# BTB08-600CW

**WEIDA** · Thyristors (SCR)/Modules · TO-252

BTB08-600CW from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 of the triac, the reference terminal for gate triggering; the device is rated 8 A IT(RMS) and 600 V VDRM/VRRM (600 V variant). |
| 2 | T2 | passive | Main terminal 2 of the triac; the device is rated 8 A IT(RMS) and 600 V VDRM/VRRM (600 V variant). |
| 3 | G | input | Gate trigger input; for the CW grade IGT is max 35 mA in quadrants I-II-III at VD=12 V, RL=33 Ω, with VGT max 1.5 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WEIDA |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, quadrants I-II-III (CW, IGT1-3 ≤35mA) | IGT |  |  | 35 | mA | VD=12V, RL=33Ω, Quadrant Ⅰ-Ⅱ-Ⅲ | 2 |
| Gate non-trigger voltage (CW) | VGD | 0.2 |  |  | V | VD=VDRM, Tj=125℃, RL=3.3kΩ, quadrant Ⅰ-Ⅱ-Ⅲ | 2 |
| Holding current (CW) | IH |  |  | 40 | mA | IT=100mA | 2 |
| Latching current, quadrant Ⅰ-Ⅲ (CW) | IL |  |  | 50 | mA | IG=1.2IGT, quadrant Ⅰ-Ⅲ | 2 |
| Latching current, quadrant Ⅱ (CW) | IL |  |  | 70 | mA | IG=1.2IGT, quadrant Ⅱ | 2 |
| Critical rate of rise of off-state voltage (CW) | dV/dt | 500 |  |  | V/µs | VD=2/3VDRM, Tj=125℃, gate open | 2 |
| On-state voltage | VTM |  |  | 1.5 | V | ITM=11A, tp=380μs, Tj=25℃ | 3 |
| Repetitive peak off-state current | IDRM/IRRM |  |  | 5 | µA | VDRM=VRRM, Tj=25℃ | 3 |
| Repetitive peak off-state current | IDRM/IRRM |  |  | 1 | mA | VDRM=VRRM, Tj=125℃ | 3 |
| Repetitive peak off-state voltage (600V variant) | VDRM |  |  | 600 | V | Tj=25℃ | 1 |
| Repetitive peak reverse voltage (600V variant) | VRRM |  |  | 600 | V | Tj=25℃ | 1 |
| Storage junction temperature range | Tstg | -40 |  | 150 | ℃ |  | 1 |
| Operating junction temperature range | Tj | -40 |  | 125 | ℃ |  | 1 |
| RMS on-state current | IT(RMS) |  |  | 8 | A |  | 1 |
| Non repetitive surge peak on-state current | ITSM |  |  | 80 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I2t |  |  | 32 | A2s | tp=10ms | 2 |
| Critical rate of rise of on-state current | dI/dt |  |  | 50 | A/μs | IG=2×IGT | 2 |
| Peak gate current | IGM |  |  | 4 | A |  | 2 |
| Average gate power dissipation | PG(AV) |  |  | 1 | W |  | 2 |
| Peak gate power | PGM |  |  | 5 | W |  | 2 |
| Thermal resistance junction to case (AC), TO-251-4R/TO-252-4R | Rth(j-c) |  | 2 |  | ℃/W | junction to case (AC) | 3 |

## CAD (KiCad official)

- Symbol: `BTB08-600CW`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `btb08-600cw-etched.step` / `btb08-600cw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `btb08-600cw.step` / `btb08-600cw.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WEIDA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944236931141632) (8 pp, sha256 `f2257bbc69abb4ac`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/btb08-600cw-datasheet.pdf)