component
BTB10-800CW
Public Made by Adomby adom
WEIDA TRIACs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BTB10-800CW
WEIDA · TRIACs · TO-220
BTB10-800CW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac (T1(1)); the 10 A RMS on-state current (IT(RMS)) flows between T1 and T2. |
| 2 | T2 | passive | Main terminal T2 of the triac (T2(2)); the non-insulated TO-220B tab is not isolated, and the datasheet rates VDRM/VRRM at 600/800 V. |
| 3 | G | input | Gate (G(3)) trigger input; the CW grade has IGT of 35 mA max in quadrants I-II-III at VD=12 V and VGT of 1.5 V max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current (3-quadrant, CW column) | IGT | 35 | mA | VD=12V, RL=33Ω; Quadrants Ⅰ-Ⅱ-Ⅲ | 2 | ||
| Holding current (CW column) | IH | 40 | mA | IT=100mA | 2 | ||
| Latching current, Quadrants Ⅰ-Ⅲ (CW column) | IL | 50 | mA | IG=1.2IGT; Quadrants Ⅰ-Ⅲ | 2 | ||
| Latching current, Quadrant Ⅱ (CW column) | IL | 70 | mA | IG=1.2IGT; Quadrant Ⅱ | 2 | ||
| Critical rate of rise of off-state voltage (CW column) | dV/dt | 500 | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM, Tj=125℃, RL=3.3kΩ; all quadrants | 2 | ||
| On-state voltage | VTM | 1.5 | V | ITM=14A, tp=380μs, Tj=25℃ | 3 | ||
| Repetitive peak off-state current | IDRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak reverse current | IRRM | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 | ||
| Repetitive peak off-state current | IDRM | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Repetitive peak reverse current | IRRM | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 | ||
| Gate trigger voltage | VGT | 1.5 | V | 2 | |||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage (800 V variant) | VDRM | 800 | V | Tj=25℃ | 1 | ||
| Repetitive peak reverse voltage (800 V variant) | VRRM | 800 | V | Tj=25℃ | 1 | ||
| RMS on-state current | IT(RMS) | 10 | A | 1 | |||
| Non repetitive surge peak on-state current | ITSM | 100 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I²t | 55 | A²s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT | 1 | ||
| Peak gate current | IGM | 4 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 1 | W | 1 | |||
| Peak gate power | PGM | 5 | W | 1 | |||
| Thermal resistance junction to case (AC), TO-220B (Non-Ins) | Rth(j-c) | 1.6 | ℃/W | junction to case (AC), TO-220B (Non-Ins) | 3 |
CAD (KiCad official)
- Symbol:
BTB10-800CW - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
btb10-800cw-etched.step/btb10-800cw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);btb10-800cw.step/btb10-800cw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: WEIDA datasheet (7 pp, sha256
bc78b4730d429642, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BTB10-800CW
**WEIDA** · TRIACs · TO-220
BTB10-800CW from WEIDA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 of the triac (T1(1)); the 10 A RMS on-state current (IT(RMS)) flows between T1 and T2. |
| 2 | T2 | passive | Main terminal T2 of the triac (T2(2)); the non-insulated TO-220B tab is not isolated, and the datasheet rates VDRM/VRRM at 600/800 V. |
| 3 | G | input | Gate (G(3)) trigger input; the CW grade has IGT of 35 mA max in quadrants I-II-III at VD=12 V and VGT of 1.5 V max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current (3-quadrant, CW column) | IGT | | | 35 | mA | VD=12V, RL=33Ω; Quadrants Ⅰ-Ⅱ-Ⅲ | 2 |
| Holding current (CW column) | IH | | | 40 | mA | IT=100mA | 2 |
| Latching current, Quadrants Ⅰ-Ⅲ (CW column) | IL | | | 50 | mA | IG=1.2IGT; Quadrants Ⅰ-Ⅲ | 2 |
| Latching current, Quadrant Ⅱ (CW column) | IL | | | 70 | mA | IG=1.2IGT; Quadrant Ⅱ | 2 |
| Critical rate of rise of off-state voltage (CW column) | dV/dt | 500 | | | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | VD=VDRM, Tj=125℃, RL=3.3kΩ; all quadrants | 2 |
| On-state voltage | VTM | | | 1.5 | V | ITM=14A, tp=380μs, Tj=25℃ | 3 |
| Repetitive peak off-state current | IDRM | | | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 |
| Repetitive peak reverse current | IRRM | | | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 |
| Repetitive peak off-state current | IDRM | | | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 |
| Repetitive peak reverse current | IRRM | | | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 |
| Gate trigger voltage | VGT | | 1.5 | | V | | 2 |
| Storage junction temperature range | Tstg | -40 | | 150 | ℃ | | 1 |
| Operating junction temperature range | Tj | -40 | | 125 | ℃ | | 1 |
| Repetitive peak off-state voltage (800 V variant) | VDRM | | | 800 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage (800 V variant) | VRRM | | | 800 | V | Tj=25℃ | 1 |
| RMS on-state current | IT(RMS) | | | 10 | A | | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 100 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I²t | | | 55 | A²s | tp=10ms | 1 |
| Critical rate of rise of on-state current | dI/dt | | | 50 | A/μs | IG=2×IGT | 1 |
| Peak gate current | IGM | | | 4 | A | | 1 |
| Average gate power dissipation | PG(AV) | | | 1 | W | | 1 |
| Peak gate power | PGM | | | 5 | W | | 1 |
| Thermal resistance junction to case (AC), TO-220B (Non-Ins) | Rth(j-c) | | 1.6 | | ℃/W | junction to case (AC), TO-220B (Non-Ins) | 3 |
## CAD (KiCad official)
- Symbol: `BTB10-800CW`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `btb10-800cw-etched.step` / `btb10-800cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb10-800cw.step` / `btb10-800cw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [WEIDA datasheet](docs/btb10-800cw-datasheet.pdf) (7 pp, sha256 `bc78b4730d429642`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/btb10-800cw-datasheet.pdf)