# BTB08E-800BW

**KTP** · Thyristors (SCR)/Modules · TO-263

BTB08E-800BW from KTP, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal T1 is the power terminal of the triac, rated for repetitive peak off-state voltage VDRM of 600/800/1200 V and RMS on-state current IT(RMS) of 8 A at TC=90℃. |
| 2 | T2 | passive | Main terminal T2 is the second power terminal of the triac, rated for repetitive peak reverse voltage VRRM of 600/800/1200 V and a non-repetitive surge peak on-state current ITSM of 80 A (full cycle, 50Hz). |
| 3 | G | input | Gate G triggers the triac, with gate trigger current IGT up to 5/10/35/50 mA by quadrant, gate trigger voltage VGT max 1.5 V, peak gate current IGM 4 A and peak gate power PGM 5 W. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KTP |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger voltage (Quadrants I-II-III) | VGT |  |  | 1.5 | V | VD=12V RL=33Ω | 2 |
| Gate non-trigger voltage (Quadrants I-II-III) | VGD | 0.2 |  |  | V | VD=VDRM Tj=125℃ RL=3.3KΩ | 2 |
| On-state voltage | VTM |  |  | 1.5 | V | ITM=11A tp=380μs Tj=25℃ | 2 |
| Repetitive peak off-state current | IDRM |  |  | 5 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 |
| Repetitive peak reverse current | IRRM |  |  | 1 | mA | VD=VDRM VR=VRRM Tj=125℃ | 2 |
| Repetitive peak off-state voltage (Tj=25℃) | VDRM |  |  | 800 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage (Tj=25℃) | VRRM |  |  | 800 | V | Tj=25℃ | 1 |
| RMS on-state current | IT(RMS) |  |  | 8 | A | TC=90℃ | 1 |
| Non repetitive surge peak on-state current | ITSM |  |  | 80 | A | full cycle, F=50Hz | 2 |
| I2t value for fusing | I2t |  |  | 32 | A2s | tp=10ms | 2 |
| Critical rate of rise of on-state current | dI/dt |  |  | 50 | A/μs | IG=2×IGT | 2 |
| Peak gate current | IGM |  |  | 4 | A |  | 2 |
| Average gate power dissipation | PG(AV) |  |  | 1 | W |  | 2 |
| Peak gate power | PGM |  |  | 5 | W |  | 2 |
| Junction to case thermal resistance (AC), TO-263 | Rth(j-c) |  |  | 3 | ℃/W | AC, TO-263 | 2 |
| Operating junction temperature range | Tj | -40 |  | 150 | ℃ |  | 1 |
| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `BTB08E-800BW`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `btb08e-800bw-etched.step` / `btb08e-800bw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb08e-800bw.step` / `btb08e-800bw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KTP datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604432046735302656) (4 pp, sha256 `5c800519ef2efd75`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/btb08e-800bw-datasheet.pdf)