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BTB12-800SW
Public Made by Adomby adom
KY Thyristors (SCR)/Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBTB12-800SW
KY · Thyristors (SCR)/Modules · TO-263
BTB12-800SW from KY, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac, shown as T1(1) in the symbol on the datasheet. |
| 2 | T2 | passive | Main terminal T2 of the triac, shown as T2(2) in the symbol and connected to the metal tab; in the TO-263 drawing the center lead is shortened and the tab is marked 2. |
| 3 | G | input | Gate trigger terminal, shown as G(3) in the symbol, with VGT ≤1.3V at VD=12V, RL=30Ω. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger voltage | VGT | 1.3 | V | VD=12V ,RL=30Ω | 3 | ||
| Gate trigger current, quadrants I,II,III | IGT | 10 | mA | VD=12V RL=30Ω | 3 | ||
| Holding current | IH | 25 | mA | IT=0.2A | 3 | ||
| Repetitive Peak Off-State Current | IDRM | 5 | uA | Tj=25°C | 3 | ||
| Repetitive Peak Off-State Current | IDRM | 1 | mA | Tj=125°C | 3 | ||
| Repetitive Peak Reverse Current | IRRM | 5 | uA | Tj=25°C | 3 | ||
| Repetitive Peak Reverse Current | IRRM | 1 | mA | Tj=125°C | 3 | ||
| Critical rate of rise of on-state current, quadrants I,II,III | di/dt | 50 | A/us | F=100Hz, IG=2xIGT, tr ≤100ns | 3 | ||
| Critical rate of rise of on-state current, quadrant IV | di/dt | 10 | A/us | 3 | |||
| Critical rate of rise of commutation voltage | dv/dt | 100 | V/us | TJ=125°C VD=2/3VDRM Gate open circuit | 3 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | ALL VD=VDRM TJ=125°C,RL=3.3KΩ | 3 | ||
| Repetitive Peak Off-State Voltage (BTA12/BTB12-800) | VDRM/VRRM | 800 | V | 3 | |||
| R.M.S On-State Current | IT(RMS) | 12 | A | Tc=110°C | 3 | ||
| Surge On-State Current | ITSM | 120 | A | tp=16.7ms/tp=10ms | 3 | ||
| I²t for fusing | I²t | 78 | A²s | Tp=10ms | 3 | ||
| Average Gate Power Dissipation | PG(AV) | 1 | W | Tj=125°C | 3 | ||
| Peak Gate Current | IGM | 4 | A | tp=20us Tj=125°C | 3 | ||
| Operating Junction Temperature | Tj | -40 | 125 | °C | 3 | ||
| Storage Temperature | TSTG | -40 | 150 | °C | 3 | ||
| Thermal resistance Junction to case | Rth(j-c) | 3.3 | °C/W | 3 | |||
| Thermal resistance Junction to ambient | Rth(j-a) | 60 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
BTB12-800SW - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
btb12-800sw-etched.step/btb12-800sw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb12-800sw.step/btb12-800sw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KY datasheet (7 pp, sha256
40ae5c54db09f517, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).