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BTB41-600BRG

Public Made by Adom

by adom

JSMSEMI TRIACs, TO-3P-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BTB41-600BRG

JSMSEMI · TRIACs · TO-3P-3

BTB41-600BRG from JSMSEMI, in a TO-3P-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Main terminal A1 (reference terminal for gate and A2 polarity); the datasheet's TOP3 (BTB41) drawing shows the leads in the order A1, A2, G.
2 A2 passive Main terminal A2, which is also connected to the metal tab (non-insulated TOP3, BTB41); rated 40 A RMS (IT(RMS)) and VDRM/VRRM of 600 V for this part.
3 G input Gate trigger input with IGT max 50 mA in quadrants I-II-III (100 mA in IV) and VGT max 1.3 V at VD = 12 V, RL = 33 Ω.

Key specifications

Parameter Value
Manufacturer JSMSEMI
Package TO-3P-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current (quadrants I-II-III) IGT 50 mA VD = 12 V RL = 33 Ω, I - II - III 2
Gate trigger current (quadrant IV) IGT 100 mA VD = 12 V RL = 33 Ω, IV 2
Gate trigger voltage VGT 1.3 V VD = 12 V RL = 33 Ω, ALL 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125°C, ALL 2
Holding current IH 80 mA IT = 500 mA 2
Latching current (I - III - IV) IL 70 mA IG = 1.2 IGT, I - III - IV 2
Latching current (II) IL 160 mA IG = 1.2 IGT, II 2
Critical rate of rise of off-state voltage dV/dt 500 V/µs VD = 67 %VDRM gate open Tj = 125°C 2
Critical rate of decrease of commutating current (dV/dt)c 10 V/µs (dI/dt)c = 20 A/ms Tj = 125°C 2
On-state voltage VT 1.55 V ITM = 60 A tp = 380 µs Tj = 25°C 2
Threshold voltage Vt0 0.85 V Tj = 125°C 2
Dynamic resistance Rd 10 mΩ Tj = 125°C 2
Off-state/reverse leakage current IDRM/IRRM 5 µA VDRM = VRRM, Tj = 25°C 2
Off-state/reverse leakage current IDRM/IRRM 5 mA VDRM = VRRM, Tj = 125°C 2
RMS on-state current IT(RMS) 40 A full sine wave, TOP3 Tc = 95°C 2
Non repetitive surge peak on-state current ITSM 400 A F = 50 Hz t = 20 ms, Tj initial = 25°C 2
Non repetitive surge peak on-state current ITSM 420 A F = 60 Hz t = 16.7 ms, Tj initial = 25°C 2
I²t value for fusing I²t 880 A²s tp = 10 ms 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns F = 120 Hz Tj = 125°C 2
Non repetitive surge peak off-state voltage VDSM/VRSM 100 V tp = 10 ms Tj = 25°C; VDSM/VRSM + 100 V 2
Peak gate current IGM 8 A tp = 20 µs Tj = 125°C 2
Average gate power dissipation PG(AV) 1 W Tj = 125°C 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case thermal resistance (AC) Rth(j-c) 0.9 °C/W TOP3 3
Junction to ambient thermal resistance Rth(j-a) 50 °C/W TOP3 / TOP3 Insulated 3
Repetitive peak off-state/reverse voltage VDRM/VRRM 600 V BTB41-600BRG 1

CAD (KiCad official)

  • Symbol: BTB41-600BRG
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P-3 (KiCad packages3D, STEP)
  • 3D model files: btb41-600brg-etched.step / btb41-600brg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb41-600brg.step / btb41-600brg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: JSMSEMI datasheet (6 pp, sha256 42bdde57c186bd0b, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF