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Contents

README

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BTB08-600BW

WEIDA · TRIACs · TO-252

BTB08-600BW from WEIDA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal T1 of the triac (symbol shows T1(1)); the datasheet gives IT(RMS) 8 A, VDRM/VRRM 600/800 V and ITSM 80 A for the device.
2 T2 passive Main terminal T2 of the triac (symbol shows T2(2)); this is also the tab pin, and the datasheet gives IT(RMS) 8 A, VDRM/VRRM 600/800 V and Rth(j-c) 2.0 °C/W for TO-252-4R.
3 G input Gate trigger input (symbol shows G(3)); the BW grade has IGT max 50 mA for quadrants I-II-III and VGT max 1.5 V at VD=12 V, RL=33 Ω.

Key specifications

Parameter Value
Manufacturer WEIDA
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 600 V Tj=25℃ 1
Repetitive peak reverse voltage VRRM 600 V Tj=25℃ 1
RMS on-state current IT(RMS) 8 A 1
Non repetitive surge peak on-state current ITSM 80 A full cycle, F=50Hz 1
I2t value for fusing I2t 32 A2s tp=10ms 2
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT 2
Peak gate current IGM 4 A 2
Average gate power dissipation PG(AV) 1 W 2
Peak gate power PGM 5 W 2
Gate trigger current (BW, quadrants I-II-III) IGT 50 mA VD=12V, RL=33Ω 2
Gate trigger voltage VGT 1.5 V 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM, Tj=125℃, RL=3.3kΩ 2
Holding current (BW) IH 60 mA IT=100mA 2
Latching current (BW, quadrants I and III) IL 70 mA IG=1.2IGT 2
Latching current (BW, quadrant II) IL 90 mA IG=1.2IGT 2
Critical rate of rise of off-state voltage (BW) dV/dt 1000 V/µs VD=2/3VDRM, Tj=125℃, gate open 2
On-state voltage VTM 1.5 V ITM=11A, tp=380μs, Tj=25℃ 3
Repetitive peak off-state current IDRM/IRRM 5 µA VDRM=VRRM, Tj=25℃ 3
Repetitive peak off-state current IDRM/IRRM 1 mA Tj=125℃ 3
Thermal resistance junction to case (AC), TO-252-4R Rth(j-c) 2 ℃/W junction to case (AC), TO-251-4R/TO-252-4R 3

CAD (KiCad official)

  • Symbol: BTB08-600BW
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: btb08-600bw-etched.step / btb08-600bw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); btb08-600bw.step / btb08-600bw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WEIDA datasheet (8 pp, sha256 f2257bbc69abb4ac, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF