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BTS3205N

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Infineon Technologies Power Distribution Switches, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTS3205N

Infineon Technologies · Power Distribution Switches · SOT-223-4

BTS3205N from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN input Input and fault feedback pin: the input voltage is rated from -0.2 V to 10 V, and during a fault the device sinks an increased input current (IINlim) to report the fault to the driver.
2 Drain passive Load connection to the internal N-channel power MOSFET drain; drain voltage is limited to 42 V (active clamped) and drain current is internally limited to 600 mA at Tj = 25 °C.
3 Source power_in Ground connection and reference for all voltages on the device; the source-to-ground path is assumed to have negligible impedance.
4 Drain passive Second load connection pin tied to the same drain node as pin 2 and the drain tab; it carries the same 42 V clamped drain voltage and 600 mA internally limited drain current ratings.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-4
Category Power Management (PMIC)
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain voltage VD 42 V VIN = 0 V, ID = 10 mA 7
Input Voltage VIN -0.2 10 V 7
Input Current -2 2 mA VIN < -0.2 V or VIN > 10 V 7
Drain Current ID 600 mA Tj = 25 °C 7
Unclamped single pulse inductive energy EAS 0 65 mJ ID = 350 mA; Vbb = 28 V; TJ(start) = 85 °C 7
Unclamped single pulse inductive energy 30 mJ ID = 250 mA; Vbb = 28 V; TJ(start) = 150 °C 7
Unclamped repetitive pulse inductive energy, 1×10⁴ cycles EAR 0 18 mJ ID = 200 mA; Vbb = 13.5 V; TJ(start) = 105 °C 7
Unclamped repetitive pulse inductive energy, 1×10⁶ cycles 13 mJ ID = 170 mA; Vbb = 13.5 V; TJ(start) = 105 °C 7
Total Power Dissipation Ptot 0.78 W Ta = 85 °C 7
Operating temperature TJ -40 150 °C 7
Storage temperature Tstg -55 150 °C 7
Electrostatic discharge voltage (HBM) VESD -2 2 kV IN Pin; R = 1.5 k; C = 100 pF; TJ = 25 °C 7
Junction to Soldering Point RthJC 42 K/W 8
Nominal Input current IINnom 10 30 μA VD = 0 V; VIN = 10 V 13
Input current protection mode IINlim 100 150 μA VIN = 10 V; TJ = 150 °C 13
Input threshold voltage VINTH 1.3 1.7 2.2 V VD = VIN; ID = 50 μA; TJ = 25°C 13
Input threshold voltage 0.8 V VD = VIN; ID = 50 μA, 150 °C 13
On-State Resistance RDS(on) 1.8 2.4 Ω TJ = 150 °C; VIN = 5 V; ID = 200mA 13
Nominal load current IDnom 350 520 mA TJ < 150 °C; TA = 105 °C; VIN = 5 V 13
Zero input voltage drain current IDSS 5 μA VDS = 13.5 V; VIN = 0 V; TJ = 150 °C 13
Zero input voltage drain current IDSS 2.5 6 μA VDS = 32 V; VIN = 0 V; TJ = -40 °C to 85 °C 13
Zero input voltage drain current IDSS 47 μA VDS = 32 V; VIN = 0 V; TJ = 150 °C 13
On-State Resistance RDS(on) 1.4 1.9 Ω TJ = 150 °C; VIN = 10 V; ID = 200mA 13
Turn-on time ton 16 38 μs Vbb = 12 V, RL = 82 Ω; VIN = 10 V to 90% ID 14
Turn-off time toff 15 45 μs Vbb = 12 V, RL = 82 Ω; VIN = 0 V to 10% ID 14
Slew rate on dVds/dton 2.5 9.3 V/μs 50% - 30% Vbb; RL = 82 Ω; VIN = 0 V to 10 V; Vbb = 12 V 14
Slew rate off dVds/dtoff 6 18.2 V/μs 30% - 50% Vbb; RL = 82 Ω; VIN = 10 V to 0 V; Vbb = 12 V 14
Inverse Diode forward voltage VD -1 -1.5 V ID = -1 A; VIN = 0 V 14
Drain clamp voltage VClamp 42 55 V VIN = 0 V; ID = 10 mA; 18
Current limitation Ilim 0.6 0.9 1.2 A VIN = 10 V; VDS = 12 V; tmeasure = 4 × tdlim; TJ = 25 °C 18
Current limitation Ilim 0.3 A TJ = 150 °C 18
Current limitation Ilim 1.4 A TJ = -40 °C 18
Current limitation delay time tdlim 50 μs 18
Junction to Ambient RthJA 63 K/W 8
Thermal hysteresis ΔTJSD 10 K 18
On-State Resistance RDS(on) 0.9 Ω TJ = 25 °C; VIN = 5 V; ID = 200mA 13
On-State Resistance RDS(on) 0.7 Ω TJ = 25 °C; VIN = 10 V; ID = 200mA 13

CAD (KiCad official)

  • Symbol: BTS3205N
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: bts3205n-etched.step / bts3205n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bts3205n.step / bts3205n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (21 pp, sha256 5505d3edaf7a3082, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF