1 | | 5 | 9 | mA | VIN = 5.5 V, VDEN = 5.5 V, Device in RDS(ON), VS = 18 V | 11 |
| Standby current for whole device with load | IS(OFF) | | 0.1 | 0.7 | μA | VS = 18 V, VOUT = 0 V, VIN floating, VDEN floating, TJ ≤ 85 °C | 11 |
| Maximum standby current for whole device with load | IS(OFF)_150 | | 6 | 25 | μA | VS = 18 V, VOUT = 0 V, VIN floating, VDEN floating, TJ = 150 °C | 11 |
| Supply voltage | VS | -0.3 | | 28 | V | | 9 |
| Reverse polarity voltage | -VS(REV) | 0 | | 16 | V | t < 2 min, TA = 25 °C, RL ≥ 2 Ω, RGND = 150 Ω | 9 |
| Supply voltage for load dump protection | VS(LD) | | | 41 | V | RI = 2 Ω, RL = 2 Ω | 9 |
| Voltage at INPUT pin | VIN | -0.3 | | 6 | V | | 9 |
| Current through INPUT pin | IIN | -2 | | 2 | mA | | 9 |
| Voltage at DEN pin | VDEN | -0.3 | | 6 | V | | 9 |
| Current through DEN pin | IDEN | -2 | | 2 | mA | | 9 |
| Voltage at IS pin | VIS | -0.3 | | | V | | 9 |
| Current through IS pin | IIS | -25 | | 50 | mA | | 9 |
| Power dissipation (DC) | PTOT | | | 2 | W | TA = 85 °C, TJ < 150 °C | 9 |
| Maximum energy dissipation single pulse | EAS | | | 95 | mJ | IL(0) = 8 A, TJ(0) = 150 °C, VS = 13.5 V | 9 |
| Voltage at power transistor | VDS | | | 41 | V | | 9 |
| Current through ground pin | IGND | -20 | | 20 | mA | t < 2 min | 10 |
| Junction temperature | TJ | -40 | | 150 | °C | | 10 |
| Storage temperature | TSTG | -55 | | 150 | °C | | 10 |
| Drain source diode voltage during reverse polarity | VDS(REV) | 200 | 650 | 700 | mV | IL = -4 A, TJ = 150 °C | 26 |
| Overvoltage protection | VS(AZ) | 41 | 46 | 53 | V | ISOV = 5 mA | 26 |
| Load current limitation | IL5(SC) | 50 | 60 | 80 | A | VDS = 5 V | 26 |
| Thermal shutdown temperature | TJ(SC) | 150 | 170 | 200 | °C | | 26 |
| Open load detection threshold in OFF state | VS - VOL(OFF) | 4 | | 6 | V | VIN = 0 V, VDEN = 4.5 V | 34 |
| Open load detection threshold in ON state | IL(OL) | 5.8 | | 35 | mA | VIN = VDEN = 4.5 V, IIS(OL) = 4 μA | 34 |
| IS pin leakage current when sense is disabled | IIS_(DIS) | | | 1 | μA | VIN = 4.5 V, VDEN = 0 V, IL = IL4 = 10 A | 34 |
| Sense signal saturation voltage | VS - VIS (RANGE) | 0 | 2.2 | 3 | V | VIN = 0 V, VOUT = VS > 10 V, VDEN = 4.5 V, IIS = 6 mA | 34 |
| Sense signal maximum current in fault condition | IIS(FAULT) | 6 | 15 | 35 | mA | VIS = VIN = VDSEL = 0 V, VOUT = VS > 10 V, VDEN = 4.5 V | 34 |
| Sense pin maximum voltage | VIS(AZ) | 41 | 47 | 53 | V | IIS = 5 mA | 34 |
| Current sense ratio IL0 = 50 mA | kILIS0 | -50 | 4000 | 50 | % | IL0 = 50 mA, VIN = 4.5 V, VDEN = 4.5 V, TJ = -40 °C; 150 °C | 34 |
| Current sense ratio IL1 = 0.5 A | kILIS1 | -40 | 3500 | 40 | % | IL1 = 0.5 A | 34 |
| Current sense ratio IL2 = 2 A | kILIS2 | -22 | 3500 | 22 | % | IL2 = 2 A | 34 |
| Current sense ratio IL3 = 4 A | kILIS3 | -18 | 3500 | 18 | % | IL3 = 4 A | 34 |
| Current sense ratio IL4 = 10 A | kILIS4 | -17 | 3500 | 17 | % | IL4 = 10 A | 34 |
| kILIS derating with current and temperature | ΔkILIS | -8 | 0 | 8 | % | kILIS3 versus kILIS2 | 34 |
| Current sense settling time to kILIS stable after positive input slope on both INput and DEN | tsIS(ON) | | | 250 | μs | VDEN = VIN = 0 to 4.5 V, VS = 13.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 |
| Current sense settling time with load current stable and transition of the DEN | tsIS(ON_DEN) | | | 20 | μs | VIN = 4.5 V, VDEN = 0 to 4.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 |
| Current sense settling time to IIS stable for overload detection | tsIS(FAULT) | | | 250 | μs | VIN = VDEN = 0 to 4.5 V, RIS = 1.2 kΩ, CSENSE < 100 pF, VDS = 5 V | 35 |
| Diagnostic disable time DEN transition to IIS < 50% IL /kILIS | tsIS(OFF) | | | 50 | μs | VIN = 4.5 V, VDEN = 4.5 V to 0 V, RIS = 1.2 kΩ, CSENSE < 100 pF, IL = IL3 = 4 A | 35 |
| ON-state resistance per channel | RDS(ON)_150 | 21 | 28 | 32 | mΩ | IL = IL4 = 10 A, VIN = 4.5 V, TJ = 150 °C | 19 |
| Drain to source clamping voltage | VDS(AZ) | 41 | 46 | 53 | V | IDS = 20 mA | 19 |
| Output leakage current TJ ≤ 85 °C | IL(OFF) | | 0.1 | 0.7 | μA | VIN floating, VOUT = 0 V, TJ ≤ 85 °C | 19 |
| Output leakage current TJ = 150 °C | IL(OFF)_150 | | 2.5 | 25 | μA | VIN floating, VOUT = 0 V, TJ = 150 °C | 19 |
| Slew rate 30% to 70% VS | dV/dtON | 0.1 | 0.25 | 0.5 | V/μs | RL = 2 Ω, VS = 13.5 V | 19 |
| Slew rate 70% to 30% VS | -dV/dtOFF | 0.1 | 0.25 | 0.5 | V/μs | | 19 |
| Turn-ON time to VOUT = 90% VS | tON | 30 | 100 | 250 | μs | | 19 |
| Turn-OFF time to VOUT = 10% VS | tOFF | 30 | 100 | 250 | μs | | 19 |
| Low level input voltage range | VIN(L) | -0.3 | | 0.8 | V | | 37 |
| High level input voltage range | VIN(H) | 2 | | 6 | V | | 37 |
| Low level input current | IIN(L) | 1 | 10 | 25 | μA | VIN = 0.8 V | 37 |
| High level input current | IIN(H) | 2 | 10 | 25 | μA | VIN = 5.5 V | 37 |
| DEN low level input voltage range | VDEN(L) | -0.3 | | 0.8 | V | | 37 |
| DEN high level input voltage range | VDEN(H) | 2 | | 6 | V | | 37 |
| DEN low level input current | IDEN(L) | 1 | 10 | 25 | μA | VDEN = 0.8 V | 37 |
| DEN high level input current | IDEN(H) | 2 | 10 | 25 | μA | VDEN = 5.5 V | 37 |
| Junction to soldering point | RthJS | | 5 | | K/W | Not subject to production test, specified by design | 12 |
| Junction to ambient | RthJA | | 30 | | K/W | JEDEC JESD51-2,-5,-7, natural convection, FR4 2s2p board | 12 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | Cu, 2 x 35 μm Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper | 12 |
## CAD (KiCad official)
- Symbol: `BTS5016-1EKB`
- Footprint: `Package_SO:SOIC-14_3.9x8.7mm_P1.27mm`
- 3D model: SOIC-14 (KiCad packages3D, STEP)
- 3D model files: `bts5016-1ekb-etched.step` / `bts5016-1ekb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bts5016-1ekb.step` / `bts5016-1ekb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8570567093571813376) (53 pp, sha256 `2612c1d301a94b7a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bts5016-1ekb-datasheet.pdf)