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BTN8982TA

Infineon Technologies · Gate Drivers · TO-263-7

BTN8982TA from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference for logic and power; the datasheet asks that the offset between this pin and the GND of the slew-rate and current-sense resistors be minimized.
2 IN input Logic input that selects whether the high-side or low-side switch is activated, with absolute maximum input voltage of -0.3 V to 5.3 V and a series resistor greater than 7 kΩ recommended for protection.
3 INH input Inhibit input where a high level enables the device and a low level puts it into sleep mode with both switches off, and a low pulse of at least 4 µs resets the overtemperature latch; absolute maximum input voltage is -0.3 V to 5.3 V.
4 OUT output Power output of the half bridge, with continuous drain current limited to -50 A to 50 A at TC < 85 °C.
5 SR input Slew-rate adjustment pin where an external resistor to GND sets the switching speed of the power MOSFETs, with absolute maximum voltage of -0.3 V to 1.0 V.
6 IS output Combined current sense and error flag output that sources a current proportional to the high-side load current in normal operation and a fixed fault current IIS(lim) of 4 to 6.5 mA during overtemperature or overcurrent, with absolute maximum voltage of -20 V to 40 V.
7 VS power_in Supply voltage pin, specified for normal operation from 8 V to 18 V and extended operation from 5.5 V to 40 V, with absolute maximum of -0.3 V to 40 V.
8 OUT output Power output of the half bridge (same net as pin 4), with continuous drain current limited to -50 A to 50 A at TC < 85 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-7
Category Motor Driver ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VS -0.3 40 V 6
Drain-Source Voltage High Side VDS(HS) -40 V Tj >= 25 C 6
Drain-Source Voltage High Side VDS(HS) -38 V Tj < 25 C 6
Drain-Source Voltage Low Side VDS(LS) 40 V Tj >= 25 C 6
Drain-Source Voltage Low Side VDS(LS) 38 V Tj < 25 C 6
Logic Input Voltage VIN, VINH -0.3 5.3 V 6
Voltage at SR Pin VSR -0.3 1 V 6
Voltage between VS and IS Pin VS -VIS -0.3 40 V 6
Voltage at IS Pin VIS -20 40 V 6
HS/LS Continuous Drain Current ID(HS), ID(LS) -50 50 A TC < 85 C; switch active 6
HS/LS Continuous Drain Current ID(HS), ID(LS) -44 44 A TC < 125 C; switch active 6
HS/LS Pulsed Drain Current ID(HS), ID(LS) -117 117 A tpulse = 10 ms; single pulse; TC < 85 C 6
HS/LS Pulsed Drain Current ID(HS), ID(LS) -104 104 A tpulse = 10 ms; single pulse; TC < 125 C 6
HS/LS PWM Current ID(HS), ID(LS) -68 68 A f = 1 kHz; DC = 50%; TC < 85 C 6
HS/LS PWM Current ID(HS), ID(LS) -60 60 A f = 1 kHz; DC = 50%; TC < 125 C 6
HS/LS PWM Current ID(HS), ID(LS) -70 70 A f = 20 kHz; DC = 50%; TC < 85 C 6
HS/LS PWM Current ID(HS), ID(LS) -62 62 A f = 20 kHz; DC = 50%; TC < 125 C 6
Junction Temperature Tj -40 150 C 6
Storage Temperature Tstg -55 150 C 6
ESD Resistivity HBM (IN, INH, SR, IS) VESD -2 2 kV HBM (ANSI/ESDA/JEDEC JS-001, 1.5 kOhm, 100 pF) 6
ESD Resistivity HBM (OUT, GND, VS) VESD -6 6 kV HBM (ANSI/ESDA/JEDEC JS-001, 1.5 kOhm, 100 pF) 6
Supply Voltage Range for Normal Operation VS(nor) 8 18 V 7
Extended Supply Voltage Range for Operation VS(ext) 5.5 40 V Parameter deviations possible 7
Junction Temperature (functional range) Tj -40 150 C 7
Thermal Resistance Junction-Case, High Side Switch RthJC(HS) 0.55 0.8 K/W 8
Thermal Resistance Junction-Case, Low Side Switch RthJC(LS) 1.1 1.6 K/W 8
Supply Current IVS(on) 2.2 3.3 mA VINH = 5 V; VIN = 0 V or 5 V; RSR = 0 Ohm; DC-mode normal operation (no fault condition) 9
Quiescent Current IVS(off) 7 13 uA VINH = 0 V; VIN = 0 V or 5 V; Tj < 85 C 9
Quiescent Current IVS(off) 75 uA VINH = 0 V; VIN = 0 V or 5 V 9
ON State High Side Resistance RON(HS) 5.3 8 mOhm IOUT = 9 A; VS = 13.5 V; Tj = 25 C 11
ON State High Side Resistance RON(HS) 10.5 mOhm IOUT = 9 A; VS = 13.5 V; Tj = 150 C 11
ON State High Side Resistance RON(HS) 7.5 10 mOhm IOUT = 6 A; VS = 6 V; Tj = 25 C 11
ON State High Side Resistance RON(HS) 15.2 mOhm IOUT = 6 A; VS = 6 V; Tj = 150 C 11
Leakage Current High Side IL(LKHS) 2 uA VINH = 0 V; VOUT = 0 V; Tj < 85 C 11
Leakage Current High Side IL(LKHS) 60 uA VINH = 0 V; VOUT = 0 V; Tj = 150 C 11
ON State Low Side Resistance RON(LS) 4.7 7.5 mOhm IOUT = -9 A; VS = 13.5 V; Tj = 25 C 11
ON State Low Side Resistance RON(LS) 9.9 mOhm IOUT = -9 A; VS = 13.5 V; Tj = 150 C 11
ON State Low Side Resistance RON(LS) 6 9.5 mOhm IOUT = -6 A; VS = 6 V; Tj = 25 C 11
ON State Low Side Resistance RON(LS) 13.5 mOhm IOUT = -6 A; VS = 6 V; Tj = 150 C 11
Leakage Current Low Side IL(LKLS) 2 uA VINH = 0 V; VOUT = VS; Tj < 85 C 11
Leakage Current Low Side IL(LKLS) 30 uA VINH = 0 V; VOUT = VS; Tj = 150 C 11
Switch-ON Voltage VUV(ON) 5.5 V VS increasing 16
Switch-OFF Voltage VUV(OFF) 3 4.5 V VS decreasing; INH = 1 16
Current Limitation Detection level High Side ICLH0 55 77 98 A VS = 13.5 V 16
Current Limitation Detection level Low Side ICLL0 55 77 98 A VS = 13.5 V 16
Shut OFF Time for HS and LS tCLS 70 115 210 us VS = 13.5 V 16
Thermal Shut Down Junction Temperature TjSD 155 175 200 C 16
Thermal Switch ON Junction Temperature TjSO 150 190 C 16
Reset Pulse at INH Pin (INH low) treset 4 us 16
High level Voltage INH VINH(H) 1.75 2.15 V 20
High level Voltage IN VIN(H) 1.6 2 V 20
Low level Voltage INH, IN VINH(L), VIN(L) 1.1 1.4 V 20
Input Current high level IINH(H), IIN(H) 10 30 150 uA VIN = VINH = 5.3 V 20
Input Current low level IINH(L), IIN(L) 10 25 125 uA VIN = VINH = 0.4 V 20
Differential Current Sense ratio in static on-condition dkILIS 14 19.5 25 103 RIS = 1 kOhm; IL1 = 10 A; IL2 = 40 A 20
Maximum analog Sense Current, Sense Current in fault Condition IIS(lim) 4 5 6.5 mA VS = 13.5 V; RIS = 1 kOhm 20
Isense Leakage current IISL 1 uA VINH = 0 V 20
Isense offset current IIS(offset) 30 170 385 uA VS = 18 V; VINH = 5 V; ISD(HS) = 0 A 20
Thermal Resistance Junction-Ambient RthJA 19 K/W JEDEC JESD51-2,-5,-7; natural convection; FR4 2s2p board 8

CAD (KiCad official)

  • Symbol: BTN8982TA
  • Footprint: Package_TO_SOT_SMD:TO-263-7_TabPin8
  • 3D model: TO-263-7 (KiCad packages3D, STEP)
  • 3D model files: btn8982ta-etched.step / btn8982ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btn8982ta.step / btn8982ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (26 pp, sha256 3d4201dd32f3149e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF