component
BTB26-800CW
Public Made by Adomby adom
WEIDA Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BTB26-800CW
WEIDA · Thyristors (SCR)/Modules · TO-263
BTB26-800CW from WEIDA, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac (pin 1); current path to T2, with 25 A RMS on-state current rating (IT(RMS)). |
| 2 | T2 | passive | Main terminal T2 of the triac (pin 2, shown on the TO-263 drawing at the mounting tab); blocks VDRM/VRRM of 800 V for the -800 version. |
| 3 | G | input | Gate trigger terminal (pin 3); IGT max 35 mA for the CW grade at VD=12V, RL=33Ω, and VGT max 1.3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage (800V variant) | VDRM | 800 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage (800V variant) | VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 25 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 250 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 340 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 2 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 2 | |||
| Peak gate power | PGM | 10 | W | 2 | |||
| Gate trigger current (3 quadrant, CW) | IGT | 35 | mA | VD=12V, RL=33Ω, Quadrant Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Gate non-trigger voltage (3 quadrant) | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, Quadrant Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Holding current (CW) | IH | 60 | mA | IT=100mA | 2 | ||
| Latching current Quadrant Ⅰ-Ⅲ (CW) | IL | 70 | mA | IG=1.2IGT, Quadrant Ⅰ-Ⅲ | 2 | ||
| Latching current Quadrant Ⅱ (CW) | IL | 80 | mA | IG=1.2IGT, Quadrant Ⅱ | 2 | ||
| Critical rate of rise of off-state voltage (CW) | dV/dt | 1000 | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=35A, tp=380μs, Tj=25℃ | 3 | ||
| Repetitive peak off-state current | IDRM/IRRM | 10 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak off-state current | IDRM/IRRM | 3 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Thermal resistance junction to case (AC), TO-263 | Rth(j-c) | 2.1 | ℃/W | junction to case (AC) | 3 |
CAD (KiCad official)
- Symbol:
BTB26-800CW - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
btb26-800cw-etched.step/btb26-800cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb26-800cw.step/btb26-800cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (8 pp, sha256
0ef156b4231c6c26, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).