# BTB12-800CW

**WEIDA** · TRIACs · TO-263

BTB12-800CW from WEIDA, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac (T1(1) in the symbol), the reference terminal for gate triggering; the device is rated for IT(RMS) 12 A. |
| 2 | T2 | passive | Main terminal 2 of the triac (T2(2) in the symbol), marked on the TO-263 drawing at the tab; blocks VDRM/VRRM of 600/800/1200 V depending on the variant. |
| 3 | G | input | Gate terminal (G(3) in the symbol); trigger current IGT is a maximum of 35 mA for the CW grade (VD=12V, RL=33Ω) and VGT is a maximum of 1.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-263 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT |  |  | 35 | mA | VD=12V, RL=33Ω, quadrants I-II-III, CW | 2 |
| Gate trigger voltage | VGT |  |  | 1.5 | V | VD=12V, RL=33Ω, quadrants I-II-III | 2 |
| Gate non-trigger voltage | VGD | 0.2 |  |  | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, quadrants I-II-III | 2 |
| Holding current | IH |  |  | 40 | mA | IT=100mA, CW | 2 |
| Latching current, quadrants I-III | IL |  |  | 50 | mA | IG=1.2IGT, quadrants I-III, CW | 2 |
| Latching current, quadrant II | IL |  |  | 60 | mA | IG=1.2IGT, quadrant II, CW | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 500 |  |  | V/µs | VD=2/3VDRM, Tj=125℃, gate open, CW | 2 |
| On-state voltage | VTM |  |  | 1.5 | V | ITM=17A, tp=380μs, Tj=25℃ | 3 |
| Off-state/reverse leakage current | IDRM/IRRM |  |  | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 |
| Off-state/reverse leakage current | IDRM/IRRM |  |  | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 |
| Thermal resistance junction to case (AC) | Rth(j-c) |  |  | 1.5 | ℃/W | TO-263 | 3 |
| Repetitive peak off-state voltage | VDRM |  |  | 800 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage | VRRM |  |  | 800 | V | Tj=25℃ | 1 |
| RMS on-state current | IT(RMS) |  |  | 12 | A |  | 1 |
| Non repetitive surge peak on-state current | ITSM |  |  | 120 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I2t |  |  | 78 | A2s | tp=10ms | 1 |
| Critical rate of rise of on-state current | dI/dt |  |  | 50 | A/μs | IG=2×IGT | 1 |
| Peak gate current | IGM |  |  | 4 | A |  | 1 |
| Average gate power dissipation | PG(AV) |  |  | 1 | W |  | 1 |
| Peak gate power | PGM |  |  | 5 | W |  | 1 |
| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |
| Operating junction temperature range | Tj | -40 |  | 125 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `BTB12-800CW`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `btb12-800cw-etched.step` / `btb12-800cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb12-800cw.step` / `btb12-800cw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WEIDA datasheet](docs/btb12-800cw-datasheet.pdf) (7 pp, sha256 `464a37ab52cf58d7`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/btb12-800cw-datasheet.pdf)